Data Sheet No. PD60161-R
IR2108(4) (S) & (PbF)
HALF-BRIDGE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Packages
Tolerant to negative transient voltage
dV/dt immune
14-Lead SOIC
8-Lead SOIC
• Gate drive supply range from 10 to 20V
IR21084S
IR2108S
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
14-Lead PDIP
• Cross-conduction prevention logic
IR21084
Matched
propagation
delay
for
both
channels
•
• High side output in phase with HIN input
8-Lead PDIP
• Low side output out of phase with LIN input
IR2108
• Logic and power ground +/- 5V offset.
• Internal 540ns dead-time, and
2106/2301//2108//2109/2302/2304 Feature Comparison
programmable up to 5us with one
external RDT resistor (IR21084)
CrossInput
conduction
• Lower di/dt gate driver for better
Dead-Time
Ground Pins
Part
logic
prevention
noise immunity
logic
• Available in Lead-Free
2106/2301
COM
21064
2108
21084
2109/2302
21094
Description
HIN/LIN
HIN/LIN
no
yes
none
Internal 540ns
VSS/COM
COM
VSS/COM
COM
VSS/COM
Programmable 0.54~5 µs
The IR2108(4)(S) are high voltage, high speed
Internal 540ns
IN/SD
yes
power MOSFET and IGBT drivers with depenProgrammable 0.54~5 µs
dent high and low side referenced output
yes
Internal 100ns
HIN/LIN
COM
2304
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS
or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or
IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
VCC
VCC
VB
HIN
HIN
HO
LIN
LIN
VS
COM
LO
TO
LOAD
up to 600V
HO
IR2108
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
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VCC
VCC
VB
HIN
HIN
VS
LIN
LIN
IR21084
TO
LOAD
DT
V SS
RDT
VSS
COM
LO
1
IR2108(4) (S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
VB
High side floating absolute voltage
VS
Min.
Max.
-0.3
625
Units
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side and logic fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
VCC + 0.3
DT
Programmable dead-time pin voltage (IR21084 only)
VSS - 0.3
VCC + 0.3
VIN
Logic input voltage (HIN & LIN )
VSS - 0.3
VCC + 0.3
VSS
Logic ground (IR21084 only)
VCC - 25
VCC + 0.3
dV S/dt
PD
RthJA
Allowable offset supply voltage transient
Package power dissipation @ TA ≤ +25°C
Thermal resistance, junction to ambient
—
50
(8 lead PDIP)
—
1.0
(8 lead SOIC)
—
0.625
(14 lead PDIP)
—
1.6
(14 lead SOIC)
—
1.0
(8 lead PDIP)
—
125
(8 lead SOIC)
—
200
(14 lead PDIP)
—
75
(14 lead SOIC)
—
120
TJ
Junction temperature
—
150
TS
Storage temperature
-50
150
TL
Lead temperature (soldering, 10 seconds)
—
300
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V S and VSS offset rating are tested with all supplies biased at 15V differential.
Symbol
Definition
VB
High side floating supply absolute voltage
VS
High side floating supply offset voltage
Min.
Max.
VS + 10
VS + 20
Note 1
600
VB
VHO
High side floating output voltage
VS
VCC
Low side and logic fixed supply voltage
10
20
VLO
Low side output voltage
0
VCC
VIN
Logic input voltage
COM
VCC
DT
Programmable dead-time pin voltage (IR21084 only)
VSS
Logic ground (IR21084 only)
IR2108
IR21084
VSS
VCC
VSS
VCC
-5
5
Units
V
°C
TA
Ambient temperature
-40
125
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
2
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IR2108(4) (S) & (PbF)
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified.
Symbol
Definition
Min.
Typ.
Max. Units Test Conditions
ton
Turn-on propagation delay
—
220
300
toff
Turn-off propagation delay
—
200
280
MT
Delay matching | ton - toff |
—
0
30
tr
Turn-on rise time
—
150
220
tf
Turn-off fall time
—
50
80
Deadtime: LO turn-off to HO turn-on(DTLO-HO) &
HO turn-off to LO turn-on (DTHO-LO)
400
4
540
5
680
6
Deadtime matching = | DTLO-HO - DTHO-LO |
—
0
60
—
0
600
DT
MDT
VS = 0V
VS = 0V or 600V
nsec
VS = 0V
VS = 0V
usec
nsec
RDT= 0
RDT = 200k (IR21084)
RDT=0
RDT = 200k (IR21084)
Static Electrical Characteristics
VBIAS (VCC , VBS) = 15V, VSS = COM, DT= VSS and TA = 25°C unless otherwise specified. The VIL, VIH and IIN
parameters are referenced to VSS/COM and are applicable to the respective input leads: HIN and LIN. The VO, IO and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
VIH
Logic “1” input voltage for HIN & logic “0” for LIN
2.9
—
—
VIL
Logic “0” input voltage for HIN & logic “1” for LIN
—
—
0.8
VOH
High level output voltage, VBIAS - VO
—
0.8
1.4
VOL
Low level output voltage, VO
—
0.3
0.6
VCC = 10V to 20V
V
VCC = 10V to 20V
IO = 20 mA
IO = 20 mA
ILK
Offset supply leakage current
—
—
50
IQBS
Quiescent V BS supply current
20
75
130
µA
IQCC
Quiescent VCC supply current
0.4
1.0
1.6
mA
IIN+
Logic “1” input bias current
—
5
20
IIN-
Logic “0” input bias current
—
—
2
VCCUV+
VCC and VBS supply undervoltage positive going
8.0
8.9
9.8
VBSUV+
threshold
VCCUV-
VCC and VBS supply undervoltage negative going
7.4
8.2
9.0
VBSUV-
threshold
VCCUVH
Hysteresis
0.3
0.7
—
IO+
Output high short circuit pulsed current
120
200
—
IO-
Output low short circuit pulsed current
250
350
—
VB = VS = 600V
VIN = 0V or 5V
VIN = 0V or 5V
RDT=0
HIN = 5V, LIN = 0V
µA
HIN = 0V, LIN = 5V
V
VBSUVH
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mA
VO = 0V,
PW ≤ 10 µs
VO = 15V,
PW ≤ 10 µs
3
IR2108(4) (S) & (PbF)
Functional Block Diagram
VB
2108
UV
DETECT
VSS/COM
LEVEL
SHIFT
HIN
DT
HO
R
HV
LEVEL
SHIFTER
R
PULSE
FILTER
Q
S
VS
PULSE
GENERATOR
VCC
DEADTIME &
SHOOT-THROUGH
PREVENTION
UV
DETECT
+5V
VSS/COM
LEVEL
SHIFT
LIN
LO
DELAY
COM
VSS
VB
21084
UV
DETECT
HO
R
VSS/COM
LEVEL
SHIFT
HIN
HV
LEVEL
SHIFTER
Q
S
VS
PULSE
GENERATOR
VCC
DEADTIME &
SHOOT-THROUGH
PREVENTION
DT
UV
DETECT
+5V
LIN
R
PULSE
FILTER
VSS/COM
LEVEL
SHIFT
DELAY
LO
COM
VSS
4
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IR2108(4) (S) & (PbF)
Lead Definitions
Symbol Description
HIN
Logic input for high side gate driver output (HO), in phase (referenced to COM for IR2108 and
VSS for IR21084)
LIN
Logic input for low side gate driver output (LO), out of phase (referenced to COM for IR2108
DT
Programmable dead-time lead, referenced to VSS. (IR21084 only)
VSS
Logic Ground (21084 only)
VB
High side floating supply
HO
High side gate driver output
VS
High side floating supply return
and VSS for IR21084)
VCC
Low side and logic fixed supply
LO
Low side gate driver output
COM
Low side return
Lead Assignments
8
HIN
HO
7
3
LIN
VS
6
4
COM
LO
5
8
1
HIN
7
2
3
LIN
VS
6
4
COM
LO
5
2
1
2
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VB
VB
HO
VCC
1
VCC
8 Lead PDIP
8 Lead SOIC
IR2108
IR2108S
VCC
HIN
VB
14
14
1
VCC
13
2
HIN
VB
13
12
11
3
LIN
HO
12
3
LIN
HO
4
DT
VS
11
4
DT
VS
5
VSS
10
5
VSS
10
6
COM
9
6
COM
9
7
LO
8
7
LO
8
14 Lead PDIP
14 Lead SOIC
IR21084
IR21084S
5
IR2108(4) (S) & (PbF)
HIN
LIN
LIN
HO
50%
50%
LO
ton
toff
tr
Figure 1. Input/Output Timing Diagram
90%
tf
90%
10%
LO
10%
50%
50%
HIN
ton
toff
tr
90%
HIN
LIN
50%
LO
90%
50%
HO
DT LO-HO
10%
10%
Figure 2. Switching Time Waveform Definitions
90%
HO
tf
10%
DT HO-LO
90%
10%
MDT=
DT LO-HO
- DT
HO-LO
Figure 3. Deadtime Waveform Definitions
6
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500
Turn-on Propagation Delay (ns)
Turn-on Propagation Delay (ns)
IR2108(4) (S) & (PbF)
400
300
Max.
