IR1166S
SMARTRECTIFIERTM CONTROL IC
Features
• Secondary side high speed SR controller
• DCM, CrCM and CCM flyback topologies
• 200 V proprietary IC technology
• Max 500 KHz switching frequency
• Anti-bounce logic and UVLO protection
• 4 A peak turn off drive current
• Micropower start-up & ultra low quiescent current
• 10.7 V gate drive clamp
• 50 ns turn-off propagation delay
• Vcc range from 11.3 V to 20 V
• Direct sensing of MOSFET drain voltage
• Minimal component count
• Simple design
• Lead-free
• Compatible with 1 W Standby, Energy Star, CECP, etc.
Product Summary
Topology
Flyback
VD
200 V
VOUT
10.7 V
Io+ & I o- (typ.)
+1 A & -4 A
Turn on Propagation
Delay (typ.)
52 ns
Turn off Propagation
Delay (typ.)
35 ns
Package Options
8-Lead SOIC
Typical Applications
• LCD & PDP TV, Telecom SMPS, AC-DC adapters,
ATX SMPS, Server SMPS
Ordering Information
Standard Pack
Base Part Number
IR1166S
1
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Package Type
SOIC8N
Complete Part Number
Form
Quantity
Tape and Reel
2500
© 2013 International Rectifier
IR1166STRPBF
Nov 6, 2013
IR1166S
Typical Connection Diagram
Vin
Rs
Rdc
XFM
Cdc
U1
1
Ci
2
3
RMOT
4
VCC
VGATE
OVT
GND
MOT
VS
EN
VD
IR1166S
IR11671
Rtn
2
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8
LOAD
Cs
7
6
Co
5
Rg
Q1
© 2013 International Rectifier
Nov 6, 2013
IR1166S
Table of Contents
Page
Ordering Information
1
Description
4
Absolute Maximum Ratings
5
Electrical Characteristics
6
Functional Block Diagram
8
Lead Definitions
9
Lead Assignments
9
Detailed Pin Description
10
Application Information and Additional Details
11
Package Details
22
Tape and Reel Details
23
Part Marking Information
24
Qualification Information
25
3
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© 2013 International Rectifier
Nov 6, 2013
IR1166S
Description
IR1166S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs used as synchronous
rectifiers in isolated Flyback converters. The IC can control one or more paralleled N-MOSFETs to emulate the
behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of
the current and turn the power switch on and off in proximity of the zero current transition. Ruggedness and noise
immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow
reliable operation in continuous, discontinuous and critical current mode operation and both fixed and variable
frequency modes.
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© 2013 International Rectifier
Nov 6, 2013
IR1166S
Absolute Maximum Ratings
Stress beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these conditions are not implied. All
voltages are absolute voltages referenced to GND. Thermal resistance and power dissipation are measured under
board mounted and still air conditions.
Parameters
Supply Voltage
Enable Voltage
Cont. Drain Sense Voltage
Pulse Drain Sense Voltage
Source Sense Voltage
Gate Voltage
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Package Power Dissipation
ESD Protection
Switching Frequency
†
Symbol
Min.
Max.
VCC
VEN
VD
VD
VS
VGATE
TJ
TS
RΘJA
PD
VESD
fsw
-0.3
-0.3
-3
-5
-3
-0.3
-40
-55
20
20
200
200
20
20
150
150
128
970
1.5
500
Remarks
Units
V
VCC=20V, Gate off
°C
°C/W
mW
kV
kHz
SOIC-8
SOIC-8, TAMB=25°C
†
Human Body Model
Per EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor).
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© 2013 International Rectifier
Nov 6, 2013
IR1166S
Electrical Characteristics
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and
junction temperature range T J from – 25° C to 125°C. Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC =15V is assumed for test condition.
Supply Section
Parameters
Supply Voltage Operating Range
VCC Turn On Threshold
Symbol
VCC
Min.
11.4
Typ.
Max.
18
VCC ON
9.8
10.6
11.3
VCC Turn Off Threshold
(Under Voltage Lock Out)
VCC UVLO
8.4
9
9.7
VCC Turn On/Off Hysteresis
VCC HYST
1.4
1.57
1.7
8
10
47
65
Operating Current
Quiescent Current
Start-up Current
ICC
IQCC
1.7
2.2
ICC START
92
200
Sleep Current
ISLEEP
145
200
Enable Voltage High
VENHI
2.15
2.71
3.2
Enable Voltage Low
VENLO
1.2
1.6
2
Enable Pull-up Resistance
Comparator Section
Parameters
Turn-off Threshold
Turn-on Threshold
Hysteresis
Input Bias Current
Comparator Input Offset
Input CM Voltage Range
One-Shot Section
Parameters
Blanking pulse duration
Reset Threshold
Hysteresis
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REN
Symbol
1.5
Typ.
-3
VTH1
-15
-10.3
-7
-18.7
VTH2
-23
-150
-15
-50
Max.
0
VHYST
63
IIBIAS1
1
7.5
IIBIAS2
23
100
VOFFSET
VCM
Symbol
tBLANK
-0.15
Min.
9
Typ.
15
V
CLOAD=1nF, fsw = 400kHz
mA
μA
CLOAD=10nF, fsw = 400kHz
VCC=VCC
ON
- 0.1V
VEN=0V, VCC =15V
V
MΩ
Min.
-7
Remarks
Units
GBD
Units
Remarks
OVT = 0V, VS=0V
mV
μA
2
2
mV
V
Max.
25
Units
μs
OVT floating, VS=0V
OVT = VCC, VS=0V
VD = -50mV
VD = 200V
GBD
Remarks
VTH3
2.5
5.4
V
VCC=10V - GBD
VCC=20V - GBD
VHYST3
40
mV
VCC=10V - GBD
© 2013 International Rectifier
Nov 6, 2013
IR1166S
Electrical Characteristics
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and
junction temperature range T J from – 25° C to 125°C. Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC =15V is assumed for test condition.
Minimum On Time Section
Parameters
Symbol
Minimum on time
TONmin
Gate Driver Section
Parameters
Gate Low Voltage
Gate High Voltage
Rise Time
Fall Time
Turn on Propagation Delay
Turn off Propagation Delay
Pull up Resistance
Pull down Resistance
Output Peak Current (source)
Output Peak Current (sink)
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Symbol
VGLO
VGTH
tr1
tr2
tf1
tf2
tDon
tDoff
rup
rdown
IO source
IO sink
Min.
190
Typ.
251
Max.
290
Units
ns
Remarks
RMOT =5kVCC=12V
2.4
3
3.6
µs
RMOT =75kVCC=12V
Min.
Typ.
0.2
10.7
21
181
10
44
52
35
5
1.2
1
4
Max.
0.5
12.5
Units
9
© 2013 International Rectifier
V
ns
80
65
Remarks
IGATE = 200mA
VCC=12V-18V (internally clamped)
CLOAD = 1nF, VCC=12V
CLOAD = 10nF, VCC=12V
CLOAD = 1nF, VCC=12V
CLOAD = 10nF, VCC=12V
VDS to VGATE -100mV overdrive
Ω
IGATE = 1A - GBD
IGATE = -200mA
A
CLOAD = 10nF - GBD
Nov 6, 2013
IR1166S
Functional Block Diagram
MOT
VCC
VCC
UVLO
&
REGULATOR
ENA
VCC
VD
Min ON Time
VTH1
RESET
VS
VGATE
DRIVER
COM
OVT
Min OFF Time
Vgate
RESET
VTH3
VTH2
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VTH1
VTH3
VDS
Nov 6, 2013
IR1166S
Lead Definitions
PIN#
1
2
3
4
5
6
7
8
Symbol
VCC
OVT
MOT
EN
VD
VS
GND
GATE
Description
Supply Voltage
Offset Voltage Trimming
Minimum On Time
Enable
FET Drain Sensing
FET Source Sensing
Ground
Gate Drive Output
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1
VCC
2
OVT
3
MOT
4
EN
© 2013 International Rectifier
IR1166S
Lead Assignments
VGATE
8
GND
7
VS
6
VD
5
Nov 6, 2013
IR1166S
Detailed Pin Description
VCC: Power Supply
This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn off the IC by
pulling this pin below the minimum turn off threshold voltage, without damage to the IC.
To prevent noise problems, a bypass ceramic capacitor connected to Vcc and GND should be placed as close as possible to
the IR1166S. This pin is internally clamped.
OVT: Offset Voltage Trimming
The OVT pin will program the amount of input offset voltage for the turn-off threshold VTH1.
The pin can be optionally tied to ground, to VCC or left floating, to select 3 ranges of input offset trimming.
This programming feature allows for accommodating different R DSon MOSFETs.
MOT: Minimum On Time
The MOT programming pin controls the amount of minimum on time. Once V TH2 is crossed for the first time, the gate signal will
become active and turn on the power FET. Spurious ringings and oscillations can trigger the input comparator off. The MOT
blanks the input comparator keeping the FET on for a minimum time.
The MOT is programmed between 200ns and 3µs (typ.) by using a resistor referenced to GND.
EN: Enable
This pin is used to activate the IC "sleep" mode by pulling the voltage level below 2.5V (typ). In sleep mode the IC will
consume a minimum amount of current. However all switching functions will be disabled and the gate will be inactive. The EN
pin voltage cannot linger between the Enable low and Enable high thresholds. The pin is intended to operate as a switch with
the pin voltage either above or below the threshold range. The Enable control pin (EN) is not intended to operate at high
frequency. For proper operation, EN positive pulse width needs to be longer than 20µs, EN negative pulse width needs to be
longer than 10µs.
Please refer to Figure 22B for the definition of EN pulse switch.
VD: Drain Voltage Sense
VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must be taken in
properly routing the connection to the power MOSFET drain.
Additional filtering and or current limiting on this pin is not recommended as it would limit switching performance of the IC.
VS: Source Voltage Sense
VS is the differential sense pin for the power MOSFET Source. This pin must not be connected directly to the power ground
pin (7) but must be used to create a Kelvin contact as close as possible to the power MOSFET source pin.
GND: Ground
This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to this point.
GATE: Gate Drive Output
This is the gate drive output of the IC. Drive voltage is internally limited and provides 1A peak source and 4A peak sink
capability. Although this pin can be directly connected to the power MOSFET gate, the use of minimal gate resistor is
recommended, especially when putting multiple FETs in parallel.
Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching
performance.
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© 2013 International Rectifier
Nov 6, 2013
IR1166S
Application Information and Additional Details
State Diagram
UVLO/Sleep Mode
The IC remains in the UVLO condition until the voltage on the VCC pin exceeds the VCC turn on threshold voltage, V CC
ON. During the time the IC remains in the UVLO state, the gate drive circuit is inactive and the IC draws a quiescent
current of ICC START. The UVLO mode is accessible from any other state of operation whenever the IC supply voltage
condition of VCC < VCC UVLO occurs.
The sleep mode is initiated by pulling the EN pin below 2.5V (typ). In this mode the IC is essentially shut down and
draws a very low quiescent supply current.
Normal Mode
The IC enters in normal operating mode once the UVLO voltage has been exceeded. At this point the gate driver is
operating and the IC will draw a maximum of I CC from the supply voltage source.
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Nov 6, 2013
IR1166S
General Description
The IR1166 Smart Rectifier IC can emulate the operation of diode rectifier by properly driving a Synchronous Rectifier (SR)
MOSFET. The direction of the rectified current is sensed by the input comparator using the power MOSFET R DSon as a shunt
resistance and the GATE pin of the MOSFET is driven accordingly. Internal blanking logic is used to prevent spurious
transitions and guarantee operation in continuous (CCM), discountinuous (DCM) and critical (CrCM) conduction mode.
