IR11662SPBF

IR11662S ADVANCED SMARTRECTIFIERTM CONTROL IC Product Summary Features                Secondary side high speed SR controller DCM, CrCM flyback and Resonant half-bridge topologies 200 V proprietary IC technology Max 500 KHz switching frequency Anti-bounce logic and UVLO protection 4A peak turn off drive current Micropower start-up & ultra low quiescent current 10.7 V gate drive clamp 50ns turn-off propagation delay Vcc range from 11.3 V to 20 V Direct sensing of MOSFET drain voltage Enable function synchronized with MOSFET VDS transition Cycle by Cycle MOT Check Circuit prevents multiple false trigger GATE pulses Lead-free Compatible with 0.3 W Standby, Energy Star, CECP, etc. Topology Flyback, Resonant Half-bridge VD 200 V VOUT 10.7 V Clamped Io+ & I o- (typ.) +1 A & -4 A Turn on Propagation Delay (typ.) 60 ns Turn off Propagation Delay (typ.) 50 ns Package Options 8-Lead SOIC Typical Applications  LCD & PDP TV, Telecom SMPS, adapters, ATX SMPS, Server SMPS AC-DC Ordering Information Standard Pack Base Part Number IR11662S 1 www.irf.com Package Type SOIC8N Complete Part Number Form Quantity Tube/Bulk 95 IR11662SPBF Tape and Reel 2500 IR11662STRPBF © 2013 International Rectifier Nov 6, 2013 IR11662S Typical Connection Diagram Vin Rs Rdc XFM Cdc U1 1 Ci 2 3 RMOT 4 VCC VGATE OVT GND MOT VS EN VD IR11662S IR11671 Rtn 2 www.irf.com 8 LOAD Cs 7 6 Co 5 Rg Q1 © 2013 International Rectifier Nov 6, 2013 IR11662S Table of Contents Page Ordering Information 1 Description 4 Absolute Maximum Ratings 5 Electrical Characteristics 6 Functional Block Diagram 8 Input / Output Pin Equivalent Circuit Diagram 9 Lead Definitions 10 Lead Assignments 10 Detailed Pin Description 11 Application Information and Additional Details 12 Package Details 23 Tape and Reel Details 24 Part Marking Information 25 Qualification Information 26 3 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR11662S Description IR11662 is a smart secondary-side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback and resonant half-bridge converters. The IC can control one or more paralleled NMOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. The cycle-by-cycle MOT protection circuit can automatically detect no load condition and turn off gate driver output to avoid negative current flowing through the MOSFETs. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in all operating modes. 4 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR11662S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Parameters Supply Voltage Enable Voltage Cont. Drain Sense Voltage Pulse Drain Sense Voltage Source Sense Voltage Gate Voltage Operating Junction Temperature Storage Temperature Thermal Resistance Package Power Dissipation Switching Frequency Symbol VCC VEN VD VD VS VGATE TJ TS R PD fsw Min. -0.3 -0.3 -1 -5 -3 -0.3 -40 -55 Max. 20 20 200 200 20 20 150 150 128 970 500 Units V V V V V V °C °C °C/W mW kHz Remarks VCC=20V, Gate off SOIC-8 SOIC-8, TAMB=25°C Recommended Operating Conditions For proper operation the device should be used within the recommended conditions. Symbol VCC VD TJ Fsw † Definition Supply voltage Drain Sense Voltage Junction Temperature Switching Frequency Min. 11.4 † -3 -25 --- Max. 18 200 125 500 Units Min. 5 Max. 75 Units k V °C kHz VD -3V negative spike width ≤100ns Recommended Component Values Symbol RMOT 5 Component MOT pin resistor value www.irf.com © 2013 International Rectifier Nov 6, 2013 IR11662S Electrical Characteristics VCC=15 V and TA = 25 °C unless otherwise specified. The output voltage and current (V O and IO) parameters are referenced to GND (pin7). Supply Section Parameters Supply Voltage Operating Range VCC Turn On Threshold VCC Turn Off Threshold (Under Voltage Lock Out) VCC