IRF135SA204

StrongIRFET™ IRF135SA204 HEXFET® Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters   D VDSS 135V RDS(on) typ. 4.7m max 5.9m G S ID (Silicon Limited) 160A D Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant, Halogen-Free S S S G IRF135SA204 D2PAK-7Pin S Source Orderable Part Number IRF135SA204 200 30 ID = 96A 25 20 15 TJ = 125°C 10 150 100 50 5 TJ = 25°C 0 4 8 12 16 20 V GS, Gate-to-Source Voltage (V) Fig 1. Typical On– Resistance vs. Gate Voltage 1 D Drain Standard Pack Form Quantity Tape and Reel 800 ID , Drain Current (A) RDS(on), Drain-to -Source On Resistance ( m ) Package Type S S D2PAK-7Pin IRF135SA204 G Gate Base part number S 0 25 50 75 100 125 150 175 TC , CaseTemperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature 2017-05-12 IRG5K50P5K50PM06E IRF135SA204 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Max. 160 113 608 500 3.3 ± 20 A  W W/°C V -55 to + 175   °C   300 Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) IAR EAR Units 670 mJ 1280 Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  A mJ See Fig 15, 16, 23a, 23b  Thermal Resistance   Symbol Parameter Junction-to-Case  RJC Junction-to-Ambient (PCB Mount)  RJA Typ. ––– ––– Max. 0.3 40 Units °C/W   Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. 135 Typ. Max. ––– ––– Units Conditions V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.14 ––– V/°C RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current ––– 2.0 ––– ––– ––– ––– ––– 4.7 3.0 ––– ––– ––– ––– 2.2 5.9 4.0 20 250 100 -100 ––– m VGS = 10V, ID = 96A  V VDS = VGS, ID = 250µA VDS =135 V, VGS = 0V µA VDS = 135V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V  Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance IGSS RG Reference to 25°C, ID = 5mA  Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 146µH, RG = 50, IAS = 96A, VGS =10V.  ISD  96A, di/dt  2200A/µs, VDD  V(BR)DSS, TJ 175°C.  Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf  Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 49A, VGS =10V. 2 2017-05-12 IRG5K50P5K50PM06E IRF135SA204 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 270 ––– ––– ––– ––– ––– ––– Typ. ––– 210 54 57 153 20 56 td(off) tf Ciss Coss Crss Turn-Off Delay Time ––– 140 Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– ––– 56 11690 650 290 ––– 630 ––– VGS = 0V, VDS = 0V to 108V ––– 845 ––– VGS = 0V, VDS = 0V to 108V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 160 ––– ––– 608 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– ––– ––– ––– 22 85 98 315 430 ––– ––– ––– ––– ––– IRRM Reverse Recovery Current ––– 6.6 ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 10V, ID = 96A 315 ID = 96A ––– VDS = 68V nC   ––– VGS = 10V ––– ––– VDD = 81V ––– ID = 96A ns ––– RG= 2.7 VGS = 10V ––– ––– ––– ––– pF   VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.7 Diode Characteristics   Symbol IS ISM 3 A V D G S TJ = 25°C,IS = 96A,VGS = 0V  V/ns TJ = 175°C,IS =96A,VDS = 135V TJ = 25°C VDD = 115V ns TJ = 125°C IF = 96A, TJ = 25°C di/dt = 100A/µs  nC TJ = 125°C   A TJ = 25°C  2017-05-12 IRG5K50P5K50PM06E 1000 1000 100 BOTTOM VGS 15V 10V 6.0V 5.5V 5.0V 4.5V 4.3V 4.0V 10 4.0V  60µs PULSE WIDTH Tj = 25°C BOTTOM 100 1 10 4.0V  60µs PULSE WIDTH Tj = 175°C 10 1 0.1 0.1 100 100 3.5 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) 10 Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics TJ = 175°C 10 TJ = 25°C 1 V DS = 50V  60µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 ID = 96A V GS = 10V 3.0 2.5 2.0 1.5 1.0 0.5 6.0 -60 -40 -20 V GS, Gate-to-Source Voltage (V) 100000 Fig 