IRF150P221
MOSFET
StrongIRFETª
PG-TO247-3
Features
•VerylowRDS(on)
•ExcellentgatechargexRDS(on)(FOM)
•OptimizedQrr
•175°Coperatingtemperature
•ProductvalidationaccordingtoJEDECstandard
•Optimizedforbroadestavailabilityfromdistributionpartners
1
2
3
Benefits
•Reducedconductionlosses
•Idealforhighswitchingfrequency
•Lowerovershootvoltage
•Increasedreliabilityversus150°Cratedparts
•Halogen-freeaccordingtoIEC61249-2-21
Drain
Pin 2
Gate
Pin 1
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
150
V
RDS(on),typ
3.6
mΩ
RDS(on),max
4.5
mΩ
ID(SiliconLimited)
186
A
QG(0V..10V)
80
nC
Type/OrderingCode
Package
IRF150P221
PG-TO247-3
Final Data Sheet
Source
Pin 3
Marking
IRF150P221
1
RelatedLinks
-
Rev.2.1,2020-02-03
StrongIRFETª
IRF150P221
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.1,2020-02-03
StrongIRFETª
IRF150P221
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
186
132
A
VGS=10V,TC=25°C(siliconlimited)
VGS=10V,TC=100°C(silicon
limited)1)
-
507
A
TC=25°C
-
-
420
mJ
ID=100A,RGS=50Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
341
3.8
W
TC=25°C
TA=25°C,RTHJA=40°C/W3)
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current1)
ID,pulse
-
Avalanche energy, single pulse2)
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case4)
Values
Min.
Typ.
Max.
RthJC
-
-
0.44
°C/W -
Thermal resistance, junction -Ambient
RthJA
-
-
40
°C/W -
Case-to-Sink, Flat Greased Surface
RthCS
-
0.24
-
°C/W -
1)
See Diagram 3 for more detailed information
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4)
RthJC is measured at TJ approximately 90°C.
2)
Final Data Sheet
3
Rev.2.1,2020-02-03
StrongIRFETª
IRF150P221
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
V(BR)DSS
Breakdown voltage temperature
coefficient
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
60
-
mV/°C ID=2mA,referencedto25°C
3
-
4.6
V
VDS=VGS,ID=264µA
IDSS
-
-
1
100
µA
VDS=120V,VGS=0V,Tj=25°C
VDS=120V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
3.6
4.5
mΩ
VGS=10V,ID=100A
Gate resistance
RG
-
1.1
-
Ω
-
Transconductance
gfs
-
150
-
S
|VDS|≥2|ID|RDS(on)max,ID=100A
Unit
Note/TestCondition
Min.
Typ.
Max.
150
-
dV(BR)DSS/dTj -
Gate threshold voltage
VGS(th)
Zero gate voltage drain current
1)
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
6000
-
pF
VGS=0V,VDS=75V,f=1MHz
Coss
-
1500
-
pF
VGS=0V,VDS=75V,f=1MHz
Reverse transfer capacitance
Crss
-
34
-
pF
VGS=0V,VDS=75V,f=1MHz
Turn-on delay time
td(on)
-
23
-
ns
VDD=75V,VGS=10V,ID=100A,
RG,ext=2.7Ω
Rise time
tr
-
90
-
ns
VDD=75V,VGS=10V,ID=100A,
RG,ext=2.7Ω
Turn-off delay time
td(off)
-
29
-
ns
VDD=75V,VGS=10V,ID=100A,
RG,ext=2.7Ω
Fall time
tf
-
62
-
ns
VDD=75V,VGS=10V,ID=100A,
RG,ext=2.7Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Output capacitance
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
35
-
nC
VDD=75V,ID=100A,VGS=0to10V
Qg(th)
-
23
-
nC
VDD=75V,ID=100A,VGS=0to10V
Gate to drain charge
Qgd
-
16
-
nC
VDD=75V,ID=100A,VGS=0to10V
Switching charge
Qsw
-
28
-
nC
VDD=75V,ID=100A,VGS=0to10V
Gate charge total
Qg
-
80
100
nC
VDD=75V,ID=100A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.7
-
V
VDD=75V,ID=100A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
64
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
225
-
nC
VDD=75V,VGS=0V
1)
1)
2)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2020-02-03
StrongIRFETª
IRF150P221
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
186
A
TC=25°C
-
507
A
TC=25°C
-
-
1.1
V
VGS=0V,IF=100A,Tj=25°C
trr
-
57
-
ns
VR=128V,IF=100A,diF/dt=100A/µs
Qrr
-
74
-
nC
VR=128V,IF=100A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.1,2020-02-03
StrongIRFETª
IRF150P221
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
350
200
300
160
120
200
ID[A]
Ptot[W]
250
150
80
100
40
50
0
0
25
50
75
100
125
150
0
175
25
50
75
TC[°C]
100
125
150
175
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
10 µs
100 µs
102
100
ID[A]
ZthJC[K/W]
1 ms
101
10 ms
100
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-1
10-2
DC
10-1
10-2
10-3
10-1
100
101
102
103
10-4
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
101
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.1,2020-02-03
StrongIRFETª
IRF150P221
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
510
12
5V
5.5 V
6V
7V
8V
10 V
12 V
408
10
6V
ID[A]
RDS(on)[mΩ]
306
204
7V
8
6
8V
10 V
102
4
12 V
0
0
1
2
3
4
2
5
0
110
220
VDS[V]
330
440
550
ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
510
14
12
408
10
ID[A]
RDS(on)[mΩ]
306
204
8
125 °C
6
102
0
175 °C
0
2
4
25 °C
6
4
8
10
VGS[V]
4
6
8
10
12
14
16
18
20
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
2
25 °C
RDS(on)=f(VGS),ID=100A;parameter:Tj
7
Rev.2.1,2020-02-03
StrongIRFETª
IRF150P221
Diagram10:Typ.gatethresholdvoltage
2.4
5
2.0
4
2640 µA
1.6
3
VGS(th)[V]
RDS(on)(normalizedto25°C)
Diagram9:Normalizeddrain-sourceonresistance
1.2
0.8
264 µA
2
1
0.4
-75
-25
25
75
125
0
-75
175
-25
25
Tj[°C]
75
125
175
Tj[°C]
RDS(on)=f(Tj),ID=100A,VGS=10V
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
5
103
10
25 °C
175 °C
104
Ciss
Coss
IF[A]
C[pF]
102
3
10
101
102
Crss
101
0
25
50
75
100
125
150
100
0.2
0.4
0.6
VDS[V]
1.0
1.2
1.4
1.6
1.8
2.0
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.8
IF=f(VSD);parameter:Tj
8
Rev.2.1,2020-02-03
StrongIRFETª
IRF150P221
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
3
10
14
30 V
75 V
120 V
12
102
10
25 °C
VGS[V]
IAV[A]
8
1
10
100 °C
6
150 °C
4
100
2
10-1
10-1
100
101
102
103
tAV[µs]
0
0
20
40
60
80
100
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
172
170
168
VBR(DSS)[V]
166
164
162
160
158
156
154
-75
-25
25
75
125
175
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.1,2020-02-03
StrongIRFETª
IRF150P221
5PackageOutlines
Figure1OutlinePG-TO247-3,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.1,2020-02-03
StrongIRFETª
IRF150P221
RevisionHistory
IRF150P221
Revision:2020-02-03,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.0
2018-09-21
Release of preliminary version
2.0
2018-09-21
Release of final version
2.1
2020-02-03
Update from IR MOSFT/StrongIRFETTM to StrongIRFETTM
Trademarks
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Final Data Sheet
11
Rev.2.1,2020-02-03