IQE006NE2LM5CGATMA1

IQE006NE2LM5CG MOSFET OptiMOSTM5Power-Transistor,25V PG-TTFN-9-1 1 Features •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 2 3 4 9 8 7 6 5 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 5-8 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 0.65 mΩ ID 298 A Qoss 41 nC QG(0V..4.5V) 29 nC Gate Pin 9 Source Pin 1-4 Type/OrderingCode Package Marking RelatedLinks IQE006NE2LM5CG PG-TTFN-9-1 006E2C5 - Final Data Sheet 1 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 298 188 41 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TA=25°C, RTHJA=60°C/W2) - 1192 A TA=25°C - - 140 mJ ID=20A,RGS=25Ω VGS -16 - 16 V - Power dissipation Ptot - - 89 2.1 W TC=25°C TA=25°C,RTHJA=60°C/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm² cooling area Values Min. Typ. Max. RthJC - - 1.4 °C/W - RthJA - - 60 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.6 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=16V,VDS=0V Drain-source on-state resistance RDS(on) - 0.50 0.65 0.65 0.80 mΩ VGS=10V,ID=20A VGS=4.5V,ID=20A Gate resistance1) RG - 0.7 1.2 Ω - Transconductance gfs - 220 - S |VDS|≥2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 25 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 4100 5453 pF VGS=0V,VDS=12V,f=1MHz Coss - 1700 2261 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 130 195 pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 5.3 - ns VDD=12V,VGS=4.5V,ID=20A, RG,ext=1.6Ω Rise time tr - 2.6 - ns VDD=12V,VGS=4.5V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 27.0 - ns VDD=12V,VGS=4.5V,ID=20A, RG,ext=1.6Ω Fall time tf - 5.3 - ns VDD=12V,VGS=4.5V,ID=20A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 9.2 - nC VDD=12V,ID=20A,VGS=0to4.5V Qg(th) - 5.8 - nC VDD=12V,ID=20A,VGS=0to4.5V Gate to drain charge Qgd - 5.6 8.4 nC VDD=12V,ID=20A,VGS=0to4.5V Switching charge Qsw - 9.0 - nC VDD=12V,ID=20A,VGS=0to4.5V Gate charge total Qg - 28.5 37.9 nC VDD=12V,ID=20A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.2 - V VDD=12V,ID=20A,VGS=0to4.5V Gate charge total1) Qg - 61.7 82.1 nC VDD=12V,ID=20A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 60.4 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 41.3 - nC VDD=12V,VGS=0V 1) 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 83 A TC=25°C - 1192 A TC=25°C - 0.75 1 V VGS=0V,IF=20A,Tj=25°C - 25 - nC VR=12V,IF=20A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 100 350 300 80 250 60 ID[A] Ptot[W] 200 150 40 100 20 50 0 0 20 40 60 80 100 120 140 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 103 1 µs 10 µs 10 ms 102 100 ZthJC[K/W] ID[A] 100 µs 101 1 ms 0 10-1 DC 10 10-1 10-2 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1200 1.50 4V 3.5 V 4.5 V 1000 3V 2.8 V 1.25 5V 10 V 1.00 600 3V RDS(on)[mΩ] ID[A] 800 400 3.5 V 0.75 4V 4.5 V 5V 0.50 10 V 2.8 V 200 0 0.25 0.0 0.5 1.0 1.5 2.0 2.5 0.00 3.0 0 100 200 300 VDS[V] 400 ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1200 1.50 1000 1.25 800 1.00 RDS(on)[mΩ] ID[A] 500 600 ID[A] 600 150 °C 0.75 400 0.50 200 0.25 25 °C 150 °C 25 °C 0 0 1 2 3 4 5 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.00 RDS(on)=f(VGS),ID=20A;parameter:Tj 7 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG Diagram10:Typ.gatethresholdvoltage 1.6 2.00 1.4 1.75 1.2 1.50 1.0 1.25 2500 µA VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Normalizeddrain-sourceonresistance 0.8 1.00 0.6 0.75 0.4 0.50 0.2 0.25 0.0 -80 -40 0 40 80 120 0.00 -80 160 250 µA -40 0 Tj[°C] 40 80 120 160 Tj[°C] RDS(on)=f(Tj),ID=20A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 104 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss Coss 103 IF[A] C[pF] 103 102 102 Crss 101 0 5 10 15 20 25 101 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 5V 12 V 20 V 8 VGS[V] IAV[A] 6 25 °C 101 100 °C 4 2 125 °C 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 70 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 28 27 VBR(DSS)[V] 26 25 24 23 -80 -40 0 40 80 120 160 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG 5PackageOutlines DIMENSION A A1 b b1 c D D1 D2 E E1 e e1 L L1 L2 L3 L4 MILLIMETERS MIN. MAX. 1.10 0.05 0.20 0.40 0.32 0.52 0.20 3.30 2.31 2.51 1.58 1.78 3.30 1.50 1.70 0.65 0.395 0.35 0.55 0.10 0.30 0.40 0.60 1.285 1.485 0.73 0.93 DOCUMENT NO. Z8B00192161 REVISION 03 SCALE 10:1 0 2mm 1 EUROPEAN PROJECTION ISSUE DATE 08.11.2019 Figure1OutlinePG-TTFN-9-1,dimensionsinmm Final Data Sheet 10 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG Pin1 Marking 8 4 3.6 All dimensions are in units mm The drawing is in compliance with ISO 128-30, Projection Method 1 [ 3.6 12 ] 0.3 1.2 Figure2OutlineTape(PG-TTFN-9-1),dimensionsinmm Final Data Sheet 11 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG 1.629 0.35 8x 0.595 0.975 0.3 4x 1.06 2x 0.22 2x 0.42 2x 1.6 0.7 0.65 6x 0.475 0.65 6x Pin 1 1.35 1.15 copper 0.38 4x 0.15 0.57 4x 0.965 0.155 1.59 0.395 0.5 0.4 2x 1.235 1.675 1.2 0.395 0.985 0.45 1.1 0.45 0.8 0.45 1.059 0.3 6x 1.1 0.4 4x 0.15 0.3 4x 1.1 4x 0.055 2x 0.975 solder mask 0.365 0.615 stencil apertures All dimensions are in units mm Figure3OutlineBoardpad(PG-TTFN-9-1),dimensionsinmm Final Data Sheet 12 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG RevisionHistory IQE006NE2LM5CG Revision:2020-03-16,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-12-06 Release of final version 2.1 2020-03-16 Update footnotes and marking Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2020-03-16