IPW65R145CFD7AXKSA1

IPW65R145CFD7A MOSFET 650VCoolMOSªCFD7ASJPowerDevice PG-TO247-3 650VCoolMOS™CFD7AisInfineon'slatestgenerationofmarketleading automotivequalifiedhighvoltageCoolMOS™MOSFETs.Inadditiontothe well-knownattributesofhighqualityandreliabilityrequiredbythe automotiveindustry,thenewCoolMOS™CFD7Aseriesprovidesforan integratedfastbodydiodeandcanbeusedforPFCandresonant switchingtopologiesliketheZVSphase-shiftfull-bridgeandLLC. Tab 1 2 3 Features •Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr •LowestFOMRDS(on)*QgandRDS(on)*Eoss •100%avalanchetested •Best-in-classRDS(on)inSMDandTHDpackages Drain Pin 2, Tab Benefits *1 Gate Pin 1 *2 •Optimizedforhigherbatteryvoltagesupto475Vthankstofurther improvedrobustness •Lowerswitchinglossesenablinghigherswitchingfrequencies •Highqualityandreliability •Increasedefficiencyinlightloadandfullloadconditions *1: Internal body diode *2: Integrated ESD diode Source Pin 3 Potentialapplications SuitableforPFCandDC-DCstagesfor: •UnidirectionalandbidirectionalDC-DCconverters, •On-BoardbatteryChargers Productvalidation QualifiedaccordingtoAECQ101 Pleasenote:Forproductionpartapprovalprocess(PPAP)releasewe proposetoshareapplicationrelatedinformationduringanearlydesign phasetoavoiddelaysinPPAPrelease.PleasecontactInfineonsales office. Table1KeyPerformanceParameters Parameter Value Unit VDS 650 V RDS(on),max 145 mΩ Qg,typ 36 nC ID,pulse 72 A Eoss @ 400V 4.7 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package IPW65R145CFD7A PG-TO247-3 Final Data Sheet 1 Marking RelatedLinks 65A145F7 see Appendix A Rev.2.1,2021-11-18 650VCoolMOSªCFD7ASJPowerDevice IPW65R145CFD7A TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2021-11-18 650VCoolMOSªCFD7ASJPowerDevice IPW65R145CFD7A 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 17 11 A TC=25°C TC=100°C - 72 A TC=25°C - - 85 mJ ID=4.1A; VDD=50V; see table 10 IAS - - 4.1 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS,pulse -30 - 30 V frepetition