IPT60R102G7XTMA1

IPT60R102G7 MOSFET 600VCoolMOSªG7SJPowerDevice HSOF TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand theimprovedthermalpropertiesoftheTOLLpackagetoenableapossible SMDsolutionforhighcurrenttopologiessuchasPFCupto3kW Tab Tab 1 Features •C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg. •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint. •TOLLpackagehasinbuilt4thpinKelvinSourceconfigurationandlow parasiticsourceinductance(~1nH). •TOLLpackageisMSL1compliant,totalPb-freeandhaseasyvisual inspectiongroovedleads. •TOLLSMDpackagecombinedwithleadfreedieattachprocessenables improvedthermalperformanceRth. 2 3 45 8 6 7 8 7 6 5 4 3 2 1 Drain Tab *1 Gate Pin 1 Driver Source Pin 2 Benefits •C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling fasterswitchingleadingtohigherefficiency. •IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •C7Goldcanreach28mΩininTOLL115mm2footprint,whereasprevious BICC7600Vwas40mΩin150mm2D2PAKfootprint. •ReducingparasiticsourceinductancebyKelvinSourceimproves efficiencybyfasterswitchingandeaseofuseduetolessringing. •TOLLpackageiseasytouseandhasthehighestqualitystandards. •ImprovedthermalsenableSMDTOLLpackagetobeusedinhigher currentdesignsthanhasbeenpreviouslypossible. Source Pin 3-8 *1: Internal body diode Potentialapplications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 102 mΩ Qg.typ 34 nC ID,pulse 66 A ID,continuous @ Tj1 Hz) Power dissipation Ptot - - 141 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - n.a. Ncm - IS - - 23 A TC=25°C Diode pulse current IS,pulse - - 66 A TC=25°C Reverse diode dv/dt3) dv/dt - - 25 V/ns VDS=0...400V,ISD