IR1166SPBF

IR1166S SMARTRECTIFIERTM CONTROL IC Features • Secondary side high speed SR controller • DCM, CrCM and CCM flyback topologies • 200 V proprietary IC technology • Max 500 KHz switching frequency • Anti-bounce logic and UVLO protection • 4 A peak turn off drive current • Micropower start-up & ultra low quiescent current • 10.7 V gate drive clamp • 50 ns turn-off propagation delay • Vcc range from 11.3 V to 20 V • Direct sensing of MOSFET drain voltage • Minimal component count • Simple design • Lead-free • Compatible with 1 W Standby, Energy Star, CECP, etc. Product Summary Topology Flyback VD 200 V VOUT 10.7 V Io+ & I o- (typ.) +1 A & -4 A Turn on Propagation Delay (typ.) 52 ns Turn off Propagation Delay (typ.) 35 ns Package Options 8-Lead SOIC Typical Applications • LCD & PDP TV, Telecom SMPS, AC-DC adapters, ATX SMPS, Server SMPS Ordering Information Standard Pack Base Part Number IR1166S 1 www.irf.com Package Type SOIC8N Complete Part Number Form Quantity Tape and Reel 2500 © 2013 International Rectifier IR1166STRPBF Nov 6, 2013 IR1166S Typical Connection Diagram Vin Rs Rdc XFM Cdc U1 1 Ci 2 3 RMOT 4 VCC VGATE OVT GND MOT VS EN VD IR1166S IR11671 Rtn 2 www.irf.com 8 LOAD Cs 7 6 Co 5 Rg Q1 © 2013 International Rectifier Nov 6, 2013 IR1166S Table of Contents Page Ordering Information 1 Description 4 Absolute Maximum Ratings 5 Electrical Characteristics 6 Functional Block Diagram 8 Lead Definitions 9 Lead Assignments 9 Detailed Pin Description 10 Application Information and Additional Details 11 Package Details 22 Tape and Reel Details 23 Part Marking Information 24 Qualification Information 25 3 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S Description IR1166S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback converters. The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in continuous, discontinuous and critical current mode operation and both fixed and variable frequency modes. 4 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S Absolute Maximum Ratings Stress beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions are not implied. All voltages are absolute voltages referenced to GND. Thermal resistance and power dissipation are measured under board mounted and still air conditions. Parameters Supply Voltage Enable Voltage Cont. Drain Sense Voltage Pulse Drain Sense Voltage Source Sense Voltage Gate Voltage Operating Junction Temperature Storage Temperature Thermal Resistance Package Power Dissipation ESD Protection Switching Frequency † Symbol Min. Max. VCC VEN VD VD VS VGATE TJ TS RΘJA PD VESD fsw -0.3 -0.3 -3 -5 -3 -0.3 -40 -55 20 20 200 200 20 20 150 150 128 970 1.5 500 Remarks Units V VCC=20V, Gate off °C °C/W mW kV kHz SOIC-8 SOIC-8, TAMB=25°C † Human Body Model Per EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor). 5 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S Electrical Characteristics The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range T J from – 25° C to 125°C. Typical values represent the median values, which are related to 25°C. If not otherwise stated, a supply voltage of VCC =15V is assumed for test condition. Supply Section Parameters Supply Voltage Operating Range VCC Turn On Threshold Symbol VCC Min. 11.4 Typ. Max. 18 VCC ON 9.8 10.6 11.3 VCC Turn Off Threshold (Under Voltage Lock Out) VCC UVLO 8.4 9 9.7 VCC Turn On/Off Hysteresis VCC HYST 1.4 1.57 1.7 8 10 47 65 Operating Current Quiescent Current Start-up Current ICC IQCC 1.7 2.2 ICC START 92 200 Sleep Current ISLEEP 145 200 Enable Voltage High VENHI 2.15 2.71 3.2 Enable Voltage Low VENLO 1.2 1.6 2 Enable Pull-up Resistance Comparator Section Parameters Turn-off Threshold Turn-on Threshold Hysteresis Input Bias Current Comparator Input Offset Input CM Voltage Range One-Shot Section Parameters Blanking pulse duration Reset Threshold Hysteresis 6 www.irf.com REN Symbol 1.5 Typ. -3 VTH1 -15 -10.3 -7 -18.7 VTH2 -23 -150 -15 -50 Max. 0 VHYST 63 IIBIAS1 1 7.5 IIBIAS2 23 100 VOFFSET VCM Symbol tBLANK -0.15 Min. 9 Typ. 15 V CLOAD=1nF, fsw = 400kHz mA μA CLOAD=10nF, fsw = 400kHz VCC=VCC ON - 0.1V VEN=0V, VCC =15V V MΩ Min. -7 Remarks Units GBD Units Remarks OVT = 0V, VS=0V mV μA 2 2 mV V Max. 25 Units μs OVT floating, VS=0V OVT = VCC, VS=0V VD = -50mV VD = 200V GBD Remarks VTH3 2.5 5.4 V VCC=10V - GBD VCC=20V - GBD