IR11672AS
ADVANCED SMARTRECTIFIERTM CONTROL IC
Product Summary
Features
Secondary side high speed SR controller
DCM, CrCM flyback and Resonant half-bridge
topologies
200 V proprietary IC technology
Max 500 KHz switching frequency
Anti-bounce logic and UVLO protection
7 A peak turn off drive current
Micropower start-up & ultra low quiescent current
10.7 V gate drive clamp
50ns turn-off propagation delay
Vcc range from 11.3 V to 20 V
Direct sensing of MOSFET drain voltage
Enable function synchronized with MOSFET VDS
transition
Cycle by Cycle MOT Check Circuit prevents
multiple false trigger GATE pulses
Lead-free
Compatible with 0.3 W Standby, Energy Star,
CECP, etc.
Topology
Flyback,
Resonant Half-bridge
VD
200 V
VOUT
10.7 V
Io+ & I o- (typ.)
+2 A & -7 A
Turn on Propagation
Delay (typ.)
60 ns
Turn off Propagation
Delay (typ.)
50 ns
Package Options
8-Lead SOIC
Typical Applications
LCD & PDP TV, Telecom SMPS,
adapters, ATX SMPS, Server SMPS
AC-DC
Ordering Information
Standard Pack
Base Part Number
IR11672AS
1
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Package Type
SOIC8N
Complete Part Number
Form
Quantity
Tube/Bulk
95
IR11672ASPBF
Tape and Reel
2500
IR11672ASTRPBF
© 2013 International Rectifier
Nov 6, 2013
IR11672AS
Typical Connection Diagram
Vin
Rs
Rdc
XFM
Cdc
U1
1
Ci
2
3
RMOT
4
VCC
VGATE
OVT
GND
MOT
VS
EN
VD
IR11672AS
IR11671
Rtn
2
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8
LOAD
Cs
7
6
Co
5
Rg
Q1
© 2013 International Rectifier
Nov 6, 2013
IR11672AS
Table of Contents
Page
Ordering Information
1
Description
4
Absolute Maximum Ratings
5
Electrical Characteristics
6
Functional Block Diagram
8
Input / Output Pin Equivalent Circuit Diagram
9
Lead Definitions
10
Lead Assignments
10
Detailed Pin Description
11
Application Information and Additional Details
12
Package Details
23
Tape and Reel Details
24
Part Marking Information
25
Qualification Information
26
3
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© 2013 International Rectifier
Nov 6, 2013
IR11672AS
Description
IR11672A is a smart secondary-side driver IC designed to drive N-Channel power MOSFETs used as
synchronous rectifiers in isolated Flyback and resonant half-bridge converters. The IC can control one or more
paralleled N-MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed
differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero
current transition. The cycle-by-cycle MOT protection circuit can automatically detect no load condition and turn off
gate driver output to avoid negative current flowing through the MOSFETs. Ruggedness and noise immunity are
accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in
all operating modes.
4
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© 2013 International Rectifier
Nov 6, 2013
IR11672AS
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions.
Parameters
Supply Voltage
Enable Voltage
Cont. Drain Sense Voltage
Pulse Drain Sense Voltage
Source Sense Voltage
Gate Voltage
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Package Power Dissipation
Switching Frequency
Symbol
VCC
VEN
VD
VD
VS
VGATE
TJ
TS
R
PD
fsw
Min.
-0.3
-0.3
-3
-5
-3
-0.3
-40
-55
Max.
20
20
200
200
20
20
150
150
128
970
500
Units
Remarks
V
VCC=20V, Gate off
°C
°C/W
mW
kHz
SOIC-8
SOIC-8, TAMB=25°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
VCC
VD
TJ
Fsw
Definition
Supply voltage
Drain Sense Voltage
Junction Temperature
Switching Frequency
Min.
11.4
-3
-25
---
Max.
18
200
125
500
Units
Min.
5
Max.