6. Normalized On-Resistance vs. Temperature V GS, Gate-to-Source Voltage (V) C oss = C ds + C gd Ciss 1000 20 40 60 80 100 120 140 160 180 14 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 10000 0 TJ , Junction Temperature (°C) Fig 5. Typical Transfer Characteristics C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Coss Crss ID= 96A 12 V DS= 108V V DS= 68V V DS= 27V 10 8 6 4 2 0 100 1 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 6.0V 5.5V 5.0V 4.5V 4.3V 4.0V TOP ID, Drain-to-Source Current (A) TOP ID, Drain-to-Source Current (A) IRF135SA204 0 50 100 150 200 250 300 QG Total Gate Charge (nC) Fig 8. Typical Gate Charge vs.Gate-to-Source Voltage 2017-05-12 IRG5K50P5K50PM06E IRF135SA204 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100µsec TJ = 175°C 100 TJ = 25°C 10 1 10msec 100 1msec 10 OPERATION IN THIS AREA LIMITED BY RDS(on) 1 V GS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 0.1 1.2 1 10 100 V DS, Drain-toSource Voltage (V) V SD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 170 6.0 Id = 5.0mA 5.0 160 4.0 Energy (µJ) V (BR)DSS, Drain-to-Source Breakdown Voltage (V) DC Tc = 25°C Tj = 175°C Single Pulse 150 3.0 2.0 140 1.0 0.0 130 0 -60 -40 -20 0 20 40 60 80 100120140160180 40 60 80 100 120 140 V DS, Drain-to-Source Voltage (V) TJ , Temperature ( °C ) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m ) 20 Fig 12. Typical Coss Stored Energy 16.0 V GS = 4.5V V GS = 5.5V V GS = 6.0V V GS = 8.0V 12.0 V GS = 10V 8.0 4.0 0 50 100 150 200 ID, Drain Current (A) Fig 13. Typical On–Resistance vs. Drain Current 5 2017-05-12 IRG5K50P5K50PM06E IRF135SA204 Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 100 0.01 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width 700 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 96A EAR , Avalanche Energy (mJ) 600 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav   2017-05-12 IRG5K50P5K50PM06E 40 4.0 IF = 64A V R = 115V TJ = 25°C 3.5 30 TJ = 125°C 3.0 IRRM (A) V GS(th) Gate threshold Voltage (V) IRF135SA204 ID = 250µA ID = 1.0mA 2.5 20 ID = 10mA ID = 1.0A 2.0 10 1.5 1.0 -75 -50 -25 0 25 50 75 0 100 125 150 175 0 200 TJ , Temperature ( °C ) 600 800 1000 diF /dt (A/µs) Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 1400 40 IF = 96A V R = 115V 1200 TJ = 25°C TJ = 125°C 1000 QRR (nC) 30 IRRM (A) 400 20 IF = 64A V R = 115V TJ = 25°C TJ = 125°C 800 600 400 10 200 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt 1400 IF = 96A V R = 115V TJ = 25°C 1200 QRR (nC) 1000 TJ = 125°C 800 600 400 200 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 2017-05-12 IRG5K50P5K50PM06E IRF135SA204 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD  Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 Qgd Qgodr Fig 25b. Gate Charge Waveform 2017-05-12 IRG5K50P5K50PM06E IRF135SA204 D2PAK-7Pin Package Outline (Dimensions are shown in millimeters (inches)) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2017-05-12 IRG5K50P5K50PM06E IRF135SA204 D2Pak-7Pin Part Marking Information D2PAK-7Pin Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2017-05-12 IRG5K50P5K50PM06E IRF135SA204 Qualification Information†   Industrial Qualification Level   (per JEDEC JESD47F) †† Moisture Sensitivity Level D2PAK-7Pin MSL1 Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 05/12/2017 Comments    Corrected package picture added “s” on pin number 2 - page 1. Changed datasheet with Infineon logo - all pages. Added disclaimer on last page Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2017-05-12 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.