IRF250P225

IRF250P225 MOSFET StrongIRFET™   G Applications        D UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits   Package Type IRF250P225 TO-247AC RDS(on), Drain-to -Source On Resistance (m )   Standard Pack Form Tube Quantity 25 75 22m 69A D Drain S Source Orderable Part Number IRF250P225 75 I D = 41A 65 60 55 45 TJ = 125°C 35 25 TJ = 25°C 15 4 6 8 10 12 14 16 18 Typical On-Resistance vs. Gate Voltage www.infineon.com 30 0 20 25 VGS, Gate -to -Source Voltage (V) Final Datasheet 45 15 5 2 Figure 1 18m ID G Gate Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Pb-Free ; RoHS Compliant ; Halogen-Free Base part number RDS(on) typ. TO-247AC IRF250P225 ID, Drain Current (A)  250V max S Benefits  VDSS 50 75 100 125 150 175 TC , Case Temperature (°C) Figure 2 Maximum Drain Current vs. Case Temperature Please read the important Notice and Warnings at the end of this document V2.1 2020-01-07 StrongIRFET™ IRF250P225 Table of Contents Table of Contents Applications Benefits …..………………………………………………………………………...……………..……………1 …..………………………………………………………………………...……………..…………….1 Ordering Table ….……………………………………………………………………………………………………1 Table of Contents ….………………………………………………………………………………………………...2 1 Parameters ………………………………………………………………………………………………3 2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4 3 Electrical characteristics ………………………………………………………………………………5 4 Electrical characteristic diagrams ……………………………………………………………………6 Package Information ………………………………………………………………………………………………14 Qualification Information ……………………………………………………………………………………………15 Revision History …………………………………………………………………………………………..…………16 Final Datasheet 2 V2.1 2020-01-07 StrongIRFET™ IRF250P225 Parameters 1 Parameters Table1 Key performance parameters Parameter Values Units VDS 250 V RDS(on) max  22 m ID 69 A Final Datasheet 3 V2.1 2020-01-07 StrongIRFET™ IRF250P225 Maximum ratings and thermal characteristics 2 Maximum ratings and thermal characteristics Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw ID ID IDM PD Table 4 Unit TC = 25°C, VGS @ 10V TC = 100°C, VGS @ 10V TC = 25°C TC = 25°C TC = 25°C - 69 49 276 313 2.1 ± 20 - -55 to + 175 - - 300 - - 10 lbf·in (1.1 N·m) VGS TJ TSTG Table 3 Thermal characteristics Parameter Symbol Junction-to-Case  RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA Values Conditions TJ approximately 90°C - Min. - Typ. 0.24 - A W W/°C V Max. 0.48 40 °C - Unit °C/W Avalanche characteristics Parameter Symbol Values Single Pulse Avalanche Energy  EAS (Thermally limited) 444 Single Pulse Avalanche Energy  EAS (Thermally limited) 489 Avalanche Current  IAR Repetitive Avalanche Energy  EAR See Fig 16, 17, 23a, 23b Unit mJ   A mJ Notes: Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.52mH, RG = 50, IAS = 41A, VGS =10V. ISD  41A, di/dt  926A/µs, VDD V(BR)DSS, TJ  175°C. Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 31A, VGS =10V. Final Datasheet 4 V2.1 2020-01-07 StrongIRFET™ IRF250P225 Electrical characteristics 3 Electrical characteristics Table 5 Static characteristics Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 2.5mA  Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 41A Values Unit Typ. Max. V 0.17 V/°C 18 22 m 2.0 4.0 V 1.0 µA 100 Min. 250 - Gate Threshold Voltage VGS(th) Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage Gate Resistance IGSS RG VGS = 20V Symbol Conditions gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss VDS = 50V, ID =41A VDD = 163V ID = 41A RG = 2.7 VGS = 10V   VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.7 Min. 72 - Coss eff.(ER) VGS = 0V, VDS = 0V to 200V  - 372 - Coss eff.