VGate
VDS
VTH2
VTH1
VTH3
Figure 1: Input comparator thresholds
Flyback Application
The modes of operation for a Flyback circuit differ mainly for the turn-off phase of the SR switch, while the turn-on phase of the
secondary switch (which corresponds to the turn off of the primary side switch) is identical.
Turn-on phase
When the conduction phase of the SR FET is initiated, current will start flowing through its body diode, generating a negative
VDS voltage across it. The body diode has generally a much higher voltage drop than the one caused by the MOSFET on
resistance and therefore will trigger the turn-on threshold VTH2.
At that point the IR1166 will drive the gate of MOSFET on which will in turn cause the conduction voltage V DS to drop down.
This drop is usually accompanied by some amount of ringing, that can trigger the input comparator to turn off; hence, a
Minimum On Time (MOT) blanking period is used that will maintain the power MOSFET on for a minimum amount of time.
The programmed MOT will limit also the minimum duty cycle of the SR MOSFET and, as a consequence, the max duty cycle
of the primary side switch.
DCM/CrCM Turn-off phase
Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level where V DS will
cross the turn-off threshold VTH1. This will happen differently depending on the mode of operation.
In DCM the current will cross the threshold with a relatively low dI/dt. Once the threshold is crossed, the current will start
flowing again through the body diode, causing the VDS voltage to jump negative. Depending on the amount of residual current,
VDS may trigger once again the turn on threshold: for this reason VTH2 is blanked for a certain amount of time (TBLANK) after
VTH1 has been triggered.
The blanking time is internally set. As soon as V DS crosses the positive threshold VTH3 also the blanking time is terminated and
the IC is ready for next conduction cycle.
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Nov 6, 2013
IR1166S
IPRIM
VPRIM
T1
T3
T2
time
ISEC
VSEC
time
Figure 2: Primary and secondary currents and voltages for DCM mode
IPRIM
VPRIM
T1
T2
time
ISEC
VSEC
time
Figure 3: Primary and secondary currents and voltages for CrCM mode
CCM Turn-off phase
In CCM mode the turn off transition is much steeper and dI/dt involved is much higher. The turn on phase is identical to DCM
or CrCM and therefore won’t be repeated here.
During the SR FET conduction phase the current will decay linearly, and so will VDS on the SR FET.
Once the primary switch will start to turn back on, the SR FET current will rapidly decrease crossing V TH1 and turning the gate
off. The turn off speed is critical to avoid cross conduction on the primary side and reduce switching losses.
Also in this case a blanking period will be applied, but given the very fast nature of this transition, it will be reset as soon as
VDS crosses VTH3.
