IPW65R190E6FKSA1

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.1, 2018-02-28 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • • • • Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free drain pin 2 gate pin 1 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 0.19  Qg,typ 73 nC ID,pulse 66 A Eoss @ 400V 5.9 µJ Body diode di/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPW65R190E6 PG-TO247 IFX CoolMOS Webpage IPB65R190E6 PG-TO263 IFX Design tools IPI65R190E6 PG-TO262 IPP65R190E6 PG-TO220 IPA65R190E6 PG-TO220 FullPAK 65E6190 1) J-STD20 and JESD22 Rev. 2.1 Page 2 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Table of Contents Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Rev. 2.1 Page 3 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol 1) Continuous drain current ID Values Min. Typ. Max. - - 20.2 Unit Note / Test Condition A TC= 25 °C 12.8 2) TC= 100°C Pulsed drain current ID,pulse - - 66 A TC=25 °C Avalanche energy, single pulse EAS - - 485 mJ ID=3.5 A,VDD=50 V Avalanche energy, repetitive EAR - - 0.73 Avalanche current, repetitive IAR - - 3.5 A MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V Gate source voltage VGS -20 - 20 V static -30 ID=3.5 A,VDD=50 V 30 AC (f>1 Hz) Power dissipation for TO-220, TO-247, TO-262, TO-263 Ptot - - 151 Power dissipation for TO-220 FullPAK Ptot - - 34 Operating and storage temperature Tj,Tstg -55 - 150 °C - - 60 Ncm Mounting torque TO-220, TO-247 Mounting torque TO-220 FullPAK W 50 Continuous diode forward current 2) Diode pulse current Reverse diode dv/dt 3) TC=25 °C M3 and M3.5 screws M2.5 screws IS - - 17.5 A TC=25 °C IS,pulse - - 66 A TC=25 °C dv/dt - - 15 V/ns VDS=0...400 V,ISD  ID, Tj=25 °C 500 A/µs dif/dt Maximum diode commutation speed3) 1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG Final Data Sheet Rev. 2.1 4 Page 4 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Thermal characteristics 3 Thermal characteristics Table 3 Thermal characteristics non FullPAK Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 0.83 Thermal resistance, junction ambient RthJA - - 62 Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 Table 4 °C/W leaded °C 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition Thermal characteristics FullPAK Parameter Symbol Values Min. Typ. Max. Thermal resistance, junction - case RthJC - - 3.7 Thermal resistance, junction ambient RthJA - - 80 Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 Table 5 Note / Test Condition °C/W leaded °C 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition Thermal characteristics SMD Parameter Symbol Values Min. Typ. Max. Thermal resistance, junction - case RthJC - - 0.83 RthJA - - 62 SMD version, device on PCB, minimal footprint - 35 - SMD version, device on PCB, 6cm2 cooling area1) - - 260 Thermal resistance, junction ambient Soldering temperature, wave- & reflow soldering allowed Tsold °C/W °C reflow MSL1 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet Rev. 2.1 5 Page 5 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 6 Static characteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Values Min. Typ. Max. 650 - - Unit Note / Test Condition V VGS=0 V, ID=1.0 mA Gate threshold voltage VGS(th) 2.5 3 3.5 Zero gate voltage drain current IDSS - - 1 - 10 - - - 100 nA VGS=20 V, VDS=0 V - 0.17 0.19  VGS=10 V, ID=7.3 A, Tj=25 °C - 0.44 - - 6 - Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate resistance Table 7 RG VDS=VGS, ID=0.73 mA VDS=650 V, VGS=0 V, Tj=25 °C µA VDS=650 V, VGS=0 V, Tj=150 °C VGS=10 V, ID=7.3 A, Tj=150 °C  f=1 MHz, open drain Dynamic characteristics Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition pF VGS=0 V, VDS=100 V, f=1 MHz Input capacitance Ciss - 1620 - Output capacitance Coss - 98 - Effective output capacitance, energy related1) Co(er) - 65 - VGS=0 V, VDS=0...480 V Effective output capacitance, time related2) Co(tr) - 308 - ID=constant, VGS=0 V VDS=0...480V Turn-on delay time td(on) - 12 - Rise time tr - 11 - Turn-off delay time td(off) - 112 - ns VDD=400 V, VGS=13 V, ID=11 A, RG= 3.4  Fall time tf 10 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Final Data Sheet Rev. 2.1 6 Page 6 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Electrical characteristics Table 8 Gate charge characteristics Parameter Symbol Values