Turn On/Off Hysteresis Operating Current Symbol Min. VCC 11.4 VCC ON 9.8 10.55 11.3 VCC UVLO 8.4 9 9.7 Start-up Current Max. 18 VCC HYST 8.5 10 50 65 IQCC 1.8 2.2 ICC START 100 200 I SLEEP 150 200 Enable Voltage High VENHI 2.15 2.70 3.2 Enable Voltage Low VENLO 1.2 1.6 2.0 REN Comparator Section Parameters Symbol Turn-off Threshold VTH1 Turn-on Threshold Hysteresis VTH2 Input Bias Current Input Bias Current 1.5 Min. -7 -15 -23 -150 Typ. -3.5 -10.5 -19 One-Shot Section Parameters Blanking pulse duration Reset Threshold Max. 0 -7 -15 -50 55 1 7.5 IIBIAS2 30 100 CLOAD = 1nF, fSW = 400kHz mA µA CLOAD = 10nF, fSW = 400kHz VCC=VCC ON - 0.1V VEN=0V, VCC =15V V GBD Units mV µA 2 mV 2 V Remarks OVT = 0V, VS=0V OVT floating, VS=0V OVT = VCC, VS=0V VD = -50mV VD = 200V GBD VCM -0.15 Symbol tBLANK Min. Typ. Max. Units 8 15 2.5 5.4 40 24 µs Min. 180 Typ. 240 Max. 300 Units ns Remarks RMOT =5kΩ, VCC=12V 2.25 3 3.75 µs RMOT =75kΩ, VCC=12V VTH3 Hysteresis GBD MΩ VHYST IIBIAS1 VOFFSET Comparator Input Offset Input CM Voltage Range Remarks 1.55 Sleep Current Enable Pull-up Resistance Units V ICC Quiescent Current Typ. VHYST3 V mV Remarks VCC=10V – GBD VCC=20V – GBD VCC=10V – GBD Minimum On Time Section Parameters Minimum on time 6 www.irf.com Symbol TOnmin © 2013 International Rectifier Nov 6, 2013 IR11662S Electrical Characteristics VCC=15 V and TA = 25 °C unless otherwise specified. The output voltage and current (V O and IO) parameters are referenced to GND (pin7). Gate Driver Section Parameters Gate Low Voltage Gate High Voltage Rise Time Fall Time Turn on Propagation Delay Turn off Propagation Delay Pull up Resistance Pull down Resistance Output Peak Current (source) Output Peak Current (sink) 7 www.irf.com Symbol VGLO VGTH tr1 tr2 tf1 tf2 tDon tDoff rup rdown IO source IO sink Min. 9.0 Typ. 0.3 10.7 21 181 10 44 60 50 5 1.2 1 4 © 2013 International Rectifier Max. 0.5 12.5 Units V ns 95 75 Ω A Remarks IGATE = 200mA VCC=12V-18V (internally clamped) CLOAD = 1nF, VCC=12V CLOAD = 10nF, VCC=12V CLOAD = 1nF, VCC=12V CLOAD = 10nF, VCC=12V VDS to VGATE -100mV overdrive VDS to VGATE -100mV overdrive IGATE = 1A – GBD IGATE = -200mA CLOAD = 10nF – GBD Nov 6, 2013 IR11662S Functional Block Diagram MOT VCC VCC UVLO & REGULATOR EN Cycle by Cycle MOT Check Circuit VCC VD Min ON Time VTH1 RESET VS VGATE DRIVER GND OVT Min OFF Time Vgate RESET VTH3 VTH2 8 www.irf.com © 2013 International Rectifier VTH1 VTH3 VDS Nov 6, 2013 IR11662S I/O Pin Equivalent Circuit Diagram VCC VCC ESD Diode MOT OVT ESD Diode EN RESD RESD ESD Diode ESD Diode GND GND VCC VD ESD Diode RESD ESD Diode GATE 200V Diode GND 9 www.irf.com ESD Diode GND © 2013 International Rectifier Nov 6, 2013 IR11662S Lead Definitions PIN# 1 2 3 4 5 6 7 8 Symbol VCC OVT MOT EN VD VS GND VGATE Description Supply Voltage Offset Voltage Trimming Minimum On Time Enable FET Drain Sensing FET Source Sensing Ground Gate Drive Output 10 www.irf.com 1 VCC 2 OVT 3 MOT 4 EN © 2013 International Rectifier IR11662S Lead Assignments VGATE 8 GND 7 VS 6 VD 5 Nov 6, 2013 IR11662S Detailed Pin Description VCC: Power Supply This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC. To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as close as possible to the IR11662. This pin is internally clamped. OVT: Offset Voltage Trimming The OVT pin will program the amount of input offset voltage for the turn-off threshold VTH1. The pin can be optionally tied to ground, to VCC or left floating, to select 3 ranges of input offset trimming. This programming feature allows for accommodating different R Dson MOSFETs. MOT: Minimum On Time The MOT programming pin controls the amount of minimum on time. Once VTH2 is crossed for the first time, the gate signal will become active and turn on