IR2155PBF

Data Sheet No. PD60029 revJ IR2155&(PbF) (NOTE: For new designs, we recommend IR’s new products IR2153 and IR21531) Features • • • • • • • SELF-OSCILLATING HALF-BRIDGE DRIVER Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Undervoltage lockout Programmable oscillator frequency 1 f= 1.4 × (RT + 150Ω) × CT Matched propagation delay for both channels Micropower supply startup current of 125 µA typ. Low side output in phase with RT Available in Lead-Free Product Summary VOFFSET 600V max. Duty Cycle 50% IO+/- 210 mA / 420 mA VOUT 10 - 20V Deadtime (typ.) 1.2 µs Package Description The IR2155 is a high voltage, high speed, selfoscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal deadtime designed for minimum driver crossconduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an N-channel power 8 Lead PDIP MOSFET or IGBT in the high side configuration that operates off a high voltage rail up to 600 volts. Typical Connection up to 600V VCC VB RT HO CT VS COM LO TO LOAD (Refer to Lead Assignment diagram for correct pin configuration) www.irf.com 1 IR2155&(PbF) Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Parameter Definition Symbol VB High Side Floating Supply Voltage VS Value Min. Max. -0.3 625 Units High Side Floating Supply Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 VLO Low Side Output Voltage -0.3 VCC + 0.3 VRT RT Voltage -0.3 VCC + 0.3 VCT CT Voltage -0.3 VCC + 0.3 ICC Supply Current (Note 1) — 25 IRT RT Output Current -5 5 dVs/dt Allowable Offset Supply Voltage Transient — 50 PD Package Power Dissipation @ TA ≤ +25°C RθJA Thermal Resistance, Junction to Ambient (8 Lead DIP) — 1.0 (8 Lead SOIC) — 0.625 (8 Lead DIP) — 125 (8 Lead SOIC) — 200 TJ Junction Temperature — 150 TS Storage Temperature -55 150 TL Lead Temperature (Soldering, 10 seconds) — 300 V mA V/ns W °C/W °C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol Value Min. Max. Units VB High Side Floating Supply Absolute Voltage VS + 10 VS + 20 VS High Side Floating Supply Offset Voltage — 600 VHO High Side Floating Output Voltage VS VB VLO Low Side Output Voltage 0 VCC ICC Supply Current (Note 1) — 5 mA TA Ambient Temperature -40 125 °C Note 1: 2 Parameter Definition V Because of the IR2155’s application specificity toward off-line supply systems, this IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value resistor connected between the chip VCC and the rectified line voltage and a local decoupling capacitor from VCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC, low impedance power source of greater than VCLAMP . www.irf.com IR2155&(PbF) Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 12V, CL = 1000 pF and TA = 25°C unless otherwise specified. Symbol tr tr DT D Parameter Definition Turn-On Rise Time Turn-Off Fall Time Deadtime RT Duty Cycle Value Min. Typ. Max. Units Test Conditions — — 0.50 48 80 40 1.20 50 120 70 2.25 52 ns µs % Static Electrical Characteristics VBIAS (VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol fOSC VCLAMP VCT+ VCTVCTUV VRT+ VRTVRTUV VOH VOL ILK IQBS IQBSUV IQCC IQCCUV ICT VBSUV+ VBSUVVBSUVH VCCUV+ VCCUVVCCUVH IO+ IO- www.irf.com Parameter Definition Oscillator Frequency VCC Zener Shunt Clamp Voltage 2/3 VCC Threshold 1/3 VCC Threshold CT Undervoltage Lockout RT High Level Output Voltage, VCC - RT RT Low Level Output Voltage RT Undervoltage Lockout, VCC - RT High Level Output Voltage, VBIAS - VO Low Level Output Voltage, VO Offset Supply Leakage Current Quiescent VBS Supply Current Micropower VBS Supply Startup Current Quiescent VCC Supply Current Micropower VCC Supply Startup Current CT Input Current VBS Supply Undervoltage Positive Going Threshold VBS Supply Undervoltage Negative Going Threshold VBS Supply Undervoltage Lockout Hysteresis VCC Supply Undervoltage Positive Going Threshold VCC Supply Undervoltage Negative Going Threshold VCC Supply Undervoltage Lockout Hysteresis Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current Value Min. Typ. Max. Units Test Conditions 19.4 94 14.4 7.8 3.8 — — — — — — — — — — — — — — 7.7 20.0 100 15.6 8.0 4.0 20 0 200 20 200 0 — — — 70 55 500 70 0.001 8.4 20.6 106 16.8 8.2 4.2 50 100 300 50 300 100 100 100 50 150 125 1000 150 1.0 9.2 7.3 8.1 8.9 100 7.7 400 8.4 — 9.2 7.4 8.1 8.9 200 210 420 400 250 500 — — — kHz RT = 35.7 kΩ RT = 7.04 kΩ ICC = 5 mA V mV 2.5V < V CC < VCCUV IRT = -100 µA IRT = -1 mA IRT = 100 µA IRT = 1 mA 2.5V < V CC < VCCUV IO = 0A IO = 0A VB = VS = 600V µA V mV V mV mA VO = 0V VO = 15V 3 IR2155&(PbF) Functional Block Diagram VB UV DETECT R HV LEVEL SHIFT RT + R CT R Q S Q DEAD TIME PULSE FILTER R R Q HO S PULSE GEN VS VCC 15.6V + UV DETECT R DEAD TIME DELAY LO COM Lead Definitions Lead Symbol Description RT CT Oscillator timing resistor input,in phase with LO for normal IC operation Oscillator timing capacitor input, the oscillator frequency according to the following equation: f= VB HO VS VCC LO COM 1 1.4 × (RT + 150Ω) × CT where 150Ω is the effective impedance of the RT output stage High side floating supply High side gate drive output High side floating supply return Low side and logic fixed supply Low side gate drive output Low side return Lead Assignments 8 Lead DIP IR2155 4 www.irf.com IR2155&(PbF) 8 Lead PDIP www.irf.com 01-3003 01 5 IR2155&(PbF) VCLAMP V CCUV+ VCC RT (HO) 50% 50% RT RT (LO) CT tf tr 90% HO LO HO LO Figure 1. Input/Output Timing Diagram 10% 90% 10% Figure 2. Switching Time Waveform Definitions RT 50% 50% 90% HO 10% DT LO 90% 10% Figure 3. Deadtime Waveform Definitions 6 www.irf.com IR2155&(PbF) ORDER INFORMATION Basic Part (Non-Lead Free) Lead-Free Part 8-Lead PDIP IR2155 8-Lead PDIP IR2155 order IR2155 order IR2155PbF This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web Site. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/08/04 www.irf.com 7