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IPW60R099P6

IPW60R099P6

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TO-247-3

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
IPW60R099P6 数据手册
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPx60R099P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 1Description TO-247 TO-220 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) TO-220FP tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 99 mΩ Qg.typ 70 nC ID,pulse 109 A Eoss@400V 8.8 µJ Body diode di/dt 300 A/µs Type/OrderingCode Package IPW60R099P6 PG-TO 247 IPP60R099P6 PG-TO 220 IPA60R099P6 PG-TO 220 FullPAK Final Data Sheet Marking 6R099P6 2 RelatedLinks see Appendix A Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Final Data Sheet 3 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 37.9 24.0 A TC=25°C TC=100°C - 109 A TC=25°C - - 796 mJ ID=6.6A; VDD=50V; see table 10 EAR - - 1.21 mJ ID=6.6A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 6.6 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-220, TO-247 Ptot - - 278 W TC=25°C Power dissipation (FullPAK) TO-220FP Ptot - - 34 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque (Non FullPAK) TO-220, TO-247 - - - 60 Ncm M3 and M3.5 screws Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 32.9 A TC=25°C Diode pulse current IS,pulse - - 109 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD
IPW60R099P6
物料型号: - IPW60R099P6 - IPP60R099P6 - IPA60R099P6

器件简介: CoolMOS™ P6系列是英飞凌科技根据超结(SJ)原理设计的高电压功率MOSFET的革命性技术。该系列结合了领先的SJ MOSFET供应商的经验和高级创新,提供了快速开关SJ MOSFET的所有优势,同时不牺牲易用性。极低的开关和导通损耗使开关应用更加高效、紧凑、轻便和冷却。

引脚分配: - Drain(漏极):引脚2,标签 - Gate(栅极):引脚1 - Source(源极):引脚3

参数特性: - VDs @Tj.max(最大结温下的漏源电压):650V - Ros(on).max(最大导通电阻):99mΩ - Qg.typ(典型栅极电荷):70nC - lD.pulse(脉冲漏电流):109A - Eoss@400V(400V时的输出电荷):8.8FJ - Body diode di/dt(体二极管di/dt):300A/us

功能详解: CoolMOS™ P6系列提供增强的MOSFET dv/dt耐量、极低的损耗、高耐量、易于使用/驱动、无铅镀层、无卤素模具化合物,并且符合JEDEC工业级应用标准。

应用信息: 适用于例如PC Silverbox、适配器、LCD和PDP电视、照明、服务器、电信和UPS的PFC阶段、硬开关PWM阶段和共振开关阶段。

封装信息: - TO-220FP - TO-247 - TO-220
IPW60R099P6 价格&库存

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