MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
500VCoolMOS™CEPowerTransistor
IPX50R950CE
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
500VCoolMOS™CEPowerTransistor
IPD50R950CE,IPU50R950CE
1Description
DPAK
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
IPAK
tab
1
tab
2
1
3
2 3
Drain
Pin 2
Gate
Pin 1
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.95
Ω
Qg.typ
10.5
nC
ID,pulse
12.8
A
Eoss@400V
1.28
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
Package
IPD50R950CE
PG-TO 252
IPU50R950CE
PG-TO 251
Final Data Sheet
Marking
50S950CE
2
RelatedLinks
see Appendix A
Rev.2.2,2015-11-17
500VCoolMOS™CEPowerTransistor
IPD50R950CE,IPU50R950CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.2,2015-11-17
500VCoolMOS™CEPowerTransistor
IPD50R950CE,IPU50R950CE
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
4.3
2.7
A
TC = 25°C
TC = 100°C
-
12.8
A
TC=25°C
-
-
68
mJ
ID =1.6A; VDD = 50V
EAR
-
-
0.10
mJ
ID =1.6A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
1.6
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...400V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation (non FullPAK)
TO-252, TO-251
Ptot
-
-
34
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
Continuous diode forward current
IS
-
-
3.7
A
TC=25°C
Diode pulse current2)
IS,pulse
-
-
12.8
A
TC = 25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD
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