IPTC011N08NM5ATMA1

IPTC011N08NM5 MOSFET OptiMOSTM5Power-Transistor,80V PG-HDSOP-16 16 Features 16 9 9 •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 1 8 8 1 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 9-16, Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 1.1 mΩ ID 408 A Qoss 207 nC QG 178 nC Gate Pin 8 Source Pin 1-7 Type/OrderingCode Package IPTC011N08NM5 PG-HDSOP-16 Final Data Sheet 1 Marking RelatedLinks 11N08NM5 - Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 408 295 237 42 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=6V,TC=100°C VGS=10V,TA=25°C,RthJA=40°C/W2) - 1632 A TA=25°C - - 817 mJ ID=150A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 375 3.8 W TC=25°C TA=25°C,RthJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.2 0.4 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area2) - - 40 °C/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=280µA - 0.1 10 1.0 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.0 1.3 1.1 1.7 mΩ VGS=10V,ID=150A VGS=6V,ID=75A Gate resistance1) RG - 1.6 2.4 Ω - Transconductance gfs 120 270 - S |VDS|≥2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Ciss - 13000 17000 pF VGS=0V,VDS=40V,f=1MHz Coss - 2000 2600 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 86 150 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 35 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.6Ω Rise time tr - 31 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.6Ω Turn-off delay time td(off) - 82 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.6Ω Fall time tf - 30 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Max. Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 55 - nC VDD=40V,ID=100A,VGS=0to10V Qg(th) - 37 - nC VDD=40V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 37 56 nC VDD=40V,ID=100A,VGS=0to10V Switching charge Qsw - 55 - nC VDD=40V,ID=100A,VGS=0to10V Gate charge total Qg - 178 223 nC VDD=40V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=40V,ID=100A,VGS=0to10V Output charge1) Qoss - 207 275 nC VDS=40V,VGS=0V 1) 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 320 A TC=25°C - 1632 A TC=25°C - 0.88 1.0 V VGS=0V,IF=150A,Tj=25°C trr - 106 212 ns VR=40V,IF=100A,diF/dt=100A/µs Qrr - 318 636 nC VR=40V,IF=100A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 500 350 400 300 300 ID[A] Ptot[W] 250 200 200 150 100 100 50 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 200 101 10 1 µs 103 10 µs 102 100 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 µs ZthJC[K/W] ID[A] 175 TC[°C] DC 101 1 ms 10-1 10 ms 100 10-2 10-1 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1750 3.0 10 V 8V 7V 1500 2.5 4.5 V 1250 2.0 6V ID[A] 6V 750 RDS(on)[mΩ] 5V 1000 1.5 7V 8V 1.0 500 10 V 0.5 5V 250 4.5 V 0 0 1 2 3 4 0.0 5 0 200 400 VDS[V] 600 800 1000 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1600 3.0 2.5 1200 RDS(on)[mΩ] ID[A] 2.0 800 175 °C 1.5 1.0 25 °C 400 0.5 175 °C 25 °C 0 0 1 2 3 4 5 6 7 VGS[V] 0 3 6 9 12 15 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.0 RDS(on)=f(VGS),ID=150A;parameter:Tj 7 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 4.0 3.5 3.0 2800 µA 2.5 1.2 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 0.8 2.0 280 µA 1.5 1.0 0.4 0.5 0.0 -75 -50 -25 0 25 50 75 0.0 -75 100 125 150 175 200 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=150A,VGS=10V VGS(th)=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 104 10 25 °C 25 °C, max 175 °C 175 °C, max 104 Ciss Coss IF[A] C[pF] 103 103 102 102 Crss 101 0 10 20 30 40 50 60 70 80 101 0.00 0.25 0.50 VDS[V] 1.00 1.25 1.50 1.75 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.75 IF=f(VSD);parameter:Tj 8 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 16 V 40 V 64 V 8 102 6 VGS[V] IAV[A] 25 °C 100 °C 4 150 °C 1 10 2 100 100 101 102 103 tAV[µs] 0 0 25 50 75 100 125 150 175 200 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 88 86 VBR(DSS)[V] 84 82 80 78 76 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 01 DIMENSIONS A A1 b c D D1 E E1 E2 e e1 L P PG-HDSOP-16-U01 DATE: 18.12.2020 MILLIMETERS MIN. MAX. 2.25 2.35 0.01 0.16 0.60 0.80 0.40 0.60 9.70 10.10 8.20 8.40 14.80 15.20 10.00 10.30 5.57 5.77 1.20 8.40 1.40 1.60 2.90 3.10 Figure1OutlinePG-HDSOP-16,dimensionsinmm Final Data Sheet 10 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 0.8 16× 0.8 16× 3.375 16× 0.6 1.75 7 7.187 1.75 7.187 3.375 16× 1.2 14× Pin1 Solder mask clearance 1.2 14× 0.6 10.2 copper solder mask stencil apertures Based on stencil thickness 0.20 mm All dimensions are in units mm Figure2OutlineFootprint(PG-HDSOP-16),dimensionsinmm Final Data Sheet 11 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 12 0.3 24 15.65 4 2.85 10.3 All dimensions are in units mm The drawing is in compliance with ISO 128-30, Projection Method 1 [ ] Figure3OutlineTape(PG-HDSOP-16),dimensionsinmm Final Data Sheet 12 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,80V IPTC011N08NM5 RevisionHistory IPTC011N08NM5 Revision:2022-05-24,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2022-05-24 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.0,2022-05-24