IR11682SPBF

Datasheet No – 97476 July 1, 2011 IR11682S DUAL SmartRectifier • • • • • • • • • • • • • DRIVER IC Product Summary Features • TM Secondary-side high speed controller for synchronous rectification in resonant half bridge topologies 200V proprietary IC technology Max 400KHz switching frequency Anti-bounce logic and UVLO protection 4A peak turn off drive current Micropower start-up & ultra low quiescent current 10.7V gate drive clamp 80ns turn-off propagation delay Wide Vcc operating range Direct sensing for both Synchronous Rectifiers Cycle by Cycle MOT Check Circuit prevents multiple false trigger GATE pulses Minimal component count Simple design Lead-free Topology LLC Half-bridge VD 200V VOUT 10.7V Clamped Io+ & I o- (typical) +1A & -4A Turn on Propagation Delay 100ns (typical) Turn off Propagation Delay 80ns (typical) Package Options Typical Applications • LCD & PDP TV, Telecom SMPS, AC-DC adapters 8-Lead SOIC Typical Connection Diagram Vin SR1 C1 Cdc M1 Rg1 Lr 1 2 1 2 3 4 C2 Rtn www.irf.com M2 GATE1 GATE2 VCC GND VS1 VS2 VD1 VD2 8 7 6 5 Cout IR1168 IR11682 LOAD Rg2 SR2 © 2010 International Rectifier IR11682S Table of Contents Page Description 3 Qualification Information 4 Absolute Maximum Ratings 5 Electrical Characteristics 6 Functional Block Diagram 8 Input/Output Pin Equivalent Circuit Diagram 9 Lead Definitions 10 Lead Assignments 10 Application Information and Additional Details 12 Package Details 19 Tape and Reel Details 20 Part Marking Information 21 Ordering Information 22 www.irf.com © 2010 International Rectifier 2 IR11682S Description IR11682 is a dual smart secondary-side rectifier driver IC designed to drive two N-Channel power MOSFETs used as synchronous rectifiers in resonant converter applications. The IC can control one or more paralleled N MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source for each rectifier MOSFET voltage is sensed differentially to determine the level of the current and the power switch is turned ON and OFF in close proximity of the zero current transition. The anti shoot-through logic prevents both channels from turning on the power switches at the same time. The cycle-by-cycle MOT protection circuit can automatically detect no load condition and turn off gate driver output to avoid negative current flowing through the MOSFETs. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression that allows reliable operation in fixed and variable frequency applications. www.irf.com © 2010 International Rectifier 3 IR11682S Qualification Information † †† Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model IC Latch-Up Test RoHS Compliant † †† ††† Industrial Comments: This family of ICs has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level. ††† MSL2 260°C SOIC8N (per IPC/JEDEC J-STD-020) Class B (per JEDEC standard JESD22-A115) Class 2 (per EIA/JEDEC standard EIA/JESD22-A114) Class 1, Level A (per JESD78) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. www.irf.com © 2010 International Rectifier 4 IR11682S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Parameters Supply Voltage Cont. Drain Sense Voltage Pulse Drain Sense Voltage Source Sense Voltage Gate Voltage Operating Junction Temperature Storage Temperature Thermal Resistance Package Power Dissipation Switching Frequency Symbol VCC VD VD VS VGATE TJ TS RθJA PD fsw Min. -0.3 -1 -5 -3 -0.3 -40 -55 Max. 20 200 200 20 20 150 150 128 970 400 Units V V V V V °C °C °C/W mW kHz Remarks VCC=20V, Gate off SOIC-8 SOIC-8, TAMB=25°C Recommended Operating Conditions For proper operation the device should be used within the recommended conditions. Symbol VCC VD1, VD2 TJ Fsw Definition Supply voltage Drain Sense Voltage Junction Temperature Switching Frequency Min. 8.6 -3 † -25 --- Max. 18 200 125 400 Units V °C kHz † VD1, VD2 -3V negative spike width ≤100ns www.irf.com © 2010 International Rectifier 5 IR11682S Electrical Characteristics VCC=15V and TA = 25°C unless otherwise specified. The output volt age and current (VO and IO) parameters are referenced to GND (pin7). Supply Section Parameters Supply Voltage Operating Range VCC Turn On Threshold VCC Turn Off Threshold (Under Voltage Lock Out) VCC Turn On/Off Hysteresis Symbol Min. VCC VCC ON VCC UVLO Typ. Max. Units 8.6 7.5 8.1 18 8.5 V V 7 7.6 8 V 18 60 4.3 140 V mA mA mA µA VCC HYST 0.5 14 48 2.6 Operating Current ICC Quiescent Current Start-up Current IQCC ICC START Comparator Section Parameters Turn-off Threshold Turn-on Threshold Hysteresis Input Bias Current Input Bias Current Comparator Input Offset Symbol VTH1 VTH2 VHYST IIBIAS1 IIBIAS2 VOFFSET Min. -12 -220 One-Shot Section Parameters Blanking pulse duration Symbol tBLANK Reset Threshold Hysteresis GBD CLOAD =1nF, fSW = 400kHz CLOAD =4.7nF, fSW = 400kHz VCC=VCC ON - 0.1V Typ. -6 -140 141 1 10 Max. 0 -80 Min. 8 Typ. 17 2.5 5.4 40 Max. 25 Units Remarks µs V VCC=10V – GBD V VCC=20V – GBD mV VCC=10V – GBD Min. 600 Typ. 850 Max. 1100 Units ns VTH3 VHYST3 Minimum On Time Section Parameters Symbol Minimum on time TOnmin Remarks www.irf.com 10 50 2 Units Remarks mV mV mV µA VD = -50mV µA VD = 200V mV GBD Remarks © 2010 International Rectifier 6 IR11682S Electrical Characteristics VCC=15V and TA = 25°C unless otherwise specified. The output volt age and current (VO and IO) parameters are referenced to GND (pin7). Gate Driver Section Parameters Gate Low Voltage Gate High Voltage Rise Time Fall Time Turn on Propagation Delay Turn off Propagation Delay Pull up Resistance Pull down Resistance Output Peak Current (source) Output Peak Current (sink) Symbol VGLO VGTH tr1 tr2 tf1 tf2 tDon tDoff rup rdown IO source IO sink Min. 8.5 Typ. 0.3 10.7 10 80 5 25 100 80 5 1.2 1 4 Max. 0.5 13.5 200 120 Units V V ns ns ns ns ns ns Ω Ω A A www.irf.com Remarks IGATE = 200mA VCC=12V-18V (internally clamped) CLOAD = 1nF CLOAD = 4.7nF CLOAD = 1nF CLOAD = 4.7nF VDS to VGATE -100mV overdrive VDS to VGATE -100mV overdrive IGATE = 15mA – GBD IGATE = -200mA – GBD CLOAD = 1nF – GBD CLOAD = 1nF – GBD © 2010 International Rectifier 7 IR11682S Functional Block Diagram www.irf.com © 2010 International Rectifier 8 IR11682S I/O Pin Equivalent Circuit Diagram www.irf.com © 2010 International Rectifier 9 IR11682S Lead Definitions PIN# 1 2 3 4 5 6 7 8 Symbol GATE1 VCC VS1 VD1 VD2 VS2 GND GATE2 Description Gate Drive Output 1 Supply Voltage Sync FET 1 Source Voltage Sense Sync FET 1 Drain Voltage Sense Sync FET 2 Drain Voltage Sense Sync FET 2 Source Voltage Sense Analog and Power Ground Gate Drive Output 2 Lead Assignments 1 GATE1 GATE2 8 2 VCC GND 7 3 VS1 VS2 6 4 VD1 VD2 5 www.irf.com © 2010 International Rectifier 10 IR11682S Detailed Pin Description VCC: Power Supply This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC. To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as close as possible to the IR11682. This pin is not internally clamped. GND: Ground This is ground potential pin of the integrated control circuit. referenced to this point. The internal devices and gate driver are VD1 and VD2: Drain Voltage Sense These are the two high-voltage pins used to sense the drain voltage of the two SR power MOSFETs. Routing between the drain of the MOSFET and the IC pin must be particularly optimized. Additional RC filter in not necessary but could be added to VD1 and VD2 pins to increase noise immunity. For applications which VD voltage exceeds 100V, a 1Kohm to 2Kohm VD resistor is recommended to be added between the drain of SR MOSFET and VD pin. The VD resistor helps to limit the switching loss of VD pins. VS1 and VS2: Source Voltage Sense These are the two differential sense pins for the two source pins of the two SR power MOSFETs. This pin must not be connected directly to the GND pin (pin 7) but must be used to create a Kelvin contact as close as possible to the power MOSFET source pin. GATE1 and GATE2: Gate Drive Outputs These are the two gate drive outputs of the IC. The gate voltage is internally clamped and has a +1A/-4A peak drive capability. Although this pin can be directly connected to the synchronous rectifier (SR) MOSFET gate, the use of gate resistor is recommended (specifically when putting multiple MOSFETs in parallel). Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance. www.irf.com © 2010 International Rectifier 11 IR11682S Application Information and Additional Details State Diagram POWER ON Gate Inactive UVLO MODE VCC < VCCon Gate Inactive ICC = ICC START VCC > VCCon & VDS>VTH3 VCC < VCCuvlo NORMAL Gate Active Gate PW ≥ MOT Cycle by Cycle MOT Check Enabled VDS>VTH1 @ MOT VDS