IPZ60R099C7XKSA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 600VCoolMOS™C7PowerTransistor IPZ60R099C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™C7PowerTransistor IPZ60R099C7 1Description PG-TO247-4 CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •Easytouse/drive •Pb-freeplating,halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) •4pinkelvinsourceconcept Drain Pin 1 Gate Pin 4 Driver Source Pin 3 Power Source Pin 2 Benefits •IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency •Enablinghighersystemefficiencybylowerswitchinglosses •Increasedpowerdensitysolutionsduetosmallerpackages •Suitableforapplicationssuchasserver,telecomandsolar •Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional 3pinpackage Applications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 99 mΩ Qg.typ 42 nC ID,pulse 83 A ID,continuous @ Tj1 Hz) Power dissipation Ptot - - 110 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws Continuous diode forward current IS - - 22 A TC=25°C Diode pulse current2) IS,pulse - - 83 A TC=25°C Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD