IR21364(S&J)PBF
3-PHASE BRIDGE DRIVER
Features
Product Summary
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage – dV/dt immune
Gate drive supply range from 11.5 V to 20 V
Undervoltage lockout for all channels
Over-current shutdown turns off all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
Cross-conduction prevention logic
Low side and High side outputs in phase with inputs.
3.3 V logic compatible
Lower di/dt gate drive for better noise immunity
Externally programmable delay for automatic fault clear
RoHS Compliant
Typical Applications
Topology
≤ 600 V
VOFFSET
11.5 V – 20V
VOUT
IO+ & IO(typical)
tON & tOFF
(typical)
200 mA & 350 mA
500 ns & 530 ns
Package Options
Motor Control
Air Conditioners/ Washing Machines
General Purpose Inverters
Micro/Mini Inverter Drives
28-Lead SOIC
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3 phase bridge
driver
1
44-Lead PLCC
w/o 12 Leads
May 31, 2016
IR21364(S&J)PBF
Description
The IR21364(S&J)PBF is a high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side
referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction.
Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six
outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs
simultaneously. An open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred.
Overcurrent fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the
RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive Nchannel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.
†
Qualification Information
††
Industrial
Comments: This family of ICs has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
Qualification Level
†††
SOIC28W
MSL3 , 260C
(per IPC/JEDEC J-STD-020)
PLCC44
MSL3 , 245C
(per IPC/JEDEC J-STD-020)
Moisture Sensitivity Level
†††
Class 2
(per JEDEC standard JESD22-A114)
Human Body Model
ESD
Class B
(per EIA/JEDEC standard EIA/JESD22-A115)
Machine Model
Class I, Level A
(per JESD78)
Yes
IC Latch-Up Test
RoHS Compliant
†
††
†††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
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2
May 31, 2016
IR21364(S&J)PBF
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
Definition
VS
High side offset voltage
Max
VB
High side floating supply voltage
High side floating output voltage
VCC
Low side and logic fixed supply voltage
VSS
Logic ground
-0.3
625
VS1,2,3 - 0.3 VB 1,2,3 + 0.3
Low side output voltage
-0.3
25
VCC - 25
VCC + 0.3
-0.3
VCC + 0.3
lower of
VCC + 0.3 or
Vss+15
VCC + 0.3
VIN
Input voltage LIN, HIN, ITRIP, EN, RCIN
VSS -0.3
VFLT
FAULT output voltage
VSS -0.3
dV/dt
Allowable offset voltage slew rate
PD
RthJA
Units
VB 1,2,3 - 25 VB 1,2,3 + 0.3
VHO
VLO1,2,3
Min
—
50
Package power dissipation
@ TA ≤ +25 °C
(28 lead SOIC)
—
1.6
(44 lead PLCC)
—
2.0
Thermal resistance, junction to
ambient
(28 lead SOIC)
—
78
(44 lead PLCC)
—
63
TJ
Junction temperature
—
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
—
300
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute referenced to COM. The V S & VSS offset rating are
tested with all supplies biased at a 15 V differential.
Symbol
Definition
VB1,2,3
VS 1,2,3
VCC
VHO 1,2,3
High side floating supply voltage
High side floating supply voltage
Low side supply voltage
High side output voltage
VLO1,2,3
IR21364
IR21364
Min.
Max.
VS1,2,3 +11.5
Note 1
11.5
VS1,2,3
VS1,2,3 + 20
600
20
VB1,2,3
Low side output voltage
0
VCC
VSS
Logic ground
-5
5
VFLT
FAULT output voltage
VSS
VCC
VRCIN
RCIN input voltage
VSS
VCC
Units
V
VITRIP
VIN
TA
ITRIP input voltage
VSS
VSS + 5
Logic input voltage LIN, HIN, EN
VSS
VSS + 5
-40
Ambient temperature
125
°C
Note 1: Logic operational for VS of COM -5 V to COM + 600 V. Logic state held for VS of COM -5 to COM – VBS.
(Please refer to the Design Tip DT97 -3 for more details).
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3
May 31, 2016
IR21364(S&J)PBF
Static Electrical Characteristics
VBIAS (VCC, VBS 1,2,3) = 15 V, TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
VSS and are applicable to all six channels (HIN1,2,3 and LIN1,2,3). The V O and IO parameters are referenced to COM
and VS1,2,3 and are applicable to the respective output leads: HO1,2,3 and LO1,2,3.
