IR3103

PD-95807 RevB IR3101 Series 1.6A, 500V Half-Bridge FredFet and Integrated Driver Description IR3101 is a gate driver IC integrated half bridge FredFET designed for sub 250W (heat-sink-less) motor drive applications. The sleek and compact single-in-line package is optimized for electronic motor control in appliance applications such as fans and compressors for refrigerators. The IR3101 offers an extremely compact, high performance half-bridge inverter, in a single isolated package for a very simple design for twophase and three-phase motor drivers. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power FredFET® technology (HEXFET® with ultra-fast recovery body diode characteristics), enable efficient and rugged single package construction. Propagation delays for the high and low side power FredFETs are matched thanks to the advance IC technology. Features • Output power FredFets in half-bridge configuration • High side gate drive designed for bootstrap operation • Bootstrap diode integrated into package. • Lower power level-shifting circuit • Lower di/dt gate drive for better noise immunity • Excellent latch immunity on all inputs and outputs • ESD protection on all leads • Isolation 1500 V RMS min Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation are measured under board mounted and still air conditions. Parameters Description VDD High voltage supply VB High side floating supply Max. Values Units 500 V Vo + 25 V o PD Package power dissipation @ TC ≤ 80 C (per die) 5.8 W RthJC Thermal resistance, junction to case 12 °C/W RthJA Thermal resistance, junction to ambient (note 1) 85 °C/W VISO Isolation Voltage (1 min) 1500 VRMS TJ Junction temperature (Power Mosfet) -40 to +150 °C TS Storage temperature -40 to +150 °C TL Lead temperature (soldering, 10 seconds) 300 °C IO Maximum current rating (note 2) 1.6 A IO Continuous output current (VIN =5V, VCC=15V) (TC = 100°C) 1.3 A (TC = 25°C) 2 A Note 1: under normal operational conditions: both power devices working, no heatsink Note 2: see figure 4, fPWM=20kHz www.irf.com 1 IR3101 Internal Electrical Schematic - IR3101 VB 8 VCC HIN LIN VSS VDD 11 1 2 3 IC Driver 9 Vo 5 6 COM Figure 1: Internal connections Recommended Operating Conditions For proper operation, the device should be used within the recommended conditions. Symbol Definition Min. Max. Units VO + 10 VO + 20V V - 450 V Low side and logic fixed supply voltage 10 20 V VIN Logic input voltage VSS VCC V VSS Logic ground -5 5 V VB High side floating supply absolute voltage VDD High voltage supply VCC Note 3: Care should be taken to avoid switching condition where the VO node flies inductively below COM by more than 5V 2 www.irf.com IR3101 MOSFET Characteristics VBIAS (VCC, VB) = 15V and TA = 25oC unless otherwise specified. The VDD parameter is referenced to COM. Symbol V(BR)DSS Definition Drain-to-Source breakdown voltage Min. Typ Max. Units Conditions 500 - - V VIN=0V, ID=250µA IDSS Drain-to-Source leakage current - - 50 µA VDS=500V, VIN =0V RDS(on) Static drain-to-source on resistance - 0.8 1.0 Ω ID = 1.5A VSD Diode forward voltage - 0.82 0.9 V ID = 1.5A, VIN =0V RDS(on) Static drain-to-source on resistance - 1.7 2.0 Ω ID = 1.5A, TJ=125°C VSD Diode forward voltage - 0.70 0.79 V ID = 1.5A, VIN =0V, TJ=125°C EON Turn-On energy losses - 100 135 µJ EOFF Turn-Off energy losses - 5 10 µJ EREC Body-Diode reverse recovery Llosses - 10 20 µJ t RR Reverse recovery time - 105 180 ns EON Turn-On energy losses - 150 205 µJ EOFF Turn-Off energy losses - 10 17 µJ EREC Body-Diode reverse recovery Llosses - 15 35 µJ t RR Reverse recovery time - 130 230 ns C oss Output capacitance - - 100 pF www.irf.com IF = 1.5A VCC = 300V di/dt = 200A/µs TJ=125°C IF = 1.5A VCC = 300V di/dt = 200A/µs VIN=0V, VDD=30V, f=1MHz 3 IR3101 Driver IC Characteristic Symbol Definition VCC supply undervoltage positive going threshold VCCUV+ Min. Typ. Max. Units 8.0 8.9 9.8 V 7.4 8.2 9.0 V 0.3 0.7 - V 8.0 8.9 9.8 V 7.4 8.2 9.0 V 0.3 0.7 - V 2.9 - - V VCC=10V to 20V VCC=10V to 20V VCC supply undervoltage negative going threshold VCCUV- VCC supply undervoltage lockout hysteresis VBS supply undervoltage positive going threshold