PD-97270 RevC
Integrated Power Hybrid IC for
ow Voltage Motor Applications
Description
IRAM136-3023B
Series
30A, 150V
with Internal Shunt Resistor
International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt
Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light
industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a
single isolated package to simplify design.
This advanced HIC is a combination of IR's low RDS(on) Advance Planar MOSFET Super Rugged technology
and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced
package. A built-in temperature monitor and over-current and over-temperature protections and integrated
under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new
developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold
structure minimizes PCB space and resolves isolation problems to heatsink.
Features
Integrated ate Drivers
Temperature Monitor and Protection
Overcurrent shutdown
ow RDS(on) Advance Planar Super Rugged Technology
Undervoltage lockout for all channels
Matched propagation delay for all channels
5V Schmitt-triggered input logic
Cross-conduction prevention logic
Motor Power up to 4.0kW / 48~100 Vdc
Fully Isolated Package, Isolation 2000VRMS min
RoHS Compliant
Recognized by U (File umber E252584)
Absolute Maximum Ratings
Parameter
Description
Value
Units
VBR(DSS)
MOSFET Blocking Voltage
150
V+
IO @ TC=25°C
Positive Bus Input Voltage
100
RMS Phase Current ( ote 1)
30
IO @ TC=100°C
RMS Phase Current ( ote 1)
15
IO
Pulsed RMS Phase Current ( ote 1 and 2)
56
FPWM
PWM Carrier Frequency
20
kHz
PD
Power Dissipation per MOSFET @ TC =25°C
89
W
VRMS
VISO
Isolation Voltage (1min)
2000
TJ (MOSFET & IC)
Maximum Operating Junction Temperature
+150
TC
Operating Case Temperature Range
-20 to +100
TST
Storage Temperature Range
-40 to +125
T
V
A
°C
Mounting Torque (M4 screw)
0.7 to 1.17
m
ote 1 Sinusoidal modulation at V+=100V, TJ=150°C, FPWM=20kHz, modulation depth=0.8, pf=0.6, see Figure 3
ote 2 tP 400ns
VCC=VBS= 15V, ID=30A,
V+=100V
TC = 25°C
TC = 100°C
5
IRAM136-3023B
Thermal and Mechanical Characteristics
Symbol
Rth(J-C)
Parameter
Min
Typ
Max
5/
---
1.2
1.4
5/
Thermal resistance, FET
Rth(C-S)
Thermal resistance, C-S
---
0.1
---
CD
Creepage Distance
3.5
---
---
5/
Based on Characterization Data only.
Units Conditions
Flat, greased surface. Heatsink
°C/W compound thermal conductivity
1W/m°
mm
See outline Drawings
ot sub ect to production test.
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min
Typ
Max
Units Conditions
RShunt
Resistance
8.1
8.3
8.5
TCoeff
Temperature Coefficient
0
---
200
ppm/°C
PShunt
Power Dissipation
---
---
4.5
W
TRange
Temperature Range
-20
---
125
°C
m
TC = 25°C
-40°C< TC
