IPW60R045CPAFKSA1

IPW60R045CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 V 0.045 Ω 150 nC Features • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications Type Package Marking IPW60R045CPA PG-TO247-3 6R045A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 60 T C=100 °C 38 Pulsed drain current1) I D,pulse T C=25 °C 230 Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 1950 Avalanche energy, repetitive t AR1),2) E AR I D=11 A, V DD=50 V 3 Avalanche current, repetitive t AR1),2) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage Unit A mJ 11 A V DS=0...480 V 50 V/ns V GS static ±20 V Power dissipation P tot T C=25 °C 431 W Operating temperature Tj -40 ... 150 °C Storage temperature T stg -40 ... 150 Mounting torque Rev. 2.0 M3 and M3.5 screws page 1 60 Ncm 2010-02-15 IPW60R045CPA Maximum ratings, at T j=25 °C, unless otherwise specified Value Parameter Symbol Conditions Unit Continuous diode forward current IS Diode pulse current1) I S,pulse 230 Reverse diode dv /dt 3) dv /dt 15 V/ns Parameter Symbol Conditions Values Unit 44 T C=25 °C A min. typ. max. - - 0.29 Thermal characteristics K/W Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V 2.5 3 3.5 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=3 mA Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 10 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=44 A, T j=25 °C - 0.04 0.045 Ω V GS=10 V, I D=44 A, T j=150 °C - 0.11 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 2.0 RG page 2 Ω 2010-02-15 IPW60R045CPA Parameter Values Symbol Conditions Unit min. typ. max. - 6800 - - 320 - - 310 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related4) V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related5) C o(tr) - 820 - Turn-on delay time t d(on) - 30 - Rise time tr - 20 - Turn-off delay time t d(off) - 100 - Fall time tf - 10 - Gate to source charge Q gs - 34 - Gate to drain charge Q gd - 51 - Gate charge total Qg - 150 190 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 600 - ns - 17 - µC - 60 - A V DD=400 V, V GS=10 V, I D=44 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=44 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=44 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) Pulse width t p limited by T j,max 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) I SD≤I D, di /dt ≤100A/µs,V DClink = 400V, V peak