VHYST3 40 mV VCC=10V - GBD © 2013 International Rectifier Nov 6, 2013 IR1166S Electrical Characteristics The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range T J from – 25° C to 125°C. Typical values represent the median values, which are related to 25°C. If not otherwise stated, a supply voltage of VCC =15V is assumed for test condition. Minimum On Time Section Parameters Symbol Minimum on time TONmin Gate Driver Section Parameters Gate Low Voltage Gate High Voltage Rise Time Fall Time Turn on Propagation Delay Turn off Propagation Delay Pull up Resistance Pull down Resistance Output Peak Current (source) Output Peak Current (sink) 7 www.irf.com Symbol VGLO VGTH tr1 tr2 tf1 tf2 tDon tDoff rup rdown IO source IO sink Min. 190 Typ. 251 Max. 290 Units ns Remarks RMOT =5kVCC=12V 2.4 3 3.6 µs RMOT =75kVCC=12V Min. Typ. 0.2 10.7 21 181 10 44 52 35 5 1.2 1 4 Max. 0.5 12.5 Units 9 © 2013 International Rectifier V ns 80 65 Remarks IGATE = 200mA VCC=12V-18V (internally clamped) CLOAD = 1nF, VCC=12V CLOAD = 10nF, VCC=12V CLOAD = 1nF, VCC=12V CLOAD = 10nF, VCC=12V VDS to VGATE -100mV overdrive Ω IGATE = 1A - GBD IGATE = -200mA A CLOAD = 10nF - GBD Nov 6, 2013 IR1166S Functional Block Diagram MOT VCC VCC UVLO & REGULATOR ENA VCC VD Min ON Time VTH1 RESET VS VGATE DRIVER COM OVT Min OFF Time Vgate RESET VTH3 VTH2 8 www.irf.com © 2013 International Rectifier VTH1 VTH3 VDS Nov 6, 2013 IR1166S Lead Definitions PIN# 1 2 3 4 5 6 7 8 Symbol VCC OVT MOT EN VD VS GND GATE Description Supply Voltage Offset Voltage Trimming Minimum On Time Enable FET Drain Sensing FET Source Sensing Ground Gate Drive Output 9 www.irf.com 1 VCC 2 OVT 3 MOT 4 EN © 2013 International Rectifier IR1166S Lead Assignments VGATE 8 GND 7 VS 6 VD 5 Nov 6, 2013 IR1166S Detailed Pin Description VCC: Power Supply This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC. To prevent noise problems, a bypass ceramic capacitor connected to Vcc and GND should be placed as close as possible to the IR1166S. This pin is internally clamped. OVT: Offset Voltage Trimming The OVT pin will program the amount of input offset voltage for the turn-off threshold VTH1. The pin can be optionally tied to ground, to VCC or left floating, to select 3 ranges of input offset trimming. This programming feature allows for accommodating different R DSon MOSFETs. MOT: Minimum On Time The MOT programming pin controls the amount of minimum on time. Once V TH2 is crossed for the first time, the gate signal will become active and turn on the power FET. Spurious ringings and oscillations can trigger the input comparator off. The MOT blanks the input comparator keeping the FET on for a minimum time. The MOT is programmed between 200ns and 3µs (typ.) by using a resistor referenced to GND. EN: Enable This pin is used to activate the IC "sleep" mode by pulling the voltage level below 2.5V (typ). In sleep mode the IC will consume a minimum amount of current. However all switching functions will be disabled and the gate will be inactive. The EN pin voltage cannot linger between the Enable low and Enable high thresholds. The pin is intended to operate as a switch with the pin voltage either above or below the threshold range. The Enable control pin (EN) is not intended to operate at high frequency. For proper operation, EN positive pulse width needs to be longer than 20µs, EN negative pulse width needs to be longer than 10µs. Please refer to Figure 22B for the definition of EN pulse switch. VD: Drain Voltage Sense VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must be taken in properly routing the connection to the power MOSFET drain. Additional filtering and or current limiting on this pin is not recommended as it would limit switching performance of the IC. VS: Source Voltage Sense VS is the differential sense pin for the power MOSFET Source. This pin must not be connected directly to the power ground pin (7) but must be used to create a Kelvin contact as close as possible to the power MOSFET source pin. GND: Ground This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to this point. GATE: Gate Drive Output This is the gate drive output of the IC. Drive voltage is internally limited and provides 1A peak source and 4A peak sink capability. Although this pin can be directly connected to the power MOSFET gate, the use of minimal gate resistor is recommended, especially when putting multiple FETs in parallel. Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance. 10 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S Application Information and Additional Details State Diagram UVLO/Sleep Mode The IC remains in the UVLO condition until the voltage on the VCC pin exceeds the VCC turn on threshold voltage, V CC ON. During the time the IC remains in the UVLO state, the gate drive circuit is inactive and the IC draws a quiescent current of ICC START. The UVLO mode is accessible from any other state of operation whenever the IC supply voltage condition of VCC < VCC UVLO occurs. The sleep mode is initiated by pulling the EN pin below 2.5V (typ). In this mode the IC is essentially shut down and draws a very low quiescent supply current. Normal Mode The IC enters in normal operating mode once the UVLO voltage has been exceeded. At this point the gate driver is operating and the IC will draw a maximum of I CC from the supply voltage source. 11 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S General Description The IR1166 Smart Rectifier IC can emulate the operation of diode rectifier by properly driving a Synchronous Rectifier (SR) MOSFET. The direction of the rectified current is sensed by the input comparator using the power MOSFET R DSon as a shunt resistance and the GATE pin of the MOSFET is driven accordingly. Internal blanking logic is used to prevent spurious transitions and guarantee operation in continuous (CCM), discountinuous (DCM) and critical (CrCM) conduction mode. VGate VDS VTH2 VTH1 VTH3 Figure 1: Input comparator thresholds Flyback Application The modes of operation for a Flyback circuit differ mainly for the turn-off phase of the SR switch, while the turn-on phase of the secondary switch (which corresponds to the turn off of the primary side switch) is identical. Turn-on phase When the conduction phase of the SR FET is initiated, current will start flowing through its body diode, generating a negative VDS voltage across it. The body diode has generally a much higher voltage drop than the one caused by the MOSFET on resistance and therefore will trigger the turn-on threshold VTH2. At that point the IR1166 will drive the gate of MOSFET on which will in turn cause the conduction voltage V DS to drop down. This drop is usually accompanied by some amount of ringing, that can trigger the input comparator to turn off; hence, a Minimum On Time (MOT) blanking period is used that will maintain the power MOSFET on for a minimum amount of time. The programmed MOT will limit also the minimum duty cycle of the SR MOSFET and, as a consequence, the max duty cycle of the primary side switch. DCM/CrCM Turn-off phase Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level where V DS will cross the turn-off threshold VTH1. This will happen differently depending on the mode of operation. In DCM the current will cross the threshold with a relatively low dI/dt. Once the threshold is crossed, the current will start flowing again through the body diode, causing the VDS voltage to jump negative. Depending on the amount of residual current, VDS may trigger once again the turn on threshold: for this reason VTH2 is blanked for a certain amount of time (TBLANK) after VTH1 has been triggered. The blanking time is internally set. As soon as V DS crosses the positive threshold VTH3 also the blanking time is terminated and the IC is ready for next conduction cycle. 12 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S IPRIM VPRIM T1 T3 T2 time ISEC VSEC time Figure 2: Primary and secondary currents and voltages for DCM mode IPRIM VPRIM T1 T2 time ISEC VSEC time Figure 3: Primary and secondary currents and voltages for CrCM mode CCM Turn-off phase In CCM mode the turn off transition is much steeper and dI/dt involved is much higher. The turn on phase is identical to DCM or CrCM and therefore won’t be repeated here. During the SR FET conduction phase the current will decay linearly, and so will VDS on the SR FET. Once the primary switch will start to turn back on, the SR FET current will rapidly decrease crossing V TH1 and turning the gate off. The turn off speed is critical to avoid cross conduction on the primary side and reduce switching losses. Also in this case a blanking period will be applied, but given the very fast nature of this transition, it will be reset as soon as VDS crosses VTH3. 