75
Units
k
V
°C
kHz
Recommended Component Values
Symbol
RMOT
5
Component
MOT pin resistor value
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© 2013 International Rectifier
Nov 6, 2013
IR11672AS
Electrical Characteristics
VCC=15 V and TA = 25 °C unless otherwise specified. The output voltage and current (V O and IO) parameters are
referenced to GND (pin7).
Supply Section
Parameters
Supply Voltage Operating
Range
VCC Turn On Threshold
VCC Turn Off Threshold
(Under Voltage Lock Out)
VCC Turn On/Off Hysteresis
Symbol
Min.
Typ.
Max.
VCC
11.4
VCC ON
9.8
10.55
11.3
VCC UVLO
8.4
9
9.7
18
VCC HYST
8.5
10
50
65
Quiescent Current
IQCC
1.8
2.2
ICC START
100
200
Sleep Current
I SLEEP
150
200
Enable Voltage High
VENHI
2.15
2.70
3.2
Enable Voltage Low
VENLO
1.2
1.6
2.0
Comparator Section
Parameters
REN
Symbol
Turn-off Threshold
VTH1
Turn-on Threshold
VTH2
Hysteresis
VHYST
Input Bias Current
1.5
Min.
-7
-14
-22
-150
1
7.5
30
100
VCM
-0.15
Symbol
tBLANK
Min.
9
Hysteresis
6
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Max.
0
-6
-14
-50
IIBIAS2
VOFFSET
Reset Threshold
VTH3
VHYST3
mA
µA
CLOAD=10nF,fSW=400kHz
VCC=VCC ON - 0.1V
VEN=0V, VCC =15V
V
M
IIBIAS1
Input CM Voltage Range
Blanking pulse duration
Typ.
-3.5
-9.5
-18
CLOAD=1nF,fSW=400kHz
GBD
Units
mV
Remarks
OVT = 0V, VS=0V
OVT floating, VS=0V
OVT = VCC, VS=0V
55
Comparator Input Offset
One-Shot Section
Parameters
GBD
1.55
ICC
Enable Pull-up Resistance
Remarks
V
Operating Current
Start-up Current
Units
µA
2
mV
2
V
Typ.
Max.
Units
17
2.5
5.4
40
25
µs
© 2013 International Rectifier
V
mV
VD = -50mV
VD = 200V
GBD
Remarks
VCC=10V – GBD
VCC=20V – GBD
VCC=10V – GBD
Nov 6, 2013
IR11672AS
Electrical Characteristics
VCC=15 V and TA = 25 °C unless otherwise specified. The output voltage and current (V O and IO) parameters are
referenced to GND (pin7).
Minimum On Time Section
Parameters
Minimum on time
Min.
Typ.
Max.
Units
190
240
290
ns
RMOT =5kVCC=12V
2.48
3.1
3.72
µs
RMOT =75kVCC=12V
Symbol
VGLO
Min.
Typ.
0.3
Max.