200
T yp.
100
0
-50
-25
0
25
50
75
500
400
Max .
300
T yp.
200
100
0
100 125
10
Temperature ( C)
Turn-off Propagation Delay (ns)
Turn-off Propagation Delay (ns)
500
400
300
100
Max .
T yp.
0
-50
-25
0
25
50
75
100 125
Temperature (oC)
Figure 5A. Turn-off Propagation Delay
vs.Tem perature
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14
16
18
20
Figure 4B. Turn-on Propagation Delay
vs. Supply Voltage
Figure 4A. Turn-on Propagation Delay
vs. Tem perature
200
12
V BIAS Supply Voltage (V)
o
500
400
300
Max .
T yp.
200
100
0
10
12
14
16
18
20
V BIAS Supply Voltage (V)
Figure 5B. Turn-off Propagation Delay
vs. Supply Voltage
7
IR2108(4) (S) & (PbF)
500
Turn-on Rise Time (ns)
Turn-on Rise Time (ns)
500
400
300
200
Max .
100
T yp.
400
300
Max.
200
T yp.
100
0
0
-50
-25
0
25
50
75
10
100 125
Temperature ( oC)
16
18
20
Figure 6B. Turn-on Rise Time
vs. Supply Voltage
200
Turn-off Fall Time (ns)
200
Turn-off Fall Time (ns)
14
V BIAS Supply Voltage (V)
Figure 6A.Turn-on Rise Tim e
vs. Tem perature
150
100
Max.
50
T yp.
0
-50
150
100
Max.
50
T yp.
0
-25
0
25
50
75
100 125
o
Temperature ( C)
Figure 7A. Turn-off Fall Tim e
vs. Tem perature
8
12
10
12
14
16
18
20
V BIAS Supply Voltage (V)
Figure 7B. Turn-off Fall Tim e
vs. Supply Voltage
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1000
1000
800
800
Deadtime (ns)
Deadtime (ns)
IR2108(4) (S) & (PbF)
Max.
600
T yp.
400
Mi n.
200
-50 -25
Max.
T yp.
600
Min.
400
200
0
25
50
75
10
100 125
14
16
18
20
V BIAS Supply Voltage (V)
Temperature (oC)
Figure 8B. Deadtime vs. Supply Voltage
Figure 8A. Deadtim e vs. Tem perature
8
7
7
6
Max .
5
Input Voltage (V)
Deadtime ( s)
12
T yp.
4
Mi n.
3
2
1
6
5
4
3
Max .
2
1
0
0
50
100
150
RDT (KΩ)
Figure 8C. Deadtim e vs. RDT
(IR21084 Only)
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200
0
-50
-25
0
25
50
75
100 125
Temperature ( oC)
Figure 9A. Logic "1" Input Voltage
vs. Tem perature
9
IR2108(4) (S) & (PbF)
8
4.0
Input Voltage (V)
Input Voltage (V)
7
6
5
4
Max .