13 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S IPRIM VPRIM T1 time T2 ISEC VSEC time Figure 4: Primary and secondary currents and voltages for CCM mode VTH3 ISEC VDS T1 T2 time VTH1 VTH2 Gate Drive time Blanking MOT time Figure 5: Secondary side CCM operation 14 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S VTH3 ISEC VDS T1 T2 time VTH1 VTH2 Gate Drive time Blanking MOT 10us blanking Figure 6: Secondary side DCM/CrCM operation 15 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S Figure 7: Supply Current vs. Supply Voltage Figure 9: VTH1 vs. Temperature 16 www.irf.com © 2013 International Rectifier Figure 8: Undervoltage Lockout vs. Temperature Figure 10: VTH2 vs. Tempature Nov 6, 2013 IR1166S Figure 11: Comparator Hysteresis vs. Temperature Figure 13: VTH2 vs. Temperature and Common Mode (OVT = GND) 17 www.irf.com © 2013 International Rectifier Figure 12: VTH1 vs. Temperature and Common Mode (OVT = Floating) Figure 14: Comparator Hysteresis vs. Temperature and Common Mode (OVT = GND) Nov 6, 2013 IR1166S Figure 15: MOT vs. Temperature Figure 17: Max. VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ = 125˚C, TIC = 85˚C, external RG = 1Ω, 1Ω HEXFET Gate Resistance Included 18 www.irf.com © 2013 International Rectifier Figure 16: Input Bias Current vs. VD Figure 18: Max. VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ = 125˚C, TIC = 85˚C, external RG = 2Ω, 1Ω HEXFET Gate Resistance Included Nov 6, 2013 IR1166S Figure 19: Max. VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ = 125˚C, TIC = 85˚C, external RG = 4Ω, 1Ω HEXFET Gate Resistance Included Figure 20: Max. VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ = 125˚C, TIC = 85˚C, external RG = 6Ω, 1Ω HEXFET Gate Resistance Included Figures 17 – 20 show the maximum allowable VCC voltage vs. maximum switching frequency for different loads which are calculated using the design methodology discussed in AN1087 19 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S Figure 21: VCC Under Voltage Lockout Figure 22A: Timing Diagrams 20 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S VEN VENHI VENLO EN positive pulse width EN negative pulse width Figure 22B: Enable Timing Waveform 21 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S Package Details: SOIC8N 22 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1166S Tape and Reel Details: SOIC8N LOADED TAPE FEED DIRECTION A B H D F C NOTE : CONTROLLING DIM ENSION IN M M E G CARRIER TAPE DIMENSION FOR Metric Code Min Max A 7.90 8.10 B 3.90 4.10 C 11.70 12.30 D 5.45 5.55 E 6.30 6.50 F 5.10 5.30 G 1.50 n/a H 1.50 1.60 8SOICN Imperial Min Max 0.311 0.318 0.153 0.161 0.46 0.484 0.214 0.218 0.248 0.255 0.200 0.208 0.059 n/a 0.059 0.062 F D C B A E G H REEL DIMENSIONS FOR 8SOICN Metric Code Min Max A 329.60 330.25 B 20.95 21.45 C 12.80 13.20 D 1.95 2.45 E 98.00 102.00 F n/a 18.40 G 14.50 17.10 H 12.40 14.40 23 www.irf.com © 2013 International Rectifier Imperial Min Max 12.976 13.001 0.824 0.844 0.503 0.519 0.767 0.096 3.858 4.015 n/a 0.724 0.570 0.673 0.488 0.566 Nov 6, 2013 IR1166S Part Marking Information IR1166S Part number YWW ? Date code Pin 1 Identifier C XXXX ? MARKING CODE P Lead Free Released Non-Lead Free Released 24 www.irf.com IR logo © 2013 International Rectifier Lot Code (Prod mode – 4 digit SPN code) Assembly site code Per SCOP 200-002 Nov 6, 2013 IR1166S Qualification Information† †† Industrial Comments: This family of ICs has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level. ††† MSL2 260°C (per IPC/JEDEC J-STD-020) Yes Qualification Level Moisture Sensitivity Level RoHS Compliant † †† ††† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no responsibility for the consequences of the use of this information. International Rectifier assumes no responsibility for any infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any patent or patent rights of International Rectifier. The specifications mentioned in this document are subject to change without notice. This document supersedes and replaces all information previously supplied. For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 25 www.irf.com © 2013 International Rectifier Nov 6, 2013