IPW65R060CFD7
MOSFET
650VCoolMOSªCFD7SJPowerDevice
PG-TO247-3
Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof
theCFD7familyandisasuccessortothe650VCoolMOS™CFD2.
Resultingfromimprovedswitchingperformanceandexcellentthermal
behavior,650VCooMOS™CFD7offershighestefficiencyinresonant
switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As
partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends
alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard
commutationrobustness.TheCoolMOS™CFD7technologymeets
highestefficiencyandreliabilitystandardsandfurthermoresupportshigh
powerdensitysolutions.
Tab
1
2
3
Features
Drain
Pin 2
•Ultra-fastbodydiode
•650Vbreakdownvoltage
•Best-in-classRDS(on)
•Reducedswitchinglosses
•LowRDS(on)dependencyovertemperature
*1
Gate
Pin 1
*1: Internal body diode
Benefits
Source
Pin 3
•Excellenthardcommutationruggedness
•Extrasafetymarginfordesignswithincreasedbusvoltage
•Enablingincreasedpowerdensitysolutions
•OutstandinglightloadefficiencyinindustrialSMPSapplications
•ImprovedfullloadefficiencyinindustrialSMPSapplications
•PricecompetitivenessoverpreviousCoolMOS™families
Potentialapplications
SuitableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging,Solar
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
60
mΩ
Qg,typ
68
nC
ID,pulse
146
A
Eoss @ 400V
9.5
µJ
Body diode diF/dt
1300
A/µs
Type/OrderingCode
Package
IPW65R060CFD7
PG-TO247-3
Final Data Sheet
Marking
65R060F7
1
RelatedLinks
see Appendix A
Rev.2.1,2020-08-12
650VCoolMOSªCFD7SJPowerDevice
IPW65R060CFD7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.1,2020-08-12
650VCoolMOSªCFD7SJPowerDevice
IPW65R060CFD7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
36
23
A
TC=25°C
TC=100°C
-
146
A
TC=25°C
-
-
171
mJ
ID=5.1A; VDD=50V; see table 10
EAR
-
-
0.86
mJ
ID=5.1A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
5.1
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
120
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
171
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
-
-
-
60
Ncm M3 and M3.5 screws
IS
-
-
36
A
TC=25°C
Diode pulse current
IS,pulse
-
-
146
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
VDS=0...400V,ISD
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