Min. Typ. Max. Gate to source charge Qgs - 8.9 - Gate to drain charge Qgd - 38 - Gate charge total Qg - 73 - Gate plateau voltage Vplateau - 5.5 - Table 9 Unit Note / Test Condition nC VDD=480 V, ID=11 A, VGS=0 to 10 V V Reverse diode characteristics Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Diode forward voltage VSD - 0.9 - V VGS=0 V, IF=11 A, Tj=25 °C Reverse recovery time trr - 410 - ns Reverse recovery charge Qrr - 6.1 - µC VR=400 V, IF=11 A, diF/dt=100 A/µs Peak reverse recovery current Irrm - 28 - A Final Data Sheet Rev. 2.1 7 Page 7 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 10 Power dissipation Non FullPAK Power dissipation FullPAK Ptot = f(TC) Ptot = f(TC) Table 11 Max. transient thermal impedance Non FullPAK Max. transient thermal impedance FullPAK Z(thJC)=f(tp); parameter: D=tp/T Final Data Sheet Rev. 2.1 Z(thJC)=f(tp); parameter: D=tp/T 8 Page 8 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Electrical characteristics diagrams Table 12 Safe operating area TC=25 °C Non FullPAK Safe operating area TC=25 °C FullPAK ID=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter tp ID=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter tp Table 13 Safe operating area TC=80 °C Non FullPAK Safe operating area TC=80 °C FullPAK ID=f(VDS); TC=80 °C; VGS > 7V; D=0; parameter tp ID=f(VDS); TC=80 °C; VGS > 7V; D=0; parameter tp Final Data Sheet Rev. 2.1 9 Page 9 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Electrical characteristics diagrams Table 14 Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS Table 15 Typ. drain-source on-state resistance Drain-source on-state resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=7.3 A; VGS=10 V Final Data Sheet Rev. 2.1 10 Page 10 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Electrical characteristics diagrams Table 16 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=11 A pulsed Table 17 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=3.5 A; VDD=50 V VBR(DSS)=f(Tj); ID=1.0 mA Final Data Sheet Rev. 2.1 11 Page 11 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Electrical characteristics diagrams Table 18 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS) Table 19 Forward characteristics of reverse diode IF=f(VSD); parameter: Tj Final Data Sheet Rev. 2.1 12 Page 12 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Test circuits 6 Test circuits Table 20 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform VDS 90% VDS VGS 10% VGS td(on) td(off) tr toff ton Table 21 tf Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS VDS ID Table 22 Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform ID i v diF /d t trr = tS + tF Q rr = Q S + Q F trr tS tF R G1 ΙF VDS RG2 Ι RRM QS 10% Ι RRM QF d irr /d t 90% Ι RRM RG1 = RG2 Final Data Sheet Rev. 2.1 t VRRM v SIL00088 13 Page 13 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Package outlines 7 Package outlines Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Rev. 2.1 14 Page 14 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Package outlines Figure 2 Outlines TO-220, dimensions in mm/inches Final Data Sheet Rev. 2.1 15 Page 15 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Package outlines 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 øP Q Figure 3 DOCUMENT NO. Z8B00003319 REVISION 07 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 27.01.2017 Outlines TO-220 FullPAK, dimensions in mm Final Data Sheet Rev. 2.1 MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 2.86 2.42 0.90 0.65 0.95 1.38 1.51 0.95 0.65 1.38 0.65 1.51 0.63 0.40 16.15 15.67 9.83 8.97 10.65 10.00 2.54 29.75 28.70 13.75 12.78 3.45 2.83 3.30 3.00 3.50 3.15 16 Page 16 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Package outlines Figure 4 Outlines TO-262, dimensions in mm/inches Final Data Sheet Rev. 2.1 17 Page 17 Rev. 2.0, 2011-05-13 2018-02-28 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Package outlines Figure 5 Outlines TO-263, dimensions in mm/inches Final Data Sheet Rev. 2.1 18 Page 18 Rev. 2.0, 2011-05-13 2018-02-28 650VCoolMOSªE6PowerTransistor IPx65R190E6 RevisionHistory IPx65R190E6 Revision:2018-03-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2018-03-05 Outline PG-TO-220 FullPAK update TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 19 Rev.2.1,2018-03-05