IPT65R033G7XTMA1

IPT65R033G7 MOSFET 650VCoolMOSªC7Goldseries(G7)SJPowerDevice HSOF TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand theimprovedthermalpropertiesoftheTOLLpackagetoenableapossible SMDsolutionforhighcurrenttopologiessuchasPFCupto3kW Tab Tab 1 Features •C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg. •C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint. •TOLLpackagehasinbuilt4thpinKelvinSourceconfigurationandlow parasiticsourceinductance(~1nH). •TOLLpackageisMSL1compliant,totalPb-freeandhaseasyvisual inspectiongroovedleads. •TOLLSMDpackagecombinedwithleadfreedieattachprocessenables improvedthermalperformanceRth. 2 3 45 8 6 7 8 7 6 5 4 3 2 1 Drain Tab *1 Gate Pin 1 Benefits •C7GoldFOMRDS(on)*Qgis14%betterthanpreviousC7650Venabling fasterswitchingleadingtohigherefficiency. •C7Goldcanreach33mΩininTOLL115mm2footprint,whereasprevious BICC7650Vwas45mΩin150mm2D2PAKfootprint. •ReducingparasiticsourceinductancebyKelvinSourceimproves efficiencybyfasterswitchingandeaseofuseduetolessringing. •TOLLpackageiseasytouseandhasthehighestqualitystandards. •ImprovedthermalsenableSMDTOLLpackagetobeusedinhigher currentdesignsthanhasbeenpreviouslypossible. Driver Source Pin 2 Source Pin 3-8 *1: Internal body diode Potentialapplications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 33 mΩ Qg.typ 110 nC ID,pulse 245 A ID,continuous @ Tj1 Hz) Power dissipation Ptot - - 391 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - n.a. Ncm - IS - - 69 A TC=25°C Diode pulse current IS,pulse - - 245 A TC=25°C Reverse diode dv/dt3) dv/dt - - 1.5 V/ns VDS=0...400V,ISD