0.5
Units
VGTH
9.0
10.7
12.5
TONmin
Gate Driver Section
Parameters
Gate Low Voltage
Gate High Voltage
tr1
tr2
tf1
tf2
Rise Time
Fall Time
Turn on Propagation Delay
Turn off Propagation Delay
Pull up Resistance
Pull down Resistance
Output Peak Current(source)
Output Peak Current (sink)
7
Symbol
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tDon
tDoff
rup
rdown
IO source
IO sink
18
125
10
30
60
50
4
0.7
2
7
© 2013 International Rectifier
V
ns
95
75
A
Remarks
Remarks
IGATE = 200mA
VCC=12V-18V
(internally clamped)
CLOAD = 1nF, VCC=12V
CLOAD = 10nF, VCC=12V
CLOAD = 1nF, VCC=12V
CLOAD = 10nF, VCC=12V
VDS to VGATE -100mV overdrive
VDS to VGATE -100mV overdrive
IGATE = 1A – GBD
IGATE = -200mA
CLOAD = 10nF – GBD
Nov 6, 2013
IR11672AS
Functional Block Diagram
MOT
VCC
VCC
UVLO
&
REGULATOR
EN
Cycle by Cycle
MOT Check
Circuit
VCC
VD
Min ON Time
VTH1
RESET
VS
VGATE
DRIVER
GND
OVT
Min OFF Time
Vgate
RESET
VTH3
VTH2
8
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© 2013 International Rectifier
VTH1
VTH3
VDS
Nov 6, 2013
IR11672AS
I/O Pin Equivalent Circuit Diagram
VCC
VCC
ESD
Diode
MOT
OVT
ESD
Diode
EN
RESD
RESD
ESD
Diode
ESD
Diode
GND
GND
VCC
VD
ESD
Diode
RESD
ESD
Diode
GATE
200V
Diode
GND
9
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ESD
Diode
GND
© 2013 International Rectifier
Nov 6, 2013
IR11672AS
Lead Definitions
PIN#
1
2
3
4
5
6
7
8
Symbol
VCC
OVT
MOT
EN
VD
VS
GND
VGATE
Description
Supply Voltage
Offset Voltage Trimming
Minimum On Time
Enable
FET Drain Sensing
FET Source Sensing
Ground
Gate Drive Output
10
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1
VCC
2
OVT
3
MOT
4
EN
© 2013 International Rectifier
IR11672S
Lead Assignments
VGATE
8
GND
7
VS
6
VD
5
Nov 6, 2013
IR11672AS
Detailed Pin Description
VCC: Power Supply
This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn off the IC by
pulling this pin below the minimum turn off threshold voltage, without damage to the IC.
To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as close as possible to
the IR11672A. This pin is internally clamped.
OVT: Offset Voltage Trimming
The OVT pin will program the amount of input offset voltage for the turn-off threshold VTH1.
The pin can be optionally tied to ground, to VCC or left floating, to select 3 ranges of input offset trimming.
This programming feature allows for accommodating different R DSon MOSFETs.
MOT: Minimum On Time
The MOT programming pin controls the amount of minimum on time. Once VTH2 is crossed for the first time, the gate signal will
become active and turn on the power FET. Spurious ringings and oscillations can trigger the input comparator off. The MOT
blanks the input comparator keeping the FET on for a minimum time.
The MOT is programmed between 200ns and 3us (typ.) by using a resistor referenced to COM.
EN: Enable
This pin is used to activate the IC “sleep” mode by pulling the voltage level below 1.6V (typ). In sleep mode the IC will consume
a minimum amount of current. All switching functions will be disabled and the gate will be inactive. The EN pin voltage cannot
linger between the Enable low and Enable high thresholds. The pin is intended to operate as a switch with the pin voltage either
above or below the threshold range. The Enable control pin (EN) is not intended to operate at high frequency. For proper
operation, EN positive pulse width needs to be longer than 20µs, EN negative pulse width needs to be longer than 10µs.
Please refer to Figure 12B for the definition of EN pulse width.
VD: Drain Voltage Sense
VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must be taken in
properly routing the connection to the power MOSFET drain.
Additional filtering and or current limiting on this pin are not recommended as it would limit switching performance of the IC.
VS: Source Voltage Sense
VS is the differential sense pin for the power MOSFET Source. This pin must not be connected directly to the power ground pin
(7) but must be used to create a Kelvin contact as close as possible to the power MOSFET source pin.
GND: Ground
This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to this point.
VGATE: Gate Drive Output
This is the gate drive output of the IC. Drive voltage is internally limited and provides 2A peak source and 7A peak sink
capability. Although this pin can be directly connected to the power MOSFET gate, the use of minimal gate resistor is
recommended, especially when putting multiple FETs in parallel.
Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching
performance.
11
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© 2013 International Rectifier
Nov 6, 2013
IR11672AS
Application Information and Additional Details
State Diagram
POWER ON
Gate Inactive
UVLO MODE
VCC < VCCon
Gate Inactive
ICC max = 200uA
VCC > VCCon,
ENABLE HIGH &
VDS>VTH3
NORMAL
VCC < VCCuvlo
or
ENABLE LOW
Gate Active
Gate PW ≥ MOT
Cycle by Cycle MOT Check Enabled
VDS>VTH1 @ MOT
VDSVTH1 at
the end of MOT
Disable the next gate output
Figure 9: MOT Protection Mode
17
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© 2013 International Rectifier
Nov 6, 2013
IR11672AS
Synchronized Enable Function
Sync Enable function guarantees the VGATE always starts switching at the beginning of a switching cycle. This function works
in both flyback and resonant half-bridge topologies. Figure 10 is an example in resonant half-bridge converter.
VGATE
VDS
UVLO & EN
Idrain
Vth3
IC activated in the middle of a
VD>Vth3, Gate
conduction cycle, VGATE stays low.
activated
Vgate has output from the next cycle
Figure 10: Synchronized Enable Function (resonant half-bridge)
General Timing Waveform
VCC
VCC ON
VCC UVLO
t
UVLO
NORMAL
UVLO
Figure 11: Vcc UVLO
VTH1
VDS
VTH2
t Don
t Doff
VGate
90%
50%
10%
t rise
tfall
Figure 12A: Timing waveform
18
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Nov 6, 2013
IR11672AS
VEN
VENHI
VENLO
EN positive pulse width
EN negative
pulse width
Figure 12B: Enable timing waveform
19
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© 2013 International Rectifier
Nov 6, 2013
IR11672AS
11.0 V
10
VCC UVLO Thresholds
ISUPPLY (mA)
10.5 V
1
0.1
10.0 V
9.5 V
9.0 V
VCC ON
8.5 V
VCC UVLO
0.01
5V
10 V
15 V
Supply voltage
8.0 V
-50 °C
20 V
8.5
1.8
ICC Supply Current (mA)
ICC Supply Current (mA)
2.0
1.6
1.4
1.2
50 °C
100 °C
Temperature
150 °C
Figure 15: Icc Quiescent Current vs. Temperature
20
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150 °C
Icc @400KHz, CLOAD=1nF
IQCC
0 °C
50 °C
100 °C
Temperature
Figure 14: Undervoltage Lockout vs. Temperature
Figure 13: Supply Current vs. Supply Voltage
1.0
-50 °C
0 °C
© 2013 International Rectifier
8.3
8.1
7.9
7.7
7.5
-50 °C
0 °C
50 °C
100 °C
Temperature
150 °C
Figure 16: Icc Supply Currrent @1nF Load vs.
Temperature
Nov 6, 2013
IR11672AS
0.0
0.0
-10.0
VTH2 Thresholds (mV)
VTH1 Threshold (mV)
-5.0
-15.0
-20.0
OVT=GND
OVT=Floating
-25.0
-50.0
-100.0
OVT=VCC
-30.0
-50 °C
0 °C
50 °C
100 °C
Temperature
-150.0
-50 °C
150 °C
0 °C
50 °C
100 °C
Temperature
150 °C
Figure 18: VTH2 vs. Temperature
Figure 17: VTH1 vs. Temperature
-9.0
-9.2
100.0
-9.6
75.0
VTH1 Threshold (mV)
Comparator Hysteresis VHYST (mV)
-9.4
50.0
25.0
0.0
-50 °C
0 °C
50 °C
100 °C
Temperature
150 °C
Figure 19: Comparator Hysteresis vs.
Temperature
21
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© 2013 International Rectifier
-9.8
-10.0
-10.2
-10.4
-10.6
VS=-150mV
-10.8
VS=0V
-11.0
VS=+2V
-11.2
-50 °C
0 °C
50 °C
100 °C
Temperature
150 °C
Figure 20: VTH1 vs. Temperature and Common Mode
(OVT=Floating)
Nov 6, 2013
IR11672AS
4 us
-50.0
-55.0
VS=-150mV
3 us
VS=0V
Minimum On Time (us)
VTH1 Threshold (mV)
-60.0
VS=+2V
-65.0
-70.0
-75.0
-80.0
2 us
RMOT=5k
RMOT=75k
1 us
-85.0
-90.0
-50 °C
0 °C
50 °C
100 °C
Temperature
0 us
-50 °C
150 °C
Figure 21: VTH2 vs. Temperature and
Common Mode
0 °C
50 °C
100 °C
Temperature
150 °C
Figure 22: MOT vs Temperature
3.0 V
80 ns
2.5 V
VEN HI
2.0 V
VEN LO
1.5 V
Propagation Delay
Enable Thresholds
75 ns
70 ns
65 ns
60 ns
Turn-on Propagation Delay
55 ns
Turn-off Propagation Delay
50 ns
45 ns
40 ns
1.0 V
-50 °C
0 °C
50 °C
100 °C
Temperature
150 °C
Figure 23: Enable Threshold vs. Temperature
22
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© 2013 International Rectifier
35 ns
-50 °C
0 °C
50 °C
100 °C
Temperature
150 °C
Figure 24: Turn-on and Turn-off Propagation Delay vs.
Temperature
Nov 6, 2013
IR11672AS
Package Details: SOIC8N
23
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© 2013 International Rectifier
Nov 6, 2013
IR11672AS
Tape and Reel Details: SOIC8N
LOADED TAPE FEED DIRECTION
A
B
H
D
F
C
NOTE : CONTROLLING
DIM ENSION IN M M
E
G
CARRIER TAPE DIMENSION FOR
Metric
Code
Min
Max
A
7.90
8.10
B
3.90
4.10
C
11.70
12.30
D
5.45
5.55
E
6.30
6.50
F
5.10
5.30
G
1.50
n/a
H
1.50
1.60
8SOICN
Imperial
Min
Max
0.311
0.318
0.153
0.161
0.46
0.484
0.214
0.218
0.248
0.255
0.200
0.208
0.059
n/a
0.059
0.062
F
D
C
B
A
E
G
H
REEL DIMENSIONS FOR 8SOICN
Metric
Code
Min
Max
A
329.60
330.25
B
20.95
21.45
C
12.80
13.20
D
1.95
2.45
E
98.00
102.00
F
n/a
18.40
G
14.50
17.10
H
12.40
14.40
24
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© 2013 International Rectifier
Imperial
Min
Max
12.976
13.001
0.824
0.844
0.503
0.519
0.767
0.096
3.858
4.015
n/a
0.724
0.570
0.673
0.488
0.566
Nov 6, 2013
IR11672AS
Part Marking Information
11672A
Part number
YWW ?
Date code
Pin 1
Identifier
C XXXX
?
MARKING CODE
P
Lead Free Released
Non-Lead Free Released
25
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IR logo
© 2013 International Rectifier
Lot Code
(Prod mode –
4 digit SPN code)
Assembly site code
Per SCOP 200-002
Nov 6, 2013
IR11672AS
Qualification Information†
††
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
IC Latch-Up Test
RoHS Compliant
†
††
†††
Industrial
Comments: This family of ICs has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by
extension of the higher Industrial level.
†††
MSL2 260°C
(per IPC/JEDEC J-STD-020)
Class B
(per JEDEC standard JESD22-A115)
Class 2
(per EIA/JEDEC standard EIA/JESD22-A114)
Class I, Level A
(per JESD78)
Yes
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no responsibility
for the consequences of the use of this information. International Rectifier assumes no responsibility for any infringement of patents or of
other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any
patent or patent rights of International Rectifier. The specifications mentioned in this document are subject to change without notice. This
document supersedes and replaces all information previously supplied.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
26
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© 2013 International Rectifier
Nov 6, 2013