IPW65R050CFD7AXKSA1

IPW65R050CFD7A MOSFET 650VCoolMOSªCFD7ASJPowerDevice PG-TO247-3 650VCoolMOS™CFD7AisInfineon'slatestgenerationofmarketleading automotivequalifiedhighvoltageCoolMOS™MOSFETs.Inadditiontothe well-knownattributesofhighqualityandreliabilityrequiredbythe automotiveindustry,thenewCoolMOS™CFD7Aseriesprovidesforan integratedfastbodydiodeandcanbeusedforPFCandresonant switchingtopologiesliketheZVSphase-shiftfull-bridgeandLLC. Tab 1 2 3 Features •Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr •LowestFOMRDS(on)*QgandRDS(on)*Eoss •100%avalanchetested •Best-in-classRDS(on)inSMDandTHDpackages Drain Pin 2, Tab Benefits Gate Pin 1 •Optimizedforhigherbatteryvoltagesupto475Vthankstofurther improvedrobustness •Lowerswitchinglossesenablinghigherswitchingfrequencies •Highqualityandreliability •Increasedefficiencyinlightloadandfullloadconditions *1: Internal body diode *1 Source Pin 3 Potentialapplications SuitableforPFCandDC-DCstagesfor: •UnidirectionalandbidirectionalDC-DCconverters, •On-BoardbatteryChargers Productvalidation QualifiedaccordingtoAECQ101 Pleasenote:Forproductionpartapprovalprocess(PPAP)releasewe proposetoshareapplicationrelatedinformationduringanearlydesign phasetoavoiddelaysinPPAPrelease.PleasecontactInfineonsales office. Table1KeyPerformanceParameters Parameter Value Unit VDS 650 V RDS(on),max 50 mΩ Qg,typ 102 nC ID,pulse 211 A Eoss @ 400V 13.0 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package IPW65R050CFD7A PG-TO247-3 Final Data Sheet 1 Marking RelatedLinks 65A050F7 see Appendix A Rev.2.2,2021-11-22 650VCoolMOSªCFD7ASJPowerDevice IPW65R050CFD7A TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.2,2021-11-22 650VCoolMOSªCFD7ASJPowerDevice IPW65R050CFD7A 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 45 29 A TC=25°C TC=100°C - 211 A TC=25°C - - 248 mJ ID=6.4A; VDD=50V; see table 10 IAS - - 6.4 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS,pulse -30 - 30 V frepetition