3
2
1
0
10
12
14
16
18
3.2
2.4
1.6
Min.
0.8
0.0
-50
20
-25
0
V CC Supply Voltage (V)
High Level Output Voltage (V)
Input Voltage (V)
3.2
2.4
1.6
Min.
0.0
12
14
16
18
V CC Supply Voltage (V)
Figure 10B. Logic "0" Input Voltage
vs. Supply Voltage
10
75
100 125
Figure 10A. Logic "0" Input Voltage
vs. Tem perature
4.0
10
50
Temperature (oC)
Figure 9B. Logic "1" Input Voltage
vs. Supply Voltage
0.8
25
20
4
3
2
1
Max .
T yp.
0
-50
-25
0
25
50
75
100
125
o
Temperature ( C)
Figure 11A. High Level Output
vs. Temperature
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4
Low Level Output Voltage (V)
High Level Output Voltage (V)
IR2108(4) (S) & (PbF)
3
2
Max.
1
T yp.
0
10
12
14
16
18
20
1.5
1.2
0.9
0.6
Max.
0.3
T yp.
0
-50
-25
V CC Supply Voltage (V)
Max .
0.6
T yp.
0.3
0
18
V CC Supply Voltage (V)
Figure 12B. Low Level Output
vs. Supply Voltage
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20
Offset Supply Leakage Current ( A)
Low Level Output Voltage (V)
0.9
16
75
100
125
Figure 12A. Low Level Output
vs. Temperature
1.2
14
50
Temperature ( C)
1.5
12
25
o
Figure 11B. High Level Output
vs. Supply Voltage
10
0
500
400
300
200
100
Max .
0
-50
-25
0
25
50
75
100 125
o
Temperature ( C)
Figure 13A. Offset Supply Leakage Current
vs. Tem perature
11
Offset Supply Leakage Current ( A)
IR2108(4) (S) & (PbF)
500
V BS Supply Current ( A)
400
400
300
200
100
Max .
300
200
100
Max .
T yp.
Min.
0
0
100
200
300
400
500
0
-50
600
-25
V B Boost Voltage (V)
Figure 13B. Offset Supply Leakage Current
vs. Tem perature
3.0
Vcc Supply Current (mA)
V BS Supply Current ( A)
100 125
Figure 14A. V BS Supply Current
vs. Tem perature
400
300
200
Max.
100
T yp.
Min.
0
10
12
14
16
18
V BS Supply Voltage (V)
Figure 14B. V BS Supply Current
vs. Supply Voltage
12
0
25
50
75
Temperature ( oC)
20
2.5
2.0
Max.
1.5
T yp.
1.0
0.5
Min.
0.0
-50
-25
0
25
50
75
100 125
o
Temperature ( C)
Figure 15A. V CC Supply Current
vs. Tem perature
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IR2108(4) (S) & (PbF)
60
Logic "1" Input Current ( A)
V CC Supply Current (mA)
3.0
2.5
2.0
1.5
1.0
Max .
T yp.
0.5
Min.
0.0
10
12
14
16
18
V CC Supply Voltage (V)
50
40
30
20
Max .
10
T yp.
0
-50
20
0
25
50
75
100
125
Temperature ( oC)
Figure 15B. V CC Supply Current
vs. Supply Voltage
Figure 16A. Logic "1" Input Current
vs. Tem perature
5
Logic "0" Input Current ( A)
60
Logic "1" Input Current ( A)
-25
50
40
30
Max.
20
10
T yp.
0
10
12
14
16
18
V CC Supply Voltage (V)
Figure 16B. Logic "1" Input Current
vs. Supply Voltage
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20
4
3
Max .
2
1
0
-50
-25
0
25
50
75
100
125
Temperature ( oC)
Figure 17A. Logic "0" Input Current
vs . Te m pe rature
13
IR2108(4) (S) & (PbF)
12
V CC UVLO Threshold (+) (V)
Logic "0" Input Current ( A)
5
4
3
Max.
2
1
12
14
16
18
10
Max .
9
T yp.
8
Mi n.
7
-50
0
10
11
20
-25
0
V CC Supply Voltage (V)
11
75
100
125
12
V BS UVLO Threshold (+) (V)
VCC UVLO Threshold (-) (V)
50
Figure 18. V CC Undervoltage Threshold (+)
vs. Tem perature
Figure 17B. Logic "0" Input Current
vs. Supply Voltage
10
Max.
9
T yp.
8
Mi n.
7
6
-50
-25
0
25
50
75
100
125
Temperature ( oC)
Figure 19. V CC Undervoltage Threshold (-)
vs. Tem perature
14
25
Temperature (oC)
11
10
Max .
9
T yp.
8
Min.
7
-50
-25
0
25
50
75
100
125
o
Temperature ( C)
Figure 20. V BS Undervoltage Threshold (+)
vs. Tem perature
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IR2108(4) (S) & (PbF)
500
Output Source Current ( A)
V BS UVLO Threshold (-) (V)
11
10
9
Max .
T yp.
8
Min.
7
6
-50
-25
0
25
50
75
400
300
T yp.
200
Min.
100
0
-50
100 125
-25
0
Temperature (oC)
75
100
125
Temperature ( C)
Figure 22A. Output Source Current
vs. Tem perature
600
Output Sink Current (mA)
500
Output Source Current ( A)
50
o
Figure 21. V BS Undervoltage Threshold (-)
vs. Tem perature
400
300
200
100
25
T yp.
Min.
0
10
12
14
16
18
V BIAS Supply Voltage (V)
Figure 22B. Output Source Current
vs. Supply Voltage
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20
500
T yp.
400
300
Min.
200
100
0
-50
-25
0
25
50
75
100
125
Temperature (oC)
Figure 23A. Output Sink Current
vs. Tem perature
15
IR2108(4) (S) & (PbF)
0
V S Offset Supply Voltage (V)
Output Sink Current ( A)
600
500
400
300
T yp.
200
Min.
100
-2
T yp.
-4
-6
-8
-10
0
10
12
14
16
18
10
20
140
120
120
100
140V
70V
0V
40
Temperature (oC)
Temprature (oC)
140
18
20
100
140V
80
70V
60
0V
40
20
1
10
100
1000
Frequency (KHz)
Figure 25. IR2108 vs. Frequency (IRFBC20),
Rgate=33 , V CC=15V
:
16
16
Figure 24. Maxim um V s Negative Offset
vs. Supply Voltage
Figure 23B. Output Sink Current
vs. Supply Voltage
60
14
V BS Flouting Supply Voltage (V)
V BIAS Supply Voltage (V)
80
12
20
1
10
100
1000
Frequency (KHz)
Figure 26. IR2108 vs. Frequency (IRFBC30),
Rgate =22: , VC C=15V
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140
140
120
120
100
1 40V
80
70V
0V
60
40
Temperature (oC)
Temperature (oC)
IR2108(4) (S) & (PbF)
1 40V 70V
0V
100
80
60
40
20
20
1
10
100
1
1000
:
:
140
140
120
120
100
80
140V
70V
0V
20
Temperature (oC)
Temperature (oC)
1000
Figure 28. IR2108 vs. Frequency (IRFPE50),
Rgate=10 , V CC=15V
Figure 27. IR2108 vs. Frequency (IRFBC40),
Rgate=15 , V CC=15V
40
100
Frequency (KHz)
Frequency (KHz)
60
10
100
80
1 40V
60
70V
40
0V
20
1
10
100
1000
1
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 29. IR21084 vs. Frequency (IRFBC20),
Rgate=33 , V CC=15V
Figure 30. IR21084 vs. Frequency (IRFBC30),
Rgate=22 , V CC=15V
:
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:
17
140
140
120
120
100
140V
80
70V
60
0V
Temperature (oC)
Temperature (oC)
IR2108(4) (S) & (PbF)
60
20
20
100
0V
80
40
10
70V
100
40
1
140V
1
1000
Figure 31. IR21084 vs. Frequency (IRFBC40),
Rgate=15 , V CC=15V
140
120
120
100
1 40V
70V
0V
40
Temperature (oC)
Temperature (oC)
:
140
20
140V
100
70V
80
0V
60
40
20
1
10
100
1000
Frequency (KHz)
Figure 33. IR2108S vs. Frequency (IRFBC20),