the power FET. Spurious ringings and oscillations can trigger the input comparator off. The MOT blanks the input comparator keeping the FET on for a minimum time. The MOT is programmed between 200ns and 3us (typ.) by using a resistor referenced to COM. EN: Enable This pin is used to activate the IC “sleep” mode by pulling the voltage level below 1.6V (typ). In sleep mode the IC will consume a minimum amount of current. All switching functions will be disabled and the gate will be inactive. The EN pin voltage cannot linger between the Enable low and Enable high thresholds. The pin is intended to operate as a switch with the pin voltage either above or below the threshold range. The Enable control pin (EN) is not intended to operate at high frequency. For proper operation, EN positive pulse width needs to be longer than 20µs, EN negative pulse width needs to be longer than 10µs. Please refer to Figure 12B for definition the definition of EN pulse width. VD: Drain Voltage Sense VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must be taken in properly routing the connection to the power MOSFET drain. Additional filtering and or current limiting on this pin are not recommended as it would limit switching performance of the IC. VS: Source Voltage Sense VS is the differential sense pin for the power MOSFET Source. This pin must not be connected directly to the power ground pin (7) but must be used to create a Kelvin contact as close as possible to the power MOSFET source pin. GND: Ground This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to this point. VGATE: Gate Drive Output This is the gate drive output of the IC. Drive voltage is internally limited and provides 1A peak source and 4A peak sink capability. Although this pin can be directly connected to the power MOSFET gate, the use of minimal gate resistor is recommended, especially when putting multiple FETs in parallel. Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance. 11 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR11662S Application Information and Additional Details State Diagram POWER ON Gate Inactive UVLO MODE VCC < VCCon Gate Inactive ICC max = 200uA VCC > VCCon, ENABLE HIGH & VDS>VTH3 NORMAL VCC < VCCuvlo or ENABLE LOW Gate Active Gate PW ≥ MOT Cycle by Cycle MOT Check Enabled VDS>VTH1 @ MOT VDSVTH1 at the end of MOT Disable the next gate output Figure 9: MOT Protection Mode 17 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR11662S Synchronized Enable Function Sync Enable function guarantees the VGATE always starts switching at the beginning of a switching cycle. This function works in both flyback and resonant half-bridge topologies. Figure 10 is an example in resonant half-bridge converter. VGATE VDS UVLO & EN Idrain Vth3 IC activated in the middle of a VD>Vth3, Gate conduction cycle, VGATE stays low. activated Vgate has output from the next cycle Figure 10: Synchronized Enable Function (resonant half-bridge) General Timing Waveform VCC VCC ON VCC UVLO t UVLO NORMAL UVLO Figure 11: Vcc UVLO VTH1 VDS VTH2 t Don t Doff VGate 90% 50% 10% t rise tfall Figure 12A: Timing waveform 18 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR11662S VEN VENHI VENLO EN positive pulse width EN negative pulse width Figure 12B: Enable timing waveform 19 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR11662S 11 V VCC UVLO Thresholds ISUPPLY (mA) 10 1 0.1 10 V 5V 10 V 15 V Supply voltage 8V -50 °C 20 V Figure 13: Supply Current vs. Supply Voltage ICC Supply Current (mA) 8.5 1.5 1.0 -50 °C 0 °C 50 °C 100 °C 150 °C Temperature Figure 15: Icc Quiescent Current vs. Temperature www.irf.com © 2013 International Rectifier 0 °C 50 °C 100 °C Temperature 150 °C Figure 14: Undervoltage Lockout vs. Temperature IQCC 