IPTC012N08NM5ATMA1

IPTC012N08NM5 MOSFET OptiMOSTM5Power-Transistor,80V PG-HDSOP-16-2 16 Features 16 9 9 •Optimizedformotordrivesandbatterypoweredapplications •Optimizedfortopsidecooling •Highcurrentcapability •175°Crated •100%avalanchetested •Superiorthermalperformance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 1 8 8 1 Productvalidation Drain Pin 9-16, Tab FullyqualifiedaccordingtoJEDECforIndustrialApplications Gate Pin 8 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 1.2 mΩ ID 396 A Qoss 204 nC QG 175 nC Type/OrderingCode Package IPTC012N08NM5 PG-HDSOP-16 Final Data Sheet Source Pin 1-7 Marking 12N08NM5 1 RelatedLinks - Rev.2.0,2021-02-02 OptiMOSTM5Power-Transistor,80V IPTC012N08NM5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2021-02-02 OptiMOSTM5Power-Transistor,80V IPTC012N08NM5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 396 283 231 40 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=6V,TC=100°C VGS=10V,TA=25°C,RthJA=40°C/W2) - 1584 A TA=25°C - - 817 mJ ID=150A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 375 3.8 W TC=25°C TA=25°C,RthJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, Top Values Min. Typ. Max. RthJC - - 0.4 °C/W - Thermal characterization parameter, junction to lead (Pin 1-7)5) ΨJL - 9 - °C/W - Thermal characterization parameter, junction to lead (Pin 9-16)5) ΨJL - 3 - °C/W - - 40 - °C/W - Thermal resistance, junction - ambient RthJA 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information 5) ΨJL is a temperature characterization parameter according to JESD51-12 referring to the temperature difference between junction and leads in the case of natural convection. It can be used to estimate the component junction temperature in the application by measuring the temperature at the leads in the stated application environment Final Data Sheet 3 Rev.2.0,2021-02-02 OptiMOSTM5Power-Transistor,80V IPTC012N08NM5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.8 V VDS=VGS,ID=275µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.0 1.4 1.2 1.8 mΩ VGS=10V,ID=100A VGS=6V,ID=75A Gate resistance RG - 1.5 - Ω - Transconductance gfs - 250 - S |VDS|≥2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Ciss - 12000 16000 pF VGS=0V,VDS=40V,f=1MHz Coss - 2000 2600 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 85 150 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 31 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=3.5Ω Rise time tr - 19 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=3.5Ω Turn-off delay time td(off) - 69 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=3.5Ω Fall time tf - 55 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=3.5Ω Unit Note/TestCondition Output capacitance1) 1) Max. Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 55 - nC VDD=40V,ID=100A,VGS=0to10V Qg(th) - 37 - nC VDD=40V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 37 56 nC VDD=40V,ID=100A,VGS=0to10V Switching charge Qsw - 55 - nC VDD=40V,ID=100A,VGS=0to10V Gate charge total Qg - 175 219 nC VDD=40V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=40V,ID=100A,VGS=0to10V Output charge1) Qoss - 204 271 nC VDS=40V,VGS=0V 1) 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2021-02-02 OptiMOSTM5Power-Transistor,80V IPTC012N08NM5 Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 300 A TC=25°C - 1584 A TC=25°C - 0.85 1 V VGS=0V,IF=100A,Tj=25°C trr - 86 - ns VR=40V,IF=50A,diF/dt=100A/µs Qrr - 177 - nC VR=40V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.0,2021-02-02 OptiMOSTM5Power-Transistor,80V IPTC012N08NM5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 500 350 400 300 300 ID[A] Ptot[W] 250 200 200 150 100 100 50 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 101 10 1 µs 103 100 10 µs single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 µs ID[A] ZthJC[K/W] 102 101 10-1 1 ms 10 ms 10-2 0 10 10-1 DC 10-1 100 101 102 10-3 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2021-02-02 OptiMOSTM5Power-Transistor,80V IPTC012N08NM5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1600 3.2 10 V 8V 7V 1400 2.8 6V 1200 2.4 1000 2.0 800 6V 600 RDS(on)[mΩ] ID[A] 4.5 V 400 5V 1.6 7V 1.2 8V 10 V 0.8 5V 200 0.4 4.5 V 0 0 1 2 3 4 0.0 5 0 100 200 300 VDS[V] 400 500 600 700 800 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1500 3.2 2.8 1250 2.4 175 °C 1000 RDS(on)[mΩ] ID[A] 2.0 750 1.6 1.2 500 0.8 250 175 °C 25 °C 0.4 25 °C 0 0 1 2 3 4 5 6 7 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.0 RDS(on)=f(VGS),ID=100A;parameter:Tj 7 Rev.2.0,2021-02-02 OptiMOSTM5Power-Transistor,80V IPTC012N08NM5 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 4.0 3.5 3.0 2.5 1.2 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 0.8 2.0 2750 µA 1.5 275 µA 1.0 0.4 0.5 0.0 -80 -40 0 40 80 120 160 0.0 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=100A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 104 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss 104 Coss 103 IF[A] C[pF] 103 102 102 Crss 101 0 10 20 30 40 50 60 70 80 101 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.0,2021-02-02 OptiMOSTM5Power-Transistor,80V IPTC012N08NM5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 16 V 40 V 64 V 8 102 VGS[V] IAV[A] 6 25 °C 100 °C 4 1 10 150 °C 2 100 100 101 102 103 tAV[µs] 0 0 25 50 75 100 125 150 175 200 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 88 86 VBR(DSS)[V] 84 82 80 78 76 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2021-02-02 OptiMOSTM5Power-Transistor,80V IPTC012N08NM5 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 01 DIMENSIONS A A1 b c D D1 E E1 E2 e e1 L P PG-HDSOP-16-U01 DATE: 18.12.2020 MILLIMETERS MIN. MAX. 2.25 2.35 0.01 0.16 0.60 0.80 0.40 0.60 9.70 10.10 8.20 8.40 14.80 15.20 10.00 10.30 5.57 5.77 1.20 8.40 1.40 1.60 2.90 3.10 Figure1OutlinePG-HDSOP-16,dimensionsinmm Final Data Sheet 10 Rev.2.0,2021-02-02 OptiMOSTM5Power-Transistor,80V IPTC012N08NM5 RevisionHistory IPTC012N08NM5 Revision:2021-02-02,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-02-02 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2021-02-02