Rgate=33 , V CC=15V
:
18
1000
Figure 32. IR21084 vs. Frequency (IRFPE50),
Rgate=10 , V CC=15V
:
60
100
Frequency (KHz)
Frequency (KHz)
80
10
1
10
100
1000
Frequency (KHz)
Figure 34. IR2108S vs. Frequency (IRFBC30),
Rgate=22 , V CC=15V
:
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IR2108(4) (S) & (PbF)
0V
100
80
60
Tempreture (oC)
120
120
Temperature (oC)
140V 70V 0V
140
140V70V
140
100
80
60
40
40
20
20
1
10
100
1
1000
:
:
140
140
120
120
100
80
140V
70V
0V
Temperature (oC)
Temperature (oC)
1000
Figure 36. IR2108S vs. Frequency
(IRFPE50), Rgate=10 , V CC=15V
Figure 35. IR2108S vs. Frequency (IRFBC40),
Rgate=15 , V CC=15V
40
100
Frequency (KHz)
Frequency (KHz)
60
10
100
80
1 40V
70V
60
0V
40
20
20
1
10
100
1000
Frequency (KHz)
Figure 37. IR21084S vs. Frequency (IRFBC20),
Rgate=33 , V CC=15V
:
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1
10
100
1000
Frequency (KHz)
Figure 38. IR21084S vs. Frequency (IRFBC30),
Rgate =22 , VCC =15V
:
19
140
140
120
120
100
1 40V
80
70V
0V
60
40
140V 70V
0V
100
80
60
40
20
20
1
10
100
1000
1
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 39. IR21084S vs. Frequency (IRFBC40),
Rgate=15 , V CC=15V
Figure 40. IR21084S vs. Frequency (IRFPE50),
Rgate=10 , V CC=15V
:
20
Temperature (oC)
Temperature (oC)
IR2108(4) (S) & (PbF)
:
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IR2108(4) (S) & (PbF)
Case outlines
01-6014
01-3003 01 (MS-001AB)
8-Lead PDIP
D
DIM
B
5
A
F OOT PRINT
8
6
7
6
5
H
E
1
2
3
0.25 [.010]
4
A
6.46 [.255]
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
6X
e
3X 1.27 [.050]
e1
8X b
0.25 [.010]
A1
A
8X 1.78 [.070]
MAX
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
8X L
8X c
7
C A B
NOT ES :
1. DIMENSIONING & TOLE RANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENSION: MILLIME TER
3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHE S].
4. OUTLINE CONFORMS T O JEDEC OUT LINE MS-012AA.
8-Lead SOIC
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MILLIMETERS
MAX
A
8X 0.72 [.028]
INCHES
MIN
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROTRUSIONS NOT T O E XCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROTRUSIONS NOT T O E XCEED 0.25 [.010].
7 DIMENS ION IS T HE LE NGT H OF LEAD FOR SOLDERING T O
A SUBS TRAT E.
01-6027
01-0021 11 (MS-012AA)
21
IR2108(4) (S) & (PbF)
14-Lead PDIP
14-Lead SOIC (narrow body)
22
01-6010
01-3002 03 (MS-001AC)
01-6019
01-3063 00 (MS-012AB)
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IR2108(4) (S) & (PbF)
ORDER INFORMATION
Basic Part (Non-Lead Free)
8-Lead PDIP IR2108
8-Lead SOIC IR2108S
14-Lead PDIP IR21084
14-Lead SOICIR21084S
order
order
order
order
Lead-Free Part
IR2108
IR2108S
IR21084
IR21084S
8-Lead PDIP IR2108
8-Lead SOIC IR2108S
14-Lead PDIP IR21084
14-Lead SOIC IR21084S
order
order
order
order
IR2108PbF
IR2108SPbF
IR21084PbF
IR21084SPbF
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Website.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/08/04
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23