MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Data Sheet
Rev. 2.0, 2011-03-15
Final
Industrial & Multimarket
650V CoolMOS™ C6 Power Transistor
1
IPW65R070C6
Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
designed according to the superjunction (SJ) principle and pioneered by Infineon
Technologies. CoolMOS™ C6 series combines the experience of the leading SJ
MOSFET supplier with high class innovation. The offered devices provide all
benefits of a fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching applications
even more efficient, more compact, lighter, and cooler.
drain
pin 2
Features
•
•
•
•
•
gate
pin 1
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
Qualified for industrial grade applications according to JEDEC1)
Pb-free plating, Halogen free mold compound
source
pin 3
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for
e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar.
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
Table 1
Key Performance Parameters
Parameter
Value
Unit
Related Links
VDS @ Tj,max
700
V
IFX CoolMOS Webpage
RDS(on),max
0.07
IFX Design tools
Qg,typ
170
nC
ID,pulse
150
A
Eoss @ 400V
13
µJ
Body diode di/dt
300
A/µs
Type
Package
Marking
IPW65R070C6
PG-TO247
65C6070
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2011-03-15
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Table of Contents
Table of Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev. 2.0, 2011-03-15
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Maximum ratings
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Continuous drain current
1)
Values
ID
Min.
Typ.
Max.
-
-
53.5
Unit
Note / Test Condition
A
TC= 25 °C
33.8
2)
TC= 100°C
Pulsed drain current
ID,pulse
-
-
150
A
TC=25 °C
Avalanche energy, single pulse
EAS
-
-
1160
mJ
ID=9.3 A,VDD=50 V
Avalanche energy, repetitive
EAR
-
-
1.76
Avalanche current, repetitive
IAR
-
-
9.3
A
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480 V
Gate source voltage
VGS
-20
-
20
V
static
-30
ID=9.3 A,VDD=50 V
30
AC (f>1 Hz)
Power dissipation
Ptot
-
-
391
W
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
-
60
Ncm
M3 and M3.5 screws
IS
-
-
46.3
A
TC=25 °C
IS,pulse
-
-
150
A
TC=25 °C
dv/dt
-
-
15
V/ns
VDS=0...400 V, ISD ID,
Tj=25 °C
Mounting torque
Continuous diode forward current
2)
Diode pulse current
Reverse diode dv/dt
3)
Maximum diode commutation
dif/dt
300
3)
speed
1) Limited by Tj,max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG; Vpeak 7V; D=0; parameter tp
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Rev. 2.0, 2011-03-15
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Electrical characteristics diagrams
Table 10
Typ. output characteristics Tj=25 °C
Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 11
Typ. drain-source on-state resistance
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=17.6 A; VGS=10 V
Final Data Sheet
8
Rev. 2.0, 2011-03-15
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Electrical characteristics diagrams
Table 12
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
VGS=f(Qgate), ID=26.3 A pulsed
Table 13
Avalanche energy
Drain-source breakdown voltage
EAS=f(Tj); ID=9.3 A; VDD=50 V
VBR(DSS)=f(Tj); ID=1.0 mA
Final Data Sheet
9
Rev. 2.0, 2011-03-15
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Electrical characteristics diagrams
Table 14
Typ. capacitances
Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz
EOSS=f(VDS)
Table 15
Forward characteristics of reverse diode
IF=f(VSD); parameter: Tj
Final Data Sheet
10
Rev. 2.0, 2011-03-15
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Package outlines
6
Package outlines
Figure 1
Outlines TO-247, dimensions in mm/inches
Final Data Sheet
11
Rev. 2.0, 2011-03-15
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Revision History
7
Revision History
Revision History: 2011-03-15, Rev. 2.0
Previous Revision:
Revision
Subjects (major changes since last revision)
2.0
Release of final data sheet
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Edition 2011-03-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Final Data Sheet
12
Rev. 2.0, 2011-03-15