VCCUVH VBSUV+ VIH VBS supply undervoltage negative going threshold VBS supply undervoltage lockout hysteresis Logic "1" input voltage for HIN & LIN VIL Logic "0" input voltage for HIN & LIN - - 0.8 V IIN+ Logic "1" input bias current - 5 20 IIN- Logic "0" input bias current Delay Matching HS & LS turn on/ turn off - 1 2 µA µA - 0 30 ns VBSUVVBSUVH MT VB 8 VCC HIN LIN VSS HIN, LIN = 5V HIN, LIN = 0V VDD 11 1 2 3 Conditions IC Driver 9 Vo HIN LIN VO 0 1 0 1 0 VDD 1 1 Shoot-Through condition X X X 5 6 COM Figure 2: Driver input/output relation 4 www.irf.com IR3101 Module Pin-Out Description Pin Symbol 1 VCC Logic and internal gate drive supply 2 HIN Logic input for high side gate output 3 LIN Logic input for low side gate output 4 Lead Definitions Not Connected 5 VSS 6 COM 7 Logic Ground Low side MOSFET gate return Not Connected 8 VB High side gate drive floating supply 9 VO Half bridge output 10 11 www.irf.com Not Connected VDD High voltage supply 5 IR3101 Typical Application Connection IR3101 M V+BUS IR3101 VB 8 VCC 1 HIN 2 LIN 3 VSS 5 IC Driver 6 V BUS - VBUS IR3101 11 VB 8 9 Vo VCC 1 HIN 2 LIN 3 VSS 5 IC Driver VBUS IR3101 11 8 9 Vo VCC 1 HIN 2 LIN 3 VSS 6 6 COM VB IC Driver VBUS 11 9 Vo 6 COM COM 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between Vcc-VSS and VB-VO terminals, a capacitor connected between these terminals is recommended and should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended. 3. Low inductance shunt resistor should be used for phase leg current sensing. Similarly, the length of the traces from the pin to the corresponding shunt resistor should be kept as small as possible. 4. Value of the bootstrap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a or Figure 8. 5. Application conditions should guarantee minimum dead-time of 200ns 6 www.irf.com IR3101 3.00 Low Side MOSFET High Side MOSFET Maximum output current [A]. 2.50 2.00 1.50 HS 1.00 LS 0.50 IO 0.00 0 2 4 6 8 10 12 14 16 18 20 Switching Frequency [kHz] Figure 3: Maximum phase current as function of switching frequency Trapezoidal modulation, 120° switching, VBUS=300V, Duty Cycle=0.8, without heatsink: Ta=55°C, TJ=150°C 3.00 Low Side MOSFET High Side MOSFET Maximum output current [A]. 2.50 2.00 1.50 HS 1.00 LS 0.50 IO 0.00 0 2 4 6 8 10 12 14 16 18 20 Switching Frequency [kHz] Figure 4: Maximum phase current as function of switching frequency Trapezoidal modulation, 120° switching,VBUS=300V, Duty Cycle=0.8, with heatsink: TC=100°C, TJ=125°C www.irf.com 7 IR3101 9.75 450 7.75 Current (A) 400 Current Voltage 350 6.75 300 5.75 250 4.75 200 3.75 150 2.75 100 1.75 50 0.75 0 -0.25 Voltage (V) 8.75 -50 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Time (µs) Figure 5. FredFET Turn-on. Typical turn-on waveform @Tj=125°C, VBUS=300V 2.25 450 400 Current Voltage 1.75 350 1.25 250 200 0.75 150 Voltage (V) Current (A) 300 100 0.25 50 0 -0.25 -50 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Time (µs) Figure 6. FredFET Turn-off. Typical turn-on waveform @Tj=125°C, VBUS=300V 8 www.irf.com IR3101 Rds(on) , Drain to Source On-Resistance, Normalized 3.00 2.50 2.00 1.50 1.00 0.50 0.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) Figure 7: Normalized On-Resistance vs temperature VCC=10V, ID=1.5A 20 17.5 15 Capacitance (µF) . 15 12.5 10 10 6.8 7.5 4.7 5 3.3 2.5 2.2 1.5 0 0 5 10 15 Figure 8: Recommended minimum Bootstrap Capacitor value vs Switching Frequency Switching Frequency (kHz) 20 Figure 8: Recommended minimum bootstrap capacitor value vs switching frequency www.irf.com 9 IR3101 Package Outline note 2 -B- 28.19 [1.198] -A27.69 [1.090] 9.14 [0.36] 8.64 [0.34] 3.68 [.145] 3.18 [.125] IR3101 12.19 [.480] 11.69 [.460] 0204 -C3.55 [.140] 3.05 [.120] note 1 note 3 2.54 [0.10] 10X 11X 1.87 [.074] 1.30 [.051] 1.65 [.065] 1.40 [.055] 11X 0.56 [.022] 0.46 [.018] 0.25 (.10) M C A S B 0.30 [.012] 0.20 [.008] 0.25 [.10] Note 1: Marking for pin 1 identification Note 2: Product Part Number Note 3: Lot and Date code marking Dimensioning and Tolerancing per ANSY Y14.5M-1992 Controlling Dimensions: INCH Dimensions are shown in millimeters [inches] Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 01/04 10 www.irf.com