2.0 ICC Supply Current (mA) VCC ON VCC UVLO 0.01 20 9V Icc @400KHz, CLOAD=1nF 8.0 7.5 -50 °C 0 °C 50 °C 100 °C 150 °C Temperature Figure 16: Icc Supply Currrent @1nF Load vs. Temperature Nov 6, 2013 IR11662S 0.0 0.0 -10.0 -50.0 VTH2 Thresholds (mV) VTH1 Threshold (mV) -5.0 -15.0 -20.0 OVT=GND OVT=Floating OVT=VCC -25.0 -30.0 -50 °C -100.0 -150.0 -50 °C 0 °C 50 °C 100 °C Temperature 0 °C 150 °C 50 °C 100 °C 150 °C Temperature Figure 17: VTH1 vs. Temperature Figure 18: VTH2 vs. Temperature -6.0 100.0 VTH1 Threshold (mV) Comparator Hysteresis VHYST (mV) VS=-150mV 75.0 50.0 -50 °C 0 °C 50 °C 100 °C 150 °C Temperature Figure 19: Comparator Hysteresis vs. Temperature 21 www.irf.com © 2013 International Rectifier VS=0V -9.0 VS=+2V -12.0 -15.0 -50 °C 0 °C 50 °C Temperature 100 °C 150 °C Figure 20: VTH1 vs. Temperature at Common Mode (OVT=Floating) Nov 6, 2013 IR11662S 4 us -50.0 Minimum On Time (us) VTH2 Threshold (mV) 3 us -100.0 VS=-150mV VS=0V VS=+2V -150.0 -50 °C 0 °C 50 °C Temperature 100 °C 2 us RMOT=5k RMOT=75k 1 us 0 us -50 °C 150 °C 0 °C 50 °C 100 °C Temperature 150 °C Figure 22: MOT vs Temperature Figure 21: VTH2 vs. Temperature at Common Mode 75 ns 3.0 V 70 ns Turn-on Propagation Delay Propagation Delay Enable Thresholds Turn-off Propagation Delay 2.5 V VEN HI 2.0 V VEN LO 1.5 V 65 ns 60 ns 55 ns 50 ns 45 ns 40 ns 1.0 V -50 °C 0 °C 50 °C Temperature 100 °C 150 °C Figure 23: Enable Threshold vs. Temperature 22 www.irf.com © 2013 International Rectifier 35 ns -50 °C 0 °C 50 °C 100 °C 150 °C Temperature Figure 24: Turn-on and Turn-off Propagation Delay vs. Temperature Nov 6, 2013 IR11662S Package Details: SOIC8N 23 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR11662S Tape and Reel Details: SOIC8N LOADED TAPE FEED DIRECTION A B H D F C NOTE : CONTROLLING DIM ENSION IN M M E G CARRIER TAPE DIMENSION FOR Metric Code Min Max A 7.90 8.10 B 3.90 4.10 C 11.70 12.30 D 5.45 5.55 E 6.30 6.50 F 5.10 5.30 G 1.50 n/a H 1.50 1.60 8SOICN Imperial Min Max 0.311 0.318 0.153 0.161 0.46 0.484 0.214 0.218 0.248 0.255 0.200 0.208 0.059 n/a 0.059 0.062 F D C B A E G H REEL DIMENSIONS FOR 8SOICN Metric Code Min Max A 329.60 330.25 B 20.95 21.45 C 12.80 13.20 D 1.95 2.45 E 98.00 102.00 F n/a 18.40 G 14.50 17.10 H 12.40 14.40 24 www.irf.com © 2013 International Rectifier Imperial Min Max 12.976 13.001 0.824 0.844 0.503 0.519 0.767 0.096 3.858 4.015 n/a 0.724 0.570 0.673 0.488 0.566 Nov 6, 2013 IR11662S Part Marking Information S11662 Part number YWW ? Date code Pin 1 Identifier C XXXX ? MARKING CODE P Lead Free Released Non-Lead Free Released 25 www.irf.com IR logo © 2013 International Rectifier Lot Code (Prod mode – 4 digit SPN code) Assembly site code Per SCOP 200-002 Nov 6, 2013 IR11662S Qualification Information† †† Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model IC Latch-Up Test RoHS Compliant Industrial Comments: This family of ICs has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level. ††† MSL2 260°C (per IPC/JEDEC J-STD-020) Class B (per JEDEC standard JESD22-A115) Class 1C (1500V) (per EIA/JEDEC standard EIA/JESD22-A114) Class I, Level A (per JESD78) Yes † †† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. ††† Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no responsibility for the consequences of the use of this information. International Rectifier assumes no responsibility for any infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any patent or patent rights of International Rectifier. The specifications mentioned in this document are subject to change without notice. This document supersedes and replaces all information previously supplied. For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 26 www.irf.com © 2013 International Rectifier Nov 6, 2013