StrongIRFET™
IRF135B203
IRF135S203
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
135V
RDS(on) typ.
6.7m
max
8.4m
D
G
S
ID (Silicon Limited)
129A
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
S
D
G
TO-220AB
IRF135B203
G
Gate
Package Type
IRF135B201
IRF135S201
TO-220
D2-Pak
28
S
Source
Orderable Part Number
IRF135B203
IRF135S203
140
ID = 77A
26
120
24
22
20
18
16
T J = 125°C
14
12
10
T J = 25°C
8
100
80
60
40
20
6
4
0
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On– Resistance vs. Gate Voltage
1
D2-Pak
IRF135S203
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tape and Reel
800
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m )
Base part number
S
G
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© 2015 International Rectifier
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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June 17, 2015
IRF135B203/IRF135S203
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Max.
129
91
512
441
2.9
± 20
A
W
W/°C
V
-55 to + 175
300
10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (Thermally limited)
IAR
EAR
Units
°C
595
mJ
870
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
A
mJ
See Fig 15, 15, 23a, 23b
Thermal Resistance
Symbol
Parameter
Junction-to-Case
RJC
Case-to-Sink, Flat Greased Surface
RCS
Junction-to-Ambient
RJA
Junction-to-Ambient (PCB Mount)
RJA
Typ.
–––
0.50
–––
–––
Max.
0.34
–––
62
40
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
135
Typ. Max.
––– –––
Units
Conditions
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.14
–––
V/°C
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
–––
2.0
–––
–––
–––
–––
–––
6.7
–––
–––
–––
–––
–––
2.1
8.4
4.0
20
250
100
-100
–––
m VGS = 10V, ID = 77A
V
VDS = VGS, ID = 250µA
VDS =135 V, VGS = 0V
µA
VDS = 108V,VGS = 0V,TJ =125°C
VGS = 20V
nA
VGS = -20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
IGSS
RG
Reference to 25°C, ID = 5mA
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 200µH, RG = 50, IAS = 77A, VGS =10V.
ISD 77A, di/dt 1700A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 41A, VGS =10V.
2
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IRF135B203/IRF135S203
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Min.
200
–––
–––
–––
–––
–––
–––
Typ.
–––
180
43
46
134
18
73
td(off)
Turn-Off Delay Time
–––
114
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
–––
–––
–––
–––
81
9700
540
250
–––
520
–––
VGS = 0V, VDS = 0V to 108V
–––
700
–––
VGS = 0V, VDS = 0V to 108V
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max. Units
–––
–––
129
–––
–––
512
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
–––
–––
–––
–––
–––
4.0
80
93
270
360
–––
–––
–––
–––
–––
IRRM
Reverse Recovery Current
–––
6.0
–––
Coss eff.(ER)
Coss eff.(TR)
Max. Units
Conditions
–––
S VDS = 10V, ID = 77A
270
ID = 77A
–––
VDS = 68V
nC
–––
VGS = 10V
–––
–––
VDD = 81V
ID = 77A
–––
ns
–––
RG= 2.7
VGS = 10V
–––
–––
–––
–––
pF
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig.7
Diode Characteristics
Symbol
IS
ISM
3
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© 2015 International Rectifier
A
V
D
G
S
TJ = 25°C,IS = 77A,VGS = 0V
V/ns TJ = 175°C,IS =77A,VDS = 135V
TJ = 25°C
VDD = 115V
ns
TJ = 125°C
IF = 77A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A
TJ = 25°C
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June 17, 2015
IRF135B203/IRF135S203
1000
1000
100
BOTTOM
TOP
10
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
4.0V
100
BOTTOM
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
0.1
1
1
10
0.1
100
1000
100
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
100
T J = 175°C
T J = 25°C
10
1
VDS = 50V
60µs PULSE WIDTH
0.1
ID = 77A
VGS = 10V
3.0
2.5
2.0
1.5
1.0
0.5
1
2
3
4
5
6
7
8
-60
60
100
140
180
14
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
ID = 77A
VGS, Gate-to-Source Voltage (V)
Crss = C gd
Coss = Cds + Cgd
Ciss
10000
20
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
-20
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Coss
1000
Crss
100
12
VDS= 108V
VDS= 68V
VDS= 27V
10
8
6
4
2
0
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
4.0V
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0
40
80
120
160
200
240
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.Gate-to-Source Voltage
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IRF135B203/IRF135S203
1000
T J = 175°C
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 25°C
10
1
VGS = 0V
0.5
1.0
OPERATION IN
THIS AREA
LIMITED BY RDS(on)
10
1
10msec
DC
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.1
0.0
100µsec
1msec
100
1.5
0.1
2.0
1
100
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
4.0
170
Id = 5.0mA
3.5
3.0
160
Energy (µJ)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
150
2.5
2.0
1.5
1.0
140
0.5
0.0
130
0
-60 -40 -20 0 20 40 60 80 100120140160180
20
T J , Temperature ( °C )
40
60
80
100
120
140
VDS, Drain-to-Source Voltage (V)
RDS(on), Drain-to -Source On Resistance ( m )
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
20
18
VGS = 4.5V
VGS = 5.5V
VGS = 6.0V
VGS = 8.0V
VGS = 10V
16
14
12
10
8
6
4
0
40
80
120
160
200
ID, Drain Current (A)
Fig 13. Typical On–Resistance vs. Drain Current
5
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IRF135B203/IRF135S203
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
0.05
10
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
600
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 77A
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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© 2015 International Rectifier
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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IRF135B203/IRF135S203
40
3.5
3.0
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
4.0
2.5
2.0
1.5
1.0
ID = 250µA
ID = 1.0mA
ID = 10mA
ID = 1.0A
35
IF = 54A
V R = 115V
30
TJ = 25°C
TJ = 125°C
25
20
15
10
5
0
0.5
-75 -50 -25
0
100 200 300 400 500 600 700 800 900 1000
25 50 75 100 125 150 175
diF /dt (A/µs)
T J , Temperature ( °C )
Fig 18. Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
1600
40
IRRM (A)
30
25
TJ = 25°C
TJ = 125°C
QRR (nC)
35
IF = 77A
V R = 115V
20
15
1400
IF = 54A
V R = 115V
1200
TJ = 25°C
TJ = 125°C
1000
800
600
10
400
5
200
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
QRR (nC)
1600
1400
IF = 77A
V R = 115V
1200
TJ = 25°C
TJ = 125°C
1000
800
600
400
200
0
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRF135B203/IRF135S203
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRF135B203/IRF135S203
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM BLED O N W W 19, 2000
IN T H E A S S E M B L Y L IN E "C "
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM BLY
LO T C O D E
PART NUM BER
D ATE C O D E
YEA R 0 = 2000
W EEK 19
L IN E C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRF135B203/IRF135S203
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRF135B203/IRF135S203
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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IRF135B203/IRF135S203
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
Moisture Sensitivity Level
TO-220
D Pak
MSL1
Yes
RoHS Compliant
†
N/A
2
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
12
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