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Nov 6, 2013
IR1166S
IPRIM
VPRIM
T1
time
T2
ISEC
VSEC
time
Figure 4: Primary and secondary currents and voltages for CCM mode
VTH3
ISEC
VDS
T1
T2
time
VTH1
VTH2
Gate Drive
time
Blanking
MOT
time
Figure 5: Secondary side CCM operation
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Nov 6, 2013
IR1166S
VTH3
ISEC
VDS
T1
T2
time
VTH1
VTH2
Gate Drive
time
Blanking
MOT
10us blanking
Figure 6: Secondary side DCM/CrCM operation
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Nov 6, 2013
IR1166S
Figure 7: Supply Current vs. Supply Voltage
Figure 9: VTH1 vs. Temperature
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© 2013 International Rectifier
Figure 8: Undervoltage Lockout vs. Temperature
Figure 10: VTH2 vs. Tempature
Nov 6, 2013
IR1166S
Figure 11: Comparator Hysteresis vs. Temperature
Figure 13: VTH2 vs. Temperature and Common Mode
(OVT = GND)
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Figure 12: VTH1 vs. Temperature and Common Mode
(OVT = Floating)
Figure 14: Comparator Hysteresis vs. Temperature and
Common Mode (OVT = GND)
Nov 6, 2013
IR1166S
Figure 15: MOT vs. Temperature
Figure 17: Max. VCC Voltage vs. Synchronous Rectifier
Switching Freq, TJ = 125˚C, TIC = 85˚C, external RG =
1Ω, 1Ω HEXFET Gate Resistance Included
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Figure 16: Input Bias Current vs. VD
Figure 18: Max. VCC Voltage vs. Synchronous Rectifier
Switching Freq, TJ = 125˚C, TIC = 85˚C, external RG =
2Ω, 1Ω HEXFET Gate Resistance Included
Nov 6, 2013
IR1166S
Figure 19: Max. VCC Voltage vs. Synchronous Rectifier
Switching Freq, TJ = 125˚C, TIC = 85˚C, external RG =
4Ω, 1Ω HEXFET Gate Resistance Included
Figure 20: Max. VCC Voltage vs. Synchronous Rectifier
Switching Freq, TJ = 125˚C, TIC = 85˚C, external RG =
6Ω, 1Ω HEXFET Gate Resistance Included
Figures 17 – 20 show the maximum allowable VCC voltage vs. maximum switching frequency for different loads
which are calculated using the design methodology discussed in AN1087
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Nov 6, 2013
IR1166S
Figure 21: VCC Under Voltage Lockout
Figure 22A: Timing Diagrams
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Nov 6, 2013
IR1166S
VEN
VENHI
VENLO
EN positive pulse width
EN negative
pulse width
Figure 22B: Enable Timing Waveform
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Nov 6, 2013
IR1166S
Package Details: SOIC8N
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© 2013 International Rectifier
Nov 6, 2013
IR1166S
Tape and Reel Details: SOIC8N
LOADED TAPE FEED DIRECTION
A
B
H
D
F
C
NOTE : CONTROLLING
DIM ENSION IN M M
E
G
CARRIER TAPE DIMENSION FOR
Metric
Code
Min
Max
A
7.90
8.10
B
3.90
4.10
C
11.70
12.30
D
5.45
5.55
E
6.30
6.50
F
5.10
5.30
G
1.50
n/a
H
1.50
1.60
8SOICN
Imperial
Min
Max
0.311
0.318
0.153
0.161
0.46
0.484
0.214
0.218
0.248
0.255
0.200
0.208
0.059
n/a
0.059
0.062
F
D
C
B
A
E
G
H
REEL DIMENSIONS FOR 8SOICN
Metric
Code
Min
Max
A
329.60
330.25
B
20.95
21.45
C
12.80
13.20
D
1.95
2.45
E
98.00
102.00
F
n/a
18.40
G
14.50
17.10
H
12.40
14.40
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© 2013 International Rectifier
Imperial
Min
Max
12.976
13.001
0.824
0.844
0.503
0.519
0.767
0.096
3.858
4.015
n/a
0.724
0.570
0.673
0.488
0.566
Nov 6, 2013
IR1166S
Part Marking Information
IR1166S
Part number
YWW ?
Date code
Pin 1
Identifier
C XXXX
?
MARKING CODE
P
Lead Free Released
Non-Lead Free Released
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IR logo
© 2013 International Rectifier
Lot Code
(Prod mode –
4 digit SPN code)
Assembly site code
Per SCOP 200-002
Nov 6, 2013
IR1166S
Qualification Information†
††
Industrial
Comments: This family of ICs has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by
extension of the higher Industrial level.
†††
MSL2 260°C
(per IPC/JEDEC J-STD-020)
Yes
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
†
††
†††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no responsibility
for the consequences of the use of this information. International Rectifier assumes no responsibility for any infringement of patents or of
other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any
patent or patent rights of International Rectifier. The specifications mentioned in this document are subject to change without notice. This
document supersedes and replaces all information previously supplied.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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