Symbol
Definition
Min Typ Max Units
VIH
Logic “0” input voltage
—
—
VIL
0.8
Logic “1” input voltage
2.5
—
—
VEN,TH+
Enable positive going threshold
—
—
2.5
VEN,TH-
Enable negative going threshold
0.8
—
—
VIT,TH+
ITRIP positive going threshold
0.37
0.46
0.55
VIT,HYS
ITRIP hysteresis
—
0.07
—
VRCIN, TH+
RCIN positive going threshold
—
8
—
VRCIN, HYS
RCIN hysteresis
—
3
—
VOH
High level output voltage, VBIAS - VO
—
0.9
1.4
VOL
Low level output voltage, VO
—
0.4
0.6
IR21364
9.6
10.4
11.2
IR21364
8.6
9.4
10.2
IR21364
—
1
—
IR21364
9.6
10.4
11.2
IR21364
8.6
9.4
10.2
IR21364
—
1
—
—
—
50
VCCUV+
VCCUVVCCUVHY
VBSUV+
VBSUVVBSUVHY
llk
VCC supply undervoltage positive going
threshold
VCC supply undervoltage negative going
threshold
VCC supply undervoltage hysteresis
VBS supply undervoltage positive going
threshold
VBS supply undervoltage negative going
threshold
VBS supply undervoltage
hysteresis
Offset supply leakage current
Quiescent VBS supply current
—
70
120
IQCC
ILIN+
ILINIHIN+
IHINIITRIP+
IITRIPIEN+
IEN-
Quiescent VCC supply current
Input bias current (LOUT = HI)
Input bias current (LOUT = LO)
Input bias current (HOUT = HI)
Input bias current (HOUT = LO)
“High” ITRIP input bias current
“Low” ITRIP input bias current
“High” ENABLE input bias current
“Low” ENABLE input bias current
—
—
-1
—
-1
—
-1
—
-1
0.6
100
—
100
—
3.3
—
100
—
1.3
195
—
195
—
6
—
—
—
IRCIN
RCIN input bias current
—
—
1
Io+
Output high short circuit pulsed current
120
200
—
Io-
Output low short circuit pulsed current
250
350
—
—
—
50
50
100
100
IQBS
Ron_RCIN
Ron_FAULT
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RCIN low on resistance
FAULT low on resistance
4
Test
Conditions
V
µA
mA
µA
Io = 20 mA
VB = VS = 600 V
VB1,2,3 = VS1,2,3 =
600 V
VIN = 0 V or 5 V
VLIN = 3.3 V
VLIN = 0 V
VHIN = 3.3 V
VHIN = 0 V
VITRIP = 3.3 V
VITRIP = 0 V
VEN = 3.3 V
VEN = 0 V
Vrcin = 0 V or 15
V
mA
Vo = 0 V,
PW ≤ 10 µs
Vo = 15 V,
PW ≤ 10 µs
Ω
I = 1.5 mA
May 31, 2016
IR21364(S&J)PBF
Dynamic Electrical Characteristics
Dynamic Electrical Characteristics VCC = VBS = VBIAS = 15 V, VS1,2,3 = VSS = COM, TA = 25°C and CL = 1000 pF
unless otherwise specified.
Symbol
t
on
t
off
t
r
t
f
Definition
Min
Typ
Max Units
Turn-on propagation delay
350
500
650
Turn-off propagation delay
Turn-on rise time
375
—
530
125
685
190
Test Conditions
VIN = 0 V & 5 V
Turn-off fall time
ENABLE low to output shutdown propagation
delay
ITRIP to output shutdown propagation delay
—
50
75
300
450
600
VIN, VEN = 0 V or 5 V
500
750
1000
VITRIP = 5 V
ITRIP blanking time
100
150
—
tFLT
ITRIP to FAULT propagation delay
400
600
800
tFILIN
Input filter time (HIN, LIN)
100
200
—
tfilterEn
Enable input filter time
100
200
—
Deadtime
Ton, off matching time (on all six channels)
220
—
290
—
360
75
DT matching (Hi->Lo & Lo->Hi on all channels)
pulse width distortion (pwin-pwout)
—
—
—
—
70
75
FAULT clear time RCIN: R = 2 MΩ, C = 1 nF
1.3
1.65
2
tEN
tITRIP
tbl
DT
MT
MDT
PM
tFLTCLR
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5
ns
VIN = 0 V or 5 V
VITRIP = 5 V
VIN = 0 V & 5 V
External dead time
>450 nsec
ms
PW input =10 µs
VIN = 0 V or 5 V
VITRIP = 0 V
May 31, 2016
IR21364(S&J)PBF
HIN1,2,3
LIN1,2,3
EN
ITRIP
FAULT
RCIN
HO1,2,3
LO1,2,3
Fig. 1. Input/Output Timing Diagram
LIN1,2,3
HIN1,2,
3
50%
50%
50%
EN
PWIN
ten
HO1,2,3
LO1,2,3
ton
t
r
PW
90%
HO1,2,3
LO1,2,3
50
%
tof
f
t
f
90%
OUT
10%
10%
Fig. 2. Switching Time Waveforms
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90%
Fig. 3. Output Enable Timing Waveform
6
May 31, 2016
IR21364(S&J)PBF
HIN1,2,3
50%
LIN1,2,3
50%
50%
50%
LO1,2,3
DT
HO1,2,3
50%
Fig. 4. Internal Deadtime Timing Waveforms
RCIN
50%
50%
ITRIP
FAULT
50%
tflt
50%
90%
Any
Ouput
tfltclr
titrip
Fig. 5. ITRIP/RCIN Timing Waveforms
tin,fi
tin,fi
l
l
on
HIN/LI
N
off
off
on
on
off
high
lo
w
Fig. 6. Input Filter Function
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May 31, 2016
IR21364(S&J)PBF
Lead Definitions
Symbol
Description
VCC
Low side supply voltage
VSS
Logic ground
HIN1,2,3
Logic inputs for high side gate driver outputs (HO1,2,3), in phase
LIN1,2,3
Logic input for low side gate driver outputs (LO1,2,3), in phase
Indicates over-current (ITRIP) or low-side undervoltage lockout has occurred. Negative logic, open-drain
output
Logic input to enable I/O functionality. Positive logic, i.e. I/O logic functions When ENABLE is high. No
effect on FAULT and not latched
Analog input for overcurrent shutdown. When active, ITRIP shuts down outputs and activates FAULT and
RCIN low. When ITRIP becomes inactive, FAULT stays active low for an externally set time T FLTCLR, then
automatically becomes inactive (open-drain high impedance).
External RC network input used to define FAULT CLEAR delay, TFLTCLR, approximately equal to R*C.
When RCIN > 8 V, the FAULT pin goes back into open-drain high-impedance
Low side gate drivers return
High side floating supply
FAULT
EN
ITRIP
RCIN
COM
VB1,2,3
HO1,2,3
High side gate driver outputs
VS1,2,3
High voltage floating supply return
HIN1
HO1
27
3
HIN2
VS1
26
4
HIN3
25
LIN1
VB2
24
VS1
2
HO1
28
VB1
VB1
VCC
VCC
HIN1
1
HIN2
Low side gate driver outputs
HIN3
LO1,2,3
6
5
4
3
43
42
41
7
5
6
LIN2
HO2
23
7
LIN3
VS2
22
8
FAULT
9
ITRIP
VB3
20
EN
HO3
19
LIN1
8
LIN2
9
37
VB2
LIN3
10
36
HO2
11
35
VS2
15
31
VB3
EN
16
30
HO3
RCIN
17
29
VS3
21
FAULT
12
13
12
VSS
13
COM
LO1
16
14
LO3
LO2
15
VS3
18
17
19
VSS
18
20
21
22
23
24
25
LO1
RCIN
LO2
11
14
LO3
ITRIP
COM
10
28 Lead SOIC (wide body)
44 Lead PLCC w/o 12 leads
IR21364S
IR21364J
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8
May 31, 2016
IR21364(S&J)PBF
Functional Block Diagram
IR21364
INPUT
NOISE
FILTER
HIN1
DEADTIME &
SHOOT- THROUGH
PREVENTION
INPUT
NOISE
FILTER
LIN1
VB1
VSS/COM
LEVEL
SHIFTER
HV
LEVEL
SHIFTER
SET
LATCH
RESET
UV
DETECT
DRIVER
HO1
VS1
VB2
HIN2
INPUT
NOISE
FILTER
LIN2
INPUT
NOISE
FILTER
HIN3
INPUT
NOISE
FILTER
DEADTIME &
SHOOT- THROUGH
PREVENTION
VSS/COM
LEVEL
SHIFTER
HV
LEVEL
SHIFTER
SET
RESET
LATCH
UV
DETECT
DRIVER
HO2
VS2
VB3
DEADTIME &
SHOOT- THROUGH
PREVENTION
INPUT
NOISE
FILTER
LIN3
VSS/COM
LEVEL
SHIFTER
HV
LEVEL
SHIFTER
SET
RESET
LATCH
UV
DETECT
DRIVER
VSS
HO3
VS3
VCC
INPUT
NOISE
FILTER
EN
UV
DETECT
VSS/COM
LEVEL
SHIFTER
INPUT
NOISE
FILTER
ITRIP
0.5 V
S
R
SET
DOMINANT
LATCH
DELAY
DRIVER
LO1
DELAY
DRIVER
LO2
DELAY
DRIVER
LO3
Q
VSS/COM
LEVEL
SHIFTER
RCIN
VSS/COM
LEVEL
SHIFTER
FAULT
COM
VCC
VBS
ITRIP
ENAB LE
FAULT
LO1,2,3
HO1,2,3
UVCC, FAULT return to high impedance.
Note 3: When ITRIP