Data Sheet 60055-I
IR6210
(NOTE: For new designs, we
recommend IR’s new products IPS511 and IPS511S)
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Product summary
Vcc(op)
5-50V
Features
•
•
•
•
•
•
•
•
•
•
PWM current limit for short circuit protection
Over-temperature protection
Active output negative clamp
Reverse battery protection for logic circuit
Broken ground protection
Short to Vcc protection
Low noise charge pump
Sleep mode supply current
4kV ESD protection on all leads
Logic ground isolated from power ground
200mΩ
RDS(on)
Ilim
5A
170oC
Tj(sd)
100mJ
Eav
Applications
General Description
The IR6210 is a 5 terminal monolithic high side switch with built
in short circuit, over- temperature, ESD protections, inductive
load turn off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting the
average current during short circuit if the drain current exceeds
5A. The protection circuit latches off the high side switch if the
junction temperature exceeds 170oC and latches on after the
junction temperature falls by 10oC. The Vcc (drain) to out
(source) voltage is actively clamped at 55V, improving its
performance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating and
referenced to the source of the Power MOSFET. Thus the logic
to power ground isolation can be as high as 50V. This allows
operation with larger offset as well as controlling the switch
during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short
circuit, over temperature and open load detection.
Block Diagram
• Solenoid driver
• Programmable logic controller
Truth Table
Condition
Normal
Normal
Output Open
Output Open
Shorted Output
Out
In
H
H
L
L
H
H
H
L
H Current-Limiting
Dg
H
L
H
H
L
PWM Mode
L
Shorted Output
Over-Temperature H
Over-Temperature L
L
L
L
L
L
L
Packages
Vcc
5 Lead SMD220
5 Lead TO-220
GND
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OUT
1
IR6210
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
(TC = 25oC unless otherwise specified.)
Symbol
Parameter
Vcc
Supply voltage
permanent
reverse
Logic to power ground offset
Input voltage
Input current
Output voltage
Output current
Diagnostic output voltage
Diagnostic output current
Repetitive avalanche energy
Electrostatic discharge (Human Body Model)
Electrostatic discharge (Machine Model)
Power dissipation
Operating junction temperature range
Storage temperature range
Lead temperature (soldering, 10 seconds)
Voffset
Vin
Iin
Vout
Iout
Vdg
Idg
Eav
ESD1
ESD2
PD
TJop
TStg
TL
NOTES: (1) with 15kΩ resistors in input and diagnostic
Min.
Max.
-0.3
-16
Vcc -50
-0.3
—
Vcc -50
—
-0.3
—
—
—
—
—
-40
-40
—
50
—
Vcc +0.3
30
10
Vcc +0.3
Units
For 10 seconds, (1)
V
mA
V
A
V
mA
mJ
V
V
W
self-limited
30
10
100
4000
1000
28
150
150
300
Test Conditions
I = 2A (2)
C = 100 pF,R = 1500Ω
C = 200 pF, R = 0Ω
Tcase= 25oC
o
C
(2) maximum frequency depends on heatsink (rectangular waveform)
Static Electrical Characteristics
(TC= 25°C unless otherwise specified.)
Symbol Parameter
Vccop
Iccoff
Iccon
Iccac
Vih
Vil
Ilon
Iloff
Ioh
Iol
Vdgl
Idgh
RDS (on)
2
Operating voltage range
Sleep mode supply current
Supply current (average)
Supply current (AC RMS)
High level input threshold voltage
Low level input threshold voltage
On-state input current
Off-state input current
Output leakage current
Output leakage current
Low level diagnostic output voltage
Diagnostic output leakage current
On-state resistance
Min.
Typ.
5
—
—
—
—
1
10
1
—
0
—
0
—
—
—
40
3
20
2
1.8
—
—
20
—
0.3
—
150
200
Max. Units Test Conditions
35
—
—
—
2.5
—
70
30
—
10
—
10
200
—
V
µA
mA
µA
Vcc=24V, Vin= 0V
Vin = 5V
Vin = 5V
V
µA
V
µA
mΩ
Vin = 3.5V
Vin = 0.4V
Vout = 6V
Vout = 0V
Idg = 1.6mA
Vdg = 5V
Iout = 1A
Vcc = 5V, Iout = 1A
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IR6210
Switching Electrical Characteristics
(VCC = 14V, resistive load (RL) = 12Ω, TC= 25°C.)
Symbol Parameter
tc
Dc
ton
t off
dv/dt on
dv/dt off
Over-current cycle time
Over-current duty cycle
Turn-on delay time to 90%
Turn-off delay time to 10%
Slew rate on
Slew rate off
Min.
Typ.
—
—
—
—
—
—
5
10
50
60
3
5
Max. Units Test Conditions
—
—
—
—
—
—
ms
%
µs
V/ µs
Protection Characteristics
Symbol Parameter
Min.
Typ.
Max.
Ilim
Vsc
Vslh
Vcl1
Vcl2
—
—
—
50
—
5
3.5
3.5
54
56
—
—
—
—
62
Min.
Typ.
—
—
—
—
170
10
3.5
50
Internal current limit
Short circuit detection voltage
Open load detection voltage
Output negative clamp
Output negative clamp
Units Test Conditions
)
V
Iout = 10mA
Iout = 2A
Thermal Characteristics
Symbol Parameter
Tjsd
Thys
Rthjc
Rthja
Thermal shutdown temperature
Thermal hysteresis
Thermal resistance,junction to case
Thermal resistance, junction to ambient
Max. Units Test Conditions
—
—
—
—
o
C
o
C/W
Lead Assignments
3 (Vcc)
3 (Vcc)
1 - Ground
2 - In
3 - Vcc
4 - DG
5 - Out
12345
12345
5 Lead - D2PAK (SMD220)
5 Lead - TO-220
IR6210
IR6210S
Part Number
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3
IR6210
Case Outline 5 Lead - TO-220
IRGB 01-3042 01
Tape & Reel 5 Lead - D2PAK (SMD220)
01-3071 00 / 01-3072 00
4
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IR6210
Case Outline 5 Lead - SMD220 (D2PAK)
3
01-3066 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 0BL, United Kingdom
Tel: ++44 (0) 20 8645 8000
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 81 (0) 33 983 0086
IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon,
Hong Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 3/28/2000
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5
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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