IRF100P219XKMA1

IRF100P219 MOSFET StrongIRFETª PG-TO247-3 Features •VerylowRDS(on) •ExcellentgatechargexRDS(on)(FOM) •OptimizedQrr •175°Coperatingtemperature •ProductvalidationaccordingtoJEDECstandard •Optimizedforbroadestavailabilityfromdistributionpartners 1 2 3 Benefits •Reducedconductionlosses •Idealforhighswitchingfrequency •Lowerovershootvoltage •Increasedreliabilityversus150°Cratedparts •Halogen-freeaccordingtoIEC61249-2-21 Drain Pin 2 Gate Pin 1 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),typ 1.4 mΩ RDS(on),max 1.7 mΩ ID(SiliconLimited) 316 A ID(PackageLimited) 203 A QG(0V..10V) 168 nC Type/OrderingCode Package IRF100P219 PG-TO 247-3 Final Data Sheet Source Pin 3 Marking IRF100P219 1 RelatedLinks - Rev.2.1,2020-01-20 StrongIRFETª IRF100P219 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2020-01-20 StrongIRFETª IRF100P219 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 203 316 224 A VGS=10V,TC=25°C VGS=10V,TC=25°C(siliconlimited) VGS=10V,TC=100°C(silicon limited)1) - 812 A TC=25°C - - 464 mJ ID=100A,RGS=50Ω VGS -20 - 20 V - Power dissipation Ptot - - 341 3.8 W TC=25°C TA=25°C,RTHJA=40°C/W3) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case4) Values Min. Typ. Max. RthJC - - 0.44 °C/W - Thermal resistance, junction -Ambient RthJA - - 40 °C/W - Case-to-Sink, Flat Greased Surface RthCS - 0.24 - °C/W - 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) RthJC is measured at TJ approximately 90°C. 2) Final Data Sheet 3 Rev.2.1,2020-01-20 StrongIRFETª IRF100P219 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=1mA 40 - mV/°C ID=2mA,referencedto25°C 2.2 - 3.8 V VDS=VGS,ID=278µA IDSS - - 5 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.4 1.7 1.7 2.1 mΩ VGS=10V,ID=100A VGS=6V,ID=50A Gate resistance1) RG - 1.2 - Ω - Transconductance gfs - 270 - S |VDS|≥2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. 100 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Ciss - 12000 - pF VGS=0V,VDS=50V,f=1MHz Coss - 1800 - pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 80 - pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 30 - ns VDD=50V,VGS=10V,ID=100A, RG=2.7Ω Rise time tr - 90 - ns VDD=50V,VGS=10V,ID=100A, RG=2.7Ω Turn-off delay time td(off) - 100 - ns VDD=50V,VGS=10V,ID=100A, RG=2.7Ω Fall time tf - 80 - ns VDD=50V,VGS=10V,ID=100A, RG=2.7Ω Input capacitance1) 1) Output capacitance 1) 1) Max. Defined by design. Not subject to production test. Final Data Sheet 4 Rev.2.1,2020-01-20 StrongIRFETª IRF100P219 Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=50V,ID=100A,VGS=0to10V 36 - nC VDD=50V,ID=100A,VGS=0to10V - 34 - nC VDD=50V,ID=100A,VGS=0to10V Qsw - 51 - nC VDD=50V,ID=100A,VGS=0to10V Gate charge total Qg - 168 210 nC VDD=50V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 134 - nC VDS=0.1V,VGS=0to10V Output charge1) Qoss - 213 - nC VDD=50V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 53 Gate charge at threshold Qg(th) - Gate to drain charge2) Qgd Switching charge 2) Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 203 A TC=25°C Diode pulse current IS,pulse - - 812 A TC=25°C Diode forward voltage VSD - - 1.2 V VGS=0V,IF=100A,Tj=25°C trr - 90 - ns VR=85V,IF=100A,diF/dt=100A/µs Qrr - 224 - nC VR=85V,IF=100A,diF/dt=100A/µs Reverse recovery time2) 2) Reverse recovery charge 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2020-01-20 StrongIRFETª IRF100P219 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 350 400 package limit silicon limit 350 300 300 250 ID[A] Ptot[W] 250 200 200 150 150 100 100 50 0 50 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 100 101 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 10 µs 102 100 100 µs single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 ms 1 ZthJC[K/W] 10 ID[A] 10 ms 100 DC 10-1 10-2 10-1 10-2 10-3 10-1 100 101 102 103 10-4 10-6 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-01-20 StrongIRFETª IRF100P219 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 850 5 765 4.5 V 5V 5.5 V 6V 7V 8V 10 V 680 595 4 5V RDS(on)[mΩ] 510 ID[A] 4.5 V 425 340 3 2 6V 7V 255 8V 10 V 170 1 85 0 0 1 2 3 4 0 5 0 75 150 225 300 375 450 525 600 675 750 825 VDS[V] ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 850 6 765 5 680 595 4 RDS(on)[mΩ] ID[A] 510 425 340 3 125 °C 2 255 170 25 °C 1 85 175 °C 25 °C 0 0 1 2 3 4 5 6 7 VGS[V] 2 4 6 8 10 12 14 16 18 20 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=100A;parameter:Tj 7 Rev.2.1,2020-01-20 StrongIRFETª IRF100P219 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.4 4.0 3.5 2.0 2780 µA 2.5 1.6 VGS(th)[V] RDS(on)(normalizedto25°C) 3.0 1.2 2.0 278 µA 1.5 1.0 0.8 0.5 0.4 -75 -25 25 75 125 0.0 -75 175 -25 25 Tj[°C] 75 125 175 Tj[°C] RDS(on)=f(Tj),ID=100A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 °C 175 °C Ciss 4 102 103 IF[A] C[pF] 10 Coss 102 101 100 Crss 101 0 20 40 60 80 100 10-1 0.2 0.4 VDS[V] 0.8 1.0 1.2 1.4 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.6 IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-01-20 StrongIRFETª IRF100P219 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 14 20 V 50 V 80 V 12 102 10 25 °C 10 VGS[V] IAV[A] 8 1 100 °C 6 150 °C 4 100 2 10-1 10-1 100 101 102 103 tAV[µs] 0 0 50 100 150 200 250 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 116 114 VBR(DSS)[V] 112 110 108 106 104 102 -75 -25 25 75 125 175 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-01-20 StrongIRFETª IRF100P219 5PackageOutlines Figure1OutlinePG-TO247-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2020-01-20 StrongIRFETª IRF100P219 RevisionHistory IRF100P219 Revision:2020-01-20,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.0 2018-10-03 Release of preliminary version 2.0 2018-10-16 Release of final version 2.1 2020-01-20 Update from IR MOSFT/StrongIRFETTM to StrongIRFETTM Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2020-01-20