IPW95R060PFD7XKSA1

IPW95R060PFD7 MOSFET 950VCoolMOSªPFD7SJPowerDevice PG-TO247-3 Thelatest950VCoolMOS™PFD7seriessetsanewbenchmarkinthe superjunction(SJ)technologies.Thistechnologyisdesignedtoaddress LightingandIndustrialSMPSapplicationsbycombiningbest-in-class performancewithstate-of-the-arteaseofuse.Comparedtothe CoolMOS™P7families,thePFD7offersanintegratedultra-fastbody diodeenablingusageinresonanttopologieswithmarketslowestreverse recoverycharge(Qrr). Tab 1 2 3 Features •Integratedultra-fastbodydiode •Best-in-classreverserecoverychargeQrr •Best-in-classFOMRDS(on)*Eoss,reducedQg,Ciss,andCoss •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •Integratedfastbodydiode •Best-in-classCoolMOS™qualityandreliability •Fullyoptimizedportfolio •Best-in-classRDS(on)inTHDandSMDpackages •ESDprotectionmin.Class2(HBM) Drain Pin 2, Tab Gate Pin 1 *1: Internal body diode *1 Source Pin 3 Benefits •Excellenthardcommutationrobustnessenablingusageinresonant topologies •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowerdensitysolutions •ImprovedfullloadefficiencyinindustrialSMPSapplications •PricecompetitivenessoverpreviousCoolMOS™families •ImprovedproductionyieldbyreducingESDrelatedfailures Potentialapplications •Suitableforhard&softswitchingtopologies •OptimizedforusageinLLCandZVStopologies •PFC&LLCapplicationsinLightingandIndustrialSMPS Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj = 25 °C 950 V RDS(on),max 60 mΩ Qg,typ 315 nC ID 74.7 A Eoss @ 500V 20.8 µJ Body diode diF/dt 1300 A/µs Qoss @ 500V 0.74 µC Type/OrderingCode Package IPW95R060PFD7 PG-TO247-3 Final Data Sheet 1 Marking RelatedLinks 95R060D7 see Appendix A Rev.2.1,2022-04-22 950VCoolMOSªPFD7SJPowerDevice IPW95R060PFD7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2022-04-22 950VCoolMOSªPFD7SJPowerDevice IPW95R060PFD7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 74.7 47.3 A TC=25°C TC=100°C - 342 A TC=25°C - - 228 mJ ID=5.7A; VDD=50V; see table 10 EAR - - 1.75 mJ ID=5.7A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 5.7 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 446 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws IS - - 53 A TC=25°C Diode pulse current IS,pulse - - 342 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD