IPW65R029CFD7XKSA1

IPW65R029CFD7 MOSFET 650VCoolMOSªCFD7SJPowerDevice PG-TO247-3 Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof theCFD7familyandisasuccessortothe650VCoolMOS™CFD2. Resultingfromimprovedswitchingperformanceandexcellentthermal behavior,650VCooMOS™CFD7offershighestefficiencyinresonant switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard commutationrobustness.TheCoolMOS™CFD7technologymeets highestefficiencyandreliabilitystandardsandfurthermoresupportshigh powerdensitysolutions. Tab 1 2 3 Features Drain Pin 2 •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature *1 Gate Pin 1 *1: Internal body diode Benefits Source Pin 3 •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowerdensitysolutions •OutstandinglightloadefficiencyinindustrialSMPSapplications •ImprovedfullloadefficiencyinindustrialSMPSapplications •PricecompetitivenessoverpreviousCoolMOS™families Potentialapplications SuitableforSoftSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server, Telecom,EVCharging,Solar Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 29 mΩ Qg,typ 145 nC ID,pulse 304 A Eoss @ 400V 19.8 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package IPW65R029CFD7 PG-TO247-3 Final Data Sheet Marking 65R029F7 1 RelatedLinks see Appendix A Rev.2.1,2020-07-31 650VCoolMOSªCFD7SJPowerDevice IPW65R029CFD7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2020-07-31 650VCoolMOSªCFD7SJPowerDevice IPW65R029CFD7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 69 44 A TC=25°C TC=100°C - 304 A TC=25°C - - 358 mJ ID=7.3A; VDD=50V; see table 10 EAR - - 1.79 mJ ID=7.3A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 7.3 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 305 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - - - - 60 Ncm M3 and M3.5 screws IS - - 69 A TC=25°C Diode pulse current IS,pulse - - 304 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD