IRF200P223

IRF200P223 MOSFET StrongIRFET™   D Applications        VDSS 200V RDS(on) typ. 9.5m G UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits ID    Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Pb-Free ; RoHS Compliant ; Halogen-Free Base part number Package Type IRF200P223 TO-247AC Quantity 25 S Source Orderable Part Number IRF200P223 100 30 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) I D = 60A 25 TJ = 125°C 15 TJ = 25°C 10 D Drain 120 35 20 G Gate Standard Pack Form Tube   80 60 40 20 0 5 2 4 6 8 10 12 14 16 18 25 20 Typical On-Resistance vs. Gate Voltage Final Datasheet www.infineon.com 50 75 100 125 150 175 TC , Case Temperature (°C) VGS, Gate -to -Source Voltage (V) Figure 1 100A TO-247AC IRF200P223 Benefits  11.5m max S Figure 2 Maximum Drain Current vs. Case Temperature Please read the important Notice and Warnings at the end of this document V2.1 2020-01-07 StrongIRFET™ IRF200P223 Table of Contents Table of Contents Applications Benefits …..………………………………………………………………………...……………..……………1 …..………………………………………………………………………...……………..…………….1 Ordering Table ….……………………………………………………………………………………………………1 Table of Contents ….………………………………………………………………………………………………...2 1 Parameters ………………………………………………………………………………………………3 2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4 3 Electrical characteristics ………………………………………………………………………………5 4 Electrical characteristic diagrams ……………………………………………………………………6 Package Information ………………………………………………………………………………………………14 Qualification Information ……………………………………………………………………………………………15 Revision History …………………………………………………………………………………………..…………16 Final Datasheet 2  V2.1 2020-01-07 StrongIRFET™ IRF200P223 Parameters 1 Parameters Table1 Key performance parameters Parameter Values Units VDS 200 V RDS(on) max  11.5 m ID 100 A Final Datasheet 3  V2.1 2020-01-07 StrongIRFET™ IRF200P223 Maximum ratings and thermal characteristics 2 Maximum ratings and thermal characteristics Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw ID ID IDM PD Table 4 Unit TC = 25°C, VGS @ 10V TC = 100°C, VGS @ 10V TC = 25°C TC = 25°C TC = 25°C - 100 71 400 313 2.1 ± 20 - -55 to + 175 - - 300 - - 10 lbf·in (1.1 N·m) VGS TJ TSTG Table 3 Thermal characteristics Parameter Symbol Junction-to-Case  RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA Values Conditions TJ approximately 90°C - Min. - Typ. 0.24 - A W W/°C V Max. 0.48 40 °C - Unit °C/W Avalanche characteristics Parameter Symbol Values Single Pulse Avalanche Energy  EAS (Thermally limited) 429 Single Pulse Avalanche Energy  EAS (Thermally limited) 541 Avalanche Current  IAR Repetitive Avalanche Energy  EAR See Fig 16, 17, 23a, 23b Unit mJ   A mJ Notes: Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.24mH, RG = 50, IAS = 60A, VGS =10V. ISD  60A, di/dt  2330A/µs, VDD V(BR)DSS, TJ  175°C. Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V. Final Datasheet 4  V2.1 2020-01-07 StrongIRFET™ IRF200P223 Electrical characteristics 3 Electrical characteristics Table 5 Static characteristics Parameter Symbol Conditions Min. Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 200 Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 1mA  Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 60A Gate Threshold Voltage VGS(th) Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage Gate Resistance Table 6 VDS = VGS, ID = 270µA VDS =160V, VGS =0V 2.0 - - 4.0 1.0 VDS =160V,VGS = 0V,TJ =125°C - - 100 IGSS RG VGS = 20V - 2.7 100 - Symbol Conditions gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss VDS = 50V, ID =60A VDD = 130V ID = 60A RG = 2.7 VGS = 10V   VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.7 Min. 93 - Coss eff.(ER) VGS = 0V, VDS = 0V to 160V  - 537 - Coss eff.(TR) VGS = 0V, VDS = 0V to 160V  - 783 - Forward Trans conductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) V V/°C m V µA nA   ID = 60A VDS = 100V VGS = 10V Values Typ. Max. 68 102 25 13 55 16 66 55 62 5094 628 8.7 - Unit S nC ns pF Reverse Diode Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Peak Diode Recovery dv/dt  Symbol IS ISM VSD dv/dt Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM Final Datasheet Unit Dynamic characteristics Parameter Table 7 Values Typ. Max. 0.10 9.5 11.5 Conditions MOSFET symbol showing the integral reverse p-n junction diode. Min. D - - 100 - - 400 - 15 105 150 283 580 4.1 1.2 - G S TJ = 25°C, IS = 60A,VGS = 0V  TJ = 175°C, IS = 60A,VDS = 200V TJ = 25°C VDD = 170V TJ = 125°C  IF = 60A, TJ = 25°C di/dt = 100A/µs  TJ = 125°C  TJ = 25°C 5  Values Typ. Max. Unit A V V/ns ns nC A V2.1 2020-01-07 StrongIRFET™ IRF200P223 Electrical characteristic diagrams 4 Electrical characteristic diagrams 1000 100 BOTTOM VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V TOP ID, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) TOP 1000 VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V 10 4.0V 1 100 BOTTOM 4.0V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 0.1 0.1 1 10 1 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V)   Figure 3 Figure 4 Typical Output Characteristics Typical Output Characteristics   3.0 100 TJ = 175°C TJ = 25°C 10 1.0 VDS = 50V 60µs PULSE WIDTH I D = 60A 2.0 1.5 1.0 0.5 0.0 0.10 2 3 4 5 6 7 -60 8 Typical Transfer Characteristics Final Datasheet -20 20 60 100 140 180 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Figure 5 VGS = 10V 2.5 (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 1000 Figure 6 6  Normalized On-Resistance vs. Temperature V2.1 2020-01-07 StrongIRFET™ IRF200P223 Electrical characteristic diagrams 1000000 VGS Ciss Crss Coss C, Capacitance (pF) 100000 14 = 0V, f = 1 MHZ = C gs + C gd, C ds SHORTED = C gd = C ds + C gd 10000 Ciss 1000 Coss 100 I D= 60A 12 VGS, Gate-to-Source Voltage (V)   Crss 10 VDS= 160V 10 VDS= 100V 8 6 VDS= 40V 4 2 1 1 10 100 0 1000 0 10 20 VDS, Drain-to-Source Voltage (V) Figure 7 30 40 50 60 70 80 90 100 Q G, Total Gate Charge (nC) Typical Capacitance vs. Drain-to-Source Voltage Figure 8 Typical Gate Charge vs. Gate-to-Source Voltage   ISD, Reverse Drain Current (A) 1000 100 TJ = 175°C 10 TJ = 25°C 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V) Figure 9 Final Datasheet Typical Source-Drain Diode Forward Voltage 7  V2.1 2020-01-07 StrongIRFET™ IRF200P223 Electrical characteristic diagrams   I D, Drain-to-Source Current (A) 1000 100 100µsec 10 1msec OPERATION IN THIS AREA LIMITED BY R DS(on) 1 10msec DC 0.1 Tc = 25°C Tj = 175°C Single Pulse 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Figure 10 Maximum Safe Operating Area 10 235 Id = 1.0mA 8 225 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V)   215 205 6 4 2 0 195 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Temperature ( °C ) Figure 11 Final Datasheet 20 40 60 80 100 120 140 160 180 200 220 VDS, Drain-to-Source Voltage (V) Drain-to-Source Breakdown Voltage Figure 12 8  Typical Coss Stored Energy V2.1 2020-01-07 StrongIRFET™ IRF200P223 Electrical characteristic diagrams 4.5 VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 14 VGS(th), Gate threshold Voltage (V) RDS(on), Drain-to -Source On Resistance (m ) 16 12 10 4.0 3.5 3.0 2.5 2.0 I D = 270µA ID = 1.0mA I D = 1.0A 1.5 1.0 8 0 25 50 75 100 125 150 175 -75 -50 -25 200 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) I D, Drain Current (A)   Figure 13 Typical On-Resistance vs. Drain Current Figure 14 Threshold Voltage vs. Temperature   Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Figure 15 Final Datasheet Maximum Effective Transient Thermal Impedance, Junction-to-Case 9  V2.1 2020-01-07 StrongIRFET™ IRF200P223 Electrical characteristic diagrams   Avalanche Current (A) 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Figure 16   Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 1.0% Duty Cycle I D = 60A 400 300 200 100 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.infineon.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. DT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Starting T J , Junction Temperature (°C) Figure 17 Final Datasheet Maximum Avalanche Energy vs. Temperature 10  V2.1 2020-01-07 StrongIRFET™ IRF200P223 Electrical characteristic diagrams   50 50 I F = 40A VR = 170V TJ = 25°C TJ = 125°C 40 30 20 10 30 20 10 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) diF /dt (A/µs) Figure 18   VR = 170V TJ = 25°C TJ = 125°C 40 IRRM (A) IRRM (A) I F = 60A Typical Recovery Current vs. dif/dt Figure 19 2000 Typical Recovery Current vs. dif/dt 2500 I F = 40A I F = 60A VR = 170V TJ = 25°C TJ = 125°C QRR (nC) 1500 QRR (nC) 2000 1000 VR = 170V TJ = 25°C TJ = 125°C 1500 1000 500 500 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) Figure 20 Final Datasheet Typical Stored Charge vs. dif/dt diF /dt (A/µs) Figure 21 11  Typical Stored Charge vs. dif/dt V2.1 2020-01-07 StrongIRFET™ IRF200P223 Electrical characteristic diagrams   Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs   Figure 23a Final Datasheet Unclamped Inductive Test Circuit Figure 23b 12  Unclamped Inductive Waveforms V2.1 2020-01-07 StrongIRFET™ IRF200P223 Electrical characteristic diagrams   Figure 24a Switching Time Test Circuit Figure 24b Switching Time Waveforms   Final Datasheet Figure 25a Gate Charge Test Circuit 13  Figure 25b Gate Charge Waveform V2.1 2020-01-07 StrongIRFET™ IRF200P223 Package Information 5 Package Information TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 ASSEMBLY LOT CODE 135H 57 DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Final Datasheet 14  V2.1 2020-01-07 StrongIRFET™ IRF200P223 Qualification Information 6 Qualification Information Qualification Information Industrial (per JEDEC JESD47F) † Qualification Level Moisture Sensitivity Level TO-247AC Yes RoHS Compliant † N/A Applicable version of JEDEC standard at the time of product release. Final Datasheet 15  V2.1 2020-01-07 StrongIRFET™ IRF200P223 Revision History Revision History Major changes since the last revision Page or Reference Revision Date Description of changes All pages 2.0 2017-03-16  All pages 2.1 2020-01-07 Final Datasheet   First release data sheet. Update from “IR MOSFT/StrongIRFET™” to “StrongIRFET™” -all pages Update Package picture –page1 16  V2.1 2020-01-07 Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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