IPU60R2K0C6AKMA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 DataSheet Rev.2.2 Final Industrial&Multimarket 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 1Description IPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. tab 1 2 3 Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2 Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server, Telecom,UPS. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 650 V RDS(on),max 2 Ω Qg,typ 6.7 nC ID,pulse 6 A Eoss @ 400V 0.76 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPU60R2K0C6 PG-TO 251 6R2K0C6 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Values Min. Typ. Max. 2.4 Unit Note/TestCondition A TC=25°C TC=100°C 1.5 Pulsed drain current ID‚pulse 6 A TC=25°C Avalanche energy, single pulse EAS 11 mJ ID=0.4A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.06 mJ ID=0.4A,VDD=50V Avalanche current, repetitive IAR 0.4 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V Gate source voltage VGS -20 20 V static -30 30 -55 150 °C 2) AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg Continuous diode forward current IS 2.1 A TC=25°C Diode pulse current IS‚pulse 6 A TC=25°C Reverse diode dv/dt dv/dt 15 V/ns Maximum diode commutation speed dif/dt 500 Power dissipation Ptot 22.3 3) VDS=0...480V,ISD≤ID, Tj=25°C A/µs (see table 8) TC=25°C 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 4 Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 3Thermalcharacteristics Table3ThermalcharacteristicsIPAK Values Parameter Symbol Thermal resistance, junction - case RthJC 5.6 °C/W Thermal resistance, junction - ambient1) RthJA 62 °C/W Min. Typ. Max. Unit Tsold SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm² cooling area 35 Soldering temperature, wave- & reflowsoldering allowed Note/TestCondition 260 °C reflow MSL 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 5 Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Parameter Symbol Drain-source breakdown voltage V(BR)DSS 600 Gate threshold voltage VGS(th) 2.5 Zero gate voltage drain current IDSS Min. Typ. 3 Unit Note/TestCondition V VGS=0V,ID=0.25mA 3.5 V VDS=VGS,ID=0.1mA 1 µA VDS=600V,VGS=0V,Tj=25°C Max. VDS=600V,VGS=0V,Tj=150°C 10 Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) 1.800 100 nA VGS=20V,VDS=0V 2 Ω VGS=10V,ID=0.8A,Tj=25°C VGS=10V,ID=0.76A,Tj=150°C 4.680 Gate resistance RG 12 Ω f=1MHz,opendrain Unit Note/TestCondition VGS=0V,VDS=100V,f=1MHz Table5Dynamiccharacteristics Values Parameter Symbol Input capacitance Ciss 140 pF Output capacitance Coss 12 pF Effective output capacitance, energy related1) Co(er) 8.5 pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) 30 pF ID=constant,VGS=0V, VDS=0...480V Turn-on delay time td(on) 7 ns Rise time tr 7 ns Turn-off delay time td(off) 30 ns Fall time tf 50 ns Min. Typ. Max. VDD=400V,VGS=10V,ID=0.9A, RG=12.2Ω (see table 9) Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Qgs Gate to drain charge Values Unit Note/TestCondition 0.8 nC Qgd 3.6 nC VDD=480V,ID=0.9A, VGS=0to10V Gate charge total Qg 6.7 nC Gate plateau voltage Vplateau 5.4 V 1) 2) Min. Typ. Max. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Final Data Sheet 6 Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage VSD Reverse recovery time Values Unit Note/TestCondition 0.9 V VGS=0V,IF=0.9A,Tj=25°C trr 180 ns Reverse recovery charge Qrr 0.67 µC VR=400V,IF=0.9A, diF/dt=100A/µs (see table 8) Peak reverse recovery current Irrm 7.1 A Final Data Sheet Min. 7 Typ. Max. Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 5Electricalcharacteristicsdiagrams Powerdissipation Max.transientthermalimpedance 101 28 0.5 0.2 24 0.1 20 0.05 16 ZthJC[K/W] Ptot[W] 0.02 12 0.01 10 0 single pulse 8 4 0 0 40 80 120 10-1 160 10-5 10-4 10-3 TC[°C] 10-2 10-1 tp[s] Ptot=f(TC) ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea(limitedbyon-stateresistance) Safeoperatingarea(limitedbyon-stateresistance) 1 10 101 1 10µs µs 100 µs 1 ms 10 ms 1 µs 10 µs 100 µs 1 ms 10 ms DC DC ID[A] 100 ID[A] 100 10-1 10-2 10-1 100 101 102 103 VDS[V] 100 101 102 103 VDS[V] ID=f(VDS);VGS>7V;TC=25°C;D=0;parameter:tp Final Data Sheet 10-2 ID=f(VDS);VGS>7V;TC=80°C;D=0;parameter:tp 8 Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 Typ.outputcharacteristics Typ.outputcharacteristics 7 4 20 V 10 V 6 20 V 10 V 8V 3 5 8V 7V ID[A] ID[A] 4 7V 2 6V 3 5.5 V 6V 2 1 5V 5.5 V 1 4.5 V 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance 10 6 5 8 5V 5.5 V 6V 6.5 V 7V 4 10 V RDS(on)[Ω] RDS(on)[Ω] 6 4 98% 3 typ 2 2 0 1 0 1 2 3 4 0 -60 -20 20 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=0.76A;VGS=10V 9 Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 Typ.transfercharacteristics Typ.gatecharge 7 10 9 25 °C 6 8 5 120 V 7 480 V ID[A] 150 °C 3 VGS[V] 6 4 5 4 3 2 2 1 1 0 0 2 4 6 8 0 10 0 1 2 3 VGS[V] 4 5 6 7 Qgate[nC] ID=f(VGS);VDS=20V VGS=f(Qgate);ID=0.9Apulsed Avalancheenergy Drain-sourcebreakdownvoltage 12 680 660 10 640 VBR(DSS)[V] EAS[mJ] 8 6 620 600 4 580 2 0 560 20 60 100 140 180 540 -60 -20 Tj[°C] 60 100 140 180 Tj[°C] EAS=f(Tj);ID=0.4A;VDD=50V Final Data Sheet 20 VBR(DSS)=f(Tj);ID=0.25mA 10 Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 Typ.capacitances Typ.Cossstoredenergy 104 1.5 Ciss Coss 103 Crss Eoss[µJ] C[pF] 1.0 102 0.5 101 100 0 100 200 300 400 500 600 0.0 0 VDS[V] 100 200 300 400 500 600 VDS[V] C=f(VDS);VGS=0V;f=1MHz Eoss=f(VDS) Forwardcharacteristicsofreversediode 101 IF[A] 125 °C 25 °C 100 10-1 0.0 0.5 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj Final Data Sheet 11 Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 12 ID VDS Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 7PackageOutlines Figure1OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 13 Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 8AppendixA Table11RelatedLinks • IFXC6ProductBrief:www.infineon.com • IFXC6Portfolio:www.infineon.com • IFXCoolMOSWebpage:www.infineon.com • IFXDesignTools:www.infineon.com Final Data Sheet 14 Rev.2.2,2015-10-09 600VCoolMOS™C6PowerTransistor IPU60R2K0C6 RevisionHistory IPU60R2K0C6 Revision:2015-10-09,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2012-02-02 Final datasheet release 2.2 2015-10-09 Updated with Halogen free information WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.2,2015-10-09