IPW60R037CSFD

IPW60R037CSFD MOSFET 600VCoolMOSªCSFDPowerTransistor PG-TO247-3 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.TheIPW60R037CSFDisan optimizeddevicetailoredtoaddresstheoffboardEVchargingmarket segment. Thankstolowgatecharge(Qg)andimprovedswitchingbehavioritoffers highestefficiencyinthetargetedmarket.Inadditiontothatitcomesalong withanintegratedfastbodydiodeandtremendouslyreducedreverse recoverycharge(Qrr)leadingtohighestreliabilityinresonanttopologies. DuetothesefeaturestheIPW60R037CSFDmeetstheefficiencyand reliabilitystandardsoftheoffboardEVchargingstationmarketand furthermoresupportshighpowerdensitysolutions. Drain Pin 2 Features •Fastbodydiode •Industry-leadingreverserecoverycharge(Qrr) •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Costoptimization Gate Pin 1 Source Pin 3 Benefits •Excellenthardcommutationruggednessandreliabilityinsoftswitching applications •Highestefficiencywithoutstandingease-of-use/performancetrade-off •Enablingincreasedpowerdensitysolutions •Balancedprice/performanceratiofortheEVchargingmarket Potentialapplications SuiteableforSoft&HardSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLC&PFCApplications–EV Charging ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe relevanttestsofJEDEC47/20/22 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 37 mΩ Qg,typ 136 nC ID,pulse 236 A Eoss @ 400V 15.6 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package IPW60R037CSFD PG-TO 247-3 Final Data Sheet Marking 60R037CS 1 RelatedLinks see Appendix A Rev.2.0,2017-12-11 600VCoolMOSªCSFDPowerTransistor IPW60R037CSFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2017-12-11 600VCoolMOSªCSFDPowerTransistor IPW60R037CSFD 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 54 34 A TC=25°C TC=100°C - 236 A TC=25°C - - 277 mJ ID=7.8A; VDD=50V; see table 10 EAR - - 1.39 mJ ID=7.8A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 7.8 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 245 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws IS - - 54 A TC=25°C Diode pulse current IS,pulse - - 236 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD