IR1169STRPBF

IR1169S ADVANCED SMARTRECTIFIERTM CONTROL IC Product Summary Features                Secondary side high speed SR controller Flyback, Forward and Half-bridge topologies CCM operation with SYNC function 200 V proprietary IC technology Max 500 KHz switching frequency Anti-bounce logic and UVLO protection 4 A peak turn off drive current Micropower start-up & low quiescent current 10.7 V gate drive clamp 50 ns turn-off propagation delay Vcc range from 11 V to 20 V Enable function synchronized with MOSFET VDS transition Cycle by Cycle MOT Check Circuit prevents multiple false trigger GATE pulses Lead-free Compatible with 0.3 W Standby, Energy Star, CECP, etc. Topology Flyback, Forward, HalfBridge VD 200 V VOUT 10.7 V Io+ & I o- (typ.) +1 A & -4 A Turn on Propagation Delay (typ.) 70 ns Turn off Propagation Delay (typ.) 50 ns Package Options 8-Lead SOIC Typical Applications  Telecom SMPS, ATX SMPS, Server SMPS, ACDC adapters Ordering Information Standard Pack Base Part Number IR1169S 1 www.irf.com Package Type SOIC8N Complete Part Number Form Quantity Tube/Bulk 95 IR1169SPBF Tape and Reel 2500 IR1169STRPBF © 2013 International Rectifier Nov 6, 2013 IR1169S Typical Connection Diagram L Vin VOUT RCC CVCC vcc Rg Rmot IR1169S VCC 1 SYNC 2 MOT 3 EN 4 Cin GATE 8 GND 7 VS 6 VD 5 QFWL Cout IR1169 Rtn Primary Controller 2 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1169S Table of Contents Page Ordering Information 1 Description 4 Absolute Maximum Ratings 5 Electrical Characteristics 6 Functional Block Diagram 8 Input / Output Pin Equivalent Circuit Diagram 9 Lead Definitions 10 Lead Assignments 10 Detailed Pin Description 11 Application Information and Additional Details 12 Package Details 25 Tape and Reel Details 26 Part Marking Information 27 Qualification Information 28 3 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1169S Description IR1169 is a smart secondary-side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback, Forward or Half-bridge converters. The IC can control one or more paralleled NMOSFETs to emulate the behavior of Schottky diode rectifiers. IR1169 works in both DCM and CCM operation modes. The SYNC pin should be used in CCM mode to directly turn-off the MOSFET by a signal from secondary or primary controller. The IC is designed to use simple capacitor coupling interface to communicate with primary controller. In addition to the SYNC control, the drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in all operating modes. 4 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1169S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Parameters Symbol Min. Max. Units Supply Voltage VCC -0.3 20 Enable Voltage VEN -0.3 20 V Cont. SYNC Voltage VSYNC -0.3 20 † Pulse SYNC Voltage VSYNC 20 -0.7 SYNC Current ISYNC -10 10 mA Cont. Drain Sense Voltage VD -1 200 Pulse Drain Sense Voltage VD -5 200 V Source Sense Voltage VS -3 20 Gate Voltage VGATE -0.3 20 Operating Junction Temperature TJ -40 150 °C Storage Temperature TS -55 150 Thermal Resistance 128 °C/W RJA Package Power Dissipation PD 970 mW Switching Frequency fsw 500 kHz † An input resistor of 2kΩ or above is required to SYNC pin for negative pulse Remarks VCC=20V, Gate off SOIC-8 SOIC-8, TAMB=25°C Recommended Operating Conditions For proper operation the device should be used within the recommended conditions. Symbol Definition VCC Supply Voltage VD Drain Sense Voltage TJ Junction Temperature Fsw Switching Frequency †† VD -3V negative spike width ≤100ns Min. 11 Units -3 -25 --- Max. 19 200 125 500 Min. 5 Max. 75 Units k †† V °C kHz Recommended Component Values Symbol RMOT 5 Component MOT pin resistor value www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1169S Electrical Characteristics VCC=15V and TA = 25°C unless otherwise specified. The output voltage and current (V O and IO) parameters are referenced to GND (pin7). Supply Section Parameters VCC Turn On Threshold VCC Turn Off Threshold (Under Voltage Lock Out) VCC Turn On/Off Hysteresis Operating Current Symbol Min. Typ. Max. VCC ON 9.4 10.4 11.0 VCC UVLO 8.6 9.3 10.0 VCC HYST Start-up Current 8.5 10 45 55 IQCC 1.8 2.3 ICC START 100 200 Sleep Current I SLEEP 150 200 Enable Voltage High VENHI 2.25 2.8 3.3 Enable Voltage Low VENLO 1.2 1.6 2.0 Enable Pull-up Resistance REN Comparator Section Parameters Turn-off Threshold Symbol VTH1 VTH2 Turn-on Threshold Hysteresis Input CM Voltage Range One-Shot Section Parameters Blanking pulse duration Reset Threshold www.irf.com Typ. -3.5 -230 Max. 0 -197 1 7.5 10 100 VCM 0 Symbol tBLANK Min. 9 TOnmin CLOAD=1nF,fSW=400kHz mA CLOAD=10nF,fSW=400kHz SYNC=low µA VCC=VCC ON - 0.1V VEN=0V, VCC =15V V GBD Units Remarks mV 230 IIBIAS2 Symbol V M IIBIAS1 µA VD = -50mV VD = 200V 2 V Typ. 17 2.5 5.4 40 Max. 25 Units µs V V mV Min. Typ. Max. 180 240 300 ns RMOT =5kVCC=12V 2.4 3 3.6 µs RMOT =75kVCC=12V VHYST3 Minimum On Time Section Parameters 6 Min. -7 -263 VTH3 Hysteresis Minimum on time 1.5 VHYST Input Bias Current Remarks 1.1 ICC Quiescent Current Units © 2013 International Rectifier Units Remarks VCC=10V – GBD VCC=20V – GBD VCC=10V – GBD Remarks Nov 6, 2013 IR1169S Electrical Characteristics VCC=15V and TA = 25°C unless otherwise specified. The output voltage and current (V O and IO) parameters are referenced to GND (pin7). SYNC Section Parameters SYNC Voltage High (disable) SYNC Voltage Low (enable) Symbol VSYHI VSYLO SYNC Turn-on Prop. Delay TSyon Min. 2.0 0.6 Typ. 2.5 0.8 Max. 3.0 1.0 65 100 55 90 SYNC Turn-off Prop. Delay TSyoff Minimum SYNC pulse width TSYPW 50 Symbol VGLO Min. Typ. 0.24 Max. 0.5 VGTH 9.0 10.7 14 Gate Driver Section Parameters Gate Low Voltage Gate High Voltage 20 180 10 44 Turn on Propagation Delay tDon 70 95 Turn off Propagation Delay tDoff 50 75 Pull up Resistance Pull down Resistance Output Peak Current (source) Output Peak Current (sink) rup 5 1.2 1 4 Fall Time 7 www.irf.com rdown IO source IO sink Remarks V SYNC =high to low ns SYNC=low to high GBD tr1 tr2 tf1 tf2 Rise Time Units © 2013 International Rectifier Units V ns  A Remarks IGATE = 200mA VCC=12V-18V (internally clamped) CLOAD = 1nF, VCC=12V CLOAD = 10nF, VCC=12V CLOAD = 1nF, VCC=12V CLOAD =10nF, VCC=12V VDS to VGATE –VDS goes down from 6V to -1V VDS to VGATE –VDS goes up from -1V to 6V IGATE = 200mA – GBD IGATE = -200mA CLOAD = 10nF – GBD Nov 6, 2013 IR1169S Functional Block Diagram MOT VCC VCC UVLO & REGULATOR EN Cycle by Cycle MOT Check Circuit VCC VD Min ON Time VTH1 VTH2 RESET RESET VS DRIVER VGATE GND Min OFF Time RESET RESET VTH3 SYNC 8 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1169S I/O Pin Equivalent Circuit Diagram VCC VCC ESD Diode ESD Diode MOT/ or EN SYNC RESD ESD Diode ESD Diode GND GND VCC VD ESD Diode RESD ESD Diode GATE 200V Diode GND 9 www.irf.com ESD Diode GND © 2013 International Rectifier Nov 6, 2013 IR1169S Lead Definitions PIN# 1 2 3 4 5 6 7 8 Symbol VCC SYNC MOT EN VD VS GND VGATE Description Supply Voltage SYNC Input for direct turn off Minimum On Time Enable FET Drain Sensing FET Source Sensing Ground Gate Drive Output Lead Assignments www.irf.com VCC 2 SYNC 3 MOT 4 EN © 2013 International Rectifier IR1169 10 1 VGATE 8 GND 7 VS 6 VD 5 Nov 6, 2013 IR1169S Detailed Pin Description VCC: Power Supply This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC. To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as close as possible to the IR1169. This pin is internally clamped. SYNC: Direct Turn-off and Reset SYNC is used to directly turn-off the SR MOSFET by an external signal. The gate output of IR1169 is low when SYNC voltage is higher than VSYHI threshold. The propagation delay from SYNC goes high to gate turns off is 55ns. The turn-off of SYNC is a direct control and it ignores the MOT time (override). The SYNC pin will reset MOT and Blanking time when SYNC switches from low to high. It will reset MOT timer and Blanking timer only at the rising edge of signal. This function is useful for very low output voltage condition (such as overload or short circuit) where the VD voltage is too low to reach Vth3 threshold to reset the timers. SYNC pin also can be used to control the turn-on time of SR MOSFET (adding additional delay time at turn-on for noise immunity). If not used, SYNC pin should be connected to GND. MOT: Minimum On Time The MOT programming pin controls the amount of minimum on time. When V SYNC is low and VTH2 is crossed, the gate signal will become active and turn on the power FET. Spurious ringings and oscillations can trigger the input comparator off. The MOT blanks the input comparator keeping the FET on for a minimum time. The MOT is programmed between 200ns and 3us (typ.) by using a resistor referenced to COM. EN: Enable This pin is used to activate the IC “sleep” mode by pulling the voltage level below 1.6V (typ). In sleep mode the IC will consume a minimum amount of current. All switching functions will be disabled and the gate will be inactive. The EN pin voltage cannot linger between the Enable low and Enable high thresholds. The pin is intended to operate as a switch with the pin voltage either above or below the threshold range. The Enable control pin (EN) is not intended to operate at high frequency. For proper operation, EN positive pulse width needs to be longer than 20µs, EN negative pulse width needs to be longer than 10µs. Please refer to Figure 15B for the definition of EN pulse width. VD: Drain Voltage Sense VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must be taken in properly routing the connection to the power MOSFET drain. VS: Source Voltage Sense VS is the differential sense pin for the power MOSFET Source. This pin should be connected directly to the power ground pin (7) but must be used to create a kelvin contact as close as possible to the power MOSFET source pin. GND: Ground This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to this point. VGATE: Gate Drive Output This is the gate drive output of the IC. Drive voltage is internally limited and provides 1A peak source and 4A peak sink capability. Although this pin can be directly connected to the power MOSFET gate, the use of minimal gate resistor is recommended, especially when putting multiple FETs in parallel. Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance. 11 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1169S Application Information and Additional Details State Diagram POWER ON Gate Inactive UVLO MODE VCC < VCCon Gate Inactive ICC max = 200uA VCC > VCCon, ENABLE HIGH NORMAL VCC < VCCuvlo or ENABLE LOW Gate Active Gate PW ≥ MOT Cycle by Cycle MOT Check Enabled SYNC Enabled VDS>VTH1 @ MOT VDSVTH1 at the end of MOT Disable the next gate output Figure 13: MOT Protection Mode 19 www.irf.com © 2013 International Rectifier Nov 6, 2013 IR1169S SYNC Reset Function The SYNC pin resets MOT and Blanking time when SYNC switches from low to high. This function is useful for very low output voltage condition (such as overload or short circuit) where the VD voltage is too low to reach Vth3 threshold to reset the timers. VDS