IPTA60R180CM8XTMA1

IPTA60R180CM8 MOSFET 600VCoolMOSªCM8PowerTransistor PG-LHSOF-4 TheCoolMOS™8thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™CM8seriesisthesuccessortotheCoolMOS™7. ItcombinesthebenefitsofafastswitchingSJMOSFETwithexcellent easeofuse,e.glowringingtendency,implementedfastbodydiode(CFD) forallproductswithoutstandingrobustnessagainsthardcommutationand excellentESDcapability.Furthermore,extremelylowswitchingand conductionlossesofCM8,makeswitchingapplicationsevenmore efficient. Tab 5 1 2 3 4 Features Drain Pin 5 •Suitableforhardandsoftswitchingtopologiesthankstoan  outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A *1 Gate Pin 1 *2 Benefits *1: Internal body diode *2: Integrated ESD diode Source Pin 3,4 Driver Source Pin 2 •Easeofuseandfastdesign-inthroughlowringingtendencyandusage  acrossPFCandPWMstages •Simplifiedthermalmanagementthankstoouradvanceddieattach  technique •Increasedpowerdensitysolutionsenabledbyusingproductswith  smallerfootprintandhighermanufacturingqualityduestateoftheart  ESDprotection •Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications •Powersuppliesandconverters •PFCstages&LLCresonantconverters •Highefficiencyswitchingapplications •e.g.Server,Telecom,EVCharging,UPS Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 180 mΩ Qg,typ 17 nC ID,pulse 48 A Eoss @ 400V 2.4 µJ Body diode diF/dt 1300 A/µs ESD class (HBM) 2 - Type/OrderingCode Package IPTA60R180CM8 PG-LHSOF-4 Final Data Sheet 1 Marking RelatedLinks 60R180C8 see Appendix A Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 18 11 A TC=25°C TC=100°C - 48 A TC=25°C - - 28 mJ ID=2.7A; VDD=50V; see table 10 EAR - - 0.14 mJ ID=2.7A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 2.7 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 119 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Extended operating junction temperature Tj 150 - 175 °C ≤50 h in the application lifetime Mounting torque - - - - Ncm - IS - - 18 A TC=25°C Diode pulse current IS,pulse - - 48 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD≤18A,Tj=25°C see table 8 Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD≤18A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj,max. Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 3 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition 1.05 K/W - 62 K/W device on PCB, minimal footprint Min. Typ. Max. RthJC - - Thermal resistance, junction - ambient RthJA - - Thermal resistance, junction - ambient RthJA for SMD version - 35 45 K/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow Tsold soldering allowed - - 260 °C reflow MSL1 Final Data Sheet 4 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4.2 4.7 V VDS=VGS,ID=0.14mA - 20.8 1 - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C IGSS - - 1.6 µA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.150 0.331 0.180 - Ω VGS=10V,ID=5.6A,Tj=25°C VGS=10V,ID=5.6A,Tj=150°C Gate resistance RG - 12 - Ω f=1MHz Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.7 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 743 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 11 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 30 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 301 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 17.2 - ns VDD=400V,VGS=13V,ID=2.8A, RG=10.0Ω;seetable9 Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=2.8A, RG=10.0Ω;seetable9 Turn-off delay time td(off) - 88.4 - ns VDD=400V,VGS=13V,ID=2.8A, RG=10.0Ω;seetable9 Fall time tf - 12.8 - ns VDD=400V,VGS=13V,ID=2.8A, RG=10.0Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 5 - nC VDD=400V,ID=2.8A,VGS=0to10V Gate to drain charge Qgd - 6 - nC VDD=400V,ID=2.8A,VGS=0to10V Gate charge total Qg - 17 - nC VDD=400V,ID=2.8A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=2.8A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=2.8A,Tj=25°C 62.0 77 ns VR=400V,IF=2.8A,diF/dt=100A/µs; see table 8 - 0.18 0.27 µC VR=400V,IF=2.8A,diF/dt=100A/µs; see table 8 - 6.0 - A VR=400V,IF=2.8A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 125 1 µs 101 75 100 10 µs 100 µs ID[A] Ptot[W] 100 1 ms 10-1 50 10 ms 0 DC 10-2 25 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 101 10 µs ZthJC[°C/W] ID[A] 100 100 µs 10-1 100 0.5 1 ms 0.2 0.1 0.05 10 ms -2 10 10-3 DC 100 101 102 103 10-1 0.02 0.01 single pulse 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 100 60 50 80 20 V 20 V 40 10 V ID[A] 10 V ID[A] 60 30 8V 40 20 8V 20 7V 10 7V 0 6V 0 5 10 15 0 20 6V 5.5 V 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.650 2.5 5.5 V 6V 0.500 2.0 RDS(on)[normalized] RDS(on)[Ω] 6.5 V 7 V 10 V 20 V 0.350 1.5 1.0 0.200 0 10 20 30 40 50 0.5 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=5.6A;VGS=10V 8 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 80 12 25 °C 10 60 120 V 400 V VGS[V] ID[A] 8 150 °C 40 6 4 20 2 0 0 2 4 6 8 10 0 12 0 5 VGS[V] 10 15 20 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=2.8Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 30 25 101 IF[A] EAS[mJ] 20 100 15 10 125 °C 25 °C 5 10-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=2.7A;VDD=50V 9 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 690 660 103 Ciss C[pF] VBR(DSS)[V] 630 102 600 Coss 101 570 Crss 540 -50 -25 0 25 50 75 100 125 150 100 0 100 200 Tj[°C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 3 Eoss[µJ] 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 6PackageOutlines PACKAGE - GROUP NUMBER: DIMENSIONS A b b1 b2 c D D1 E E1 E2 e N H H1 H2 H3 L L1 L2 L3 PG-LHSOF-4-U01 MILLIMETERS MIN. MAX. 1.40 1.60 0.90 1.10 7.46 7.66 0.42 0.50 0.40 0.60 6.59 6.99 2.30 7.80 8.20 6.66 7.56 2.00 4 7.80 8.20 4.30 2.57 1.65 1.00 0.50 0.51 0.23 0.50 0.90 Figure1OutlinePG-LHSOF-4,dimensionsinmm Final Data Sheet 12 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 7AppendixA Table11RelatedLinks • IFXCoolMOSCM8Webpage:www.infineon.com • IFXCoolMOSCM8applicationnote:www.infineon.com • IFXCoolMOSCM8simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.1,2024-03-21 600VCoolMOSªCM8PowerTransistor IPTA60R180CM8 RevisionHistory IPTA60R180CM8 Revision:2024-03-21,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2024-03-15 Release of final version 2.1 2024-03-21 UpdateofRthJC Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2023InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.1,2024-03-21