(TR) VGS = 0V, VDS = 0V to 200V  - 607 - Table 6 Forward Trans conductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) - 2.7 100 - nA   ID = 41A VDS = 125V VGS = 10V Values Typ. Max. 64 96 24 12 52 17 54 52 36 4897 505 6.1 - Unit S nC ns pF Reverse Diode Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Peak Diode Recovery dv/dt  Symbol IS Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 41A,VGS = 0V  TJ = 175°C, IS = 41A,VDS = 250V TJ = 25°C VDD = 213V TJ = 125°C  IF = 41A, TJ = 25°C di/dt = 100A/µs  TJ = 125°C  TJ = 25°C D Min. Values Typ. Max. - - 69 - - 276 - 25 113 155 427 878 5.7 1.2 - G ISM VSD dv/dt Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM Final Datasheet VDS =200V,VGS = 0V,TJ =125°C Dynamic characteristics Parameter Table 7 VDS = VGS, ID = 270µA VDS =200V, VGS =0V S 5 Unit A V V/ns ns nC A V2.1 2020-01-07 StrongIRFET™ IRF250P225 Electrical characteristic diagrams 4 Electrical characteristic diagrams 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) TOP 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP 10 ID, Drain-to-Source Current (A)   4.5V 100 BOTTOM 4.5V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 1 0.1 1 10 0.1 100 Figure 4 Typical Output Characteristics 1000 Typical Output Characteristics TJ = 175°C TJ = 25°C 10 1.0 VDS = 50V 60µs PULSE WIDTH 0.10 2 3 4 5 6 7 I D = 41A 2.0 1.5 1.0 0.5 0.0 8 -60 -20 20 60 100 140 180 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Typical Transfer Characteristics Final Datasheet VGS = 10V 2.5 (Normalized) 100 Figure 5 100 3.0 RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A)   10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Figure 3 1 Figure 6 6 Normalized On-Resistance vs. Temperature V2.1 2020-01-07 StrongIRFET™ IRF250P225 Electrical characteristic diagrams VGS Ciss Crss Coss C, Capacitance (pF) 100000 14 = 0V, f = 1 MHZ = C gs + C gd, C ds SHORTED = C gd = C ds + C gd 10000 Ciss 1000 Coss 100 I D= 41A 12 VGS, Gate-to-Source Voltage (V)   1000000 Crss 10 VDS= 200V 10 VDS= 125V 8 6 VDS= 50V 4 2 0 1 1 10 100 1000 0 10 20 VDS, Drain-to-Source Voltage (V) Figure 7 40 50 60 70 80 90 100 QG, Total Gate Charge (nC) Typical Capacitance vs. Drain-to-Source Voltage   30 Figure 8 Typical Gate Charge vs. Gate-to-Source Voltage ISD, Reverse Drain Current (A) 1000 100 TJ = 175°C 10 TJ = 25°C 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V) Figure 9 Final Datasheet Typical Source-Drain Diode Forward Voltage 7 V2.1 2020-01-07 StrongIRFET™ IRF250P225 Electrical characteristic diagrams   1000 I D, Drain-to-Source Current (A) 100 100µsec 10 1msec OPERATION IN THIS AREA LIMITED BY R DS(on) 1 10msec DC 0.1 Tc = 25°C Tj = 175°C Single Pulse 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Figure 10 12 300 Id = 2.5mA 290 10 280 8 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V)   Maximum Safe Operating Area 270 6 4 260 2 250 0 240 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VDS, Drain-to-Source Voltage (V) TJ , Temperature ( °C ) Figure 11 Final Datasheet 25 50 75 100 125 150 175 200 225 250 275 Drain-to-Source Breakdown Voltage Figure 12 8 Typical Coss Stored Energy V2.1 2020-01-07 StrongIRFET™ IRF250P225 Electrical characteristic diagrams 4.5 60 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 50 VGS(th), Gate threshold Voltage (V) RDS(on), Drain-to -Source On Resistance (m  )   40 30 20 4.0 3.5 3.0 2.5 I D = 270µA ID = 1.0mA I D = 1.0A 2.0 1.5 1.0 10 0 25 50 75 100 125 150 175 -75 -50 -25 200 25 50 75 100 125 150 175 TJ , Temperature ( °C ) I D, Drain Current (A) Figure 13 0 Typical On-Resistance vs. Drain Current Figure 14 Threshold Voltage vs. Temperature   Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Figure 15 Final Datasheet Maximum Effective Transient Thermal Impedance, Junction-to-Case 9 V2.1 2020-01-07 StrongIRFET™ IRF250P225 Electrical characteristic diagrams   Avalanche Current (A) 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Figure 16   Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 1.0% Duty Cycle I D = 41A 400 300 200 100 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.infineon.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. DT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Starting T J , Junction Temperature (°C) Figure 17 Final Datasheet Maximum Avalanche Energy vs. Temperature 10 V2.1 2020-01-07 StrongIRFET™ IRF250P225 Electrical characteristic diagrams   60 60 I F = 41A 50 VR = 213V 50 VR = 213V 40 TJ = 25°C TJ = 125°C 40 TJ = 25°C TJ = 125°C I RRM (A) I RRM (A) I F = 41A 30 20 20 10 10 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) diF /dt (A/µs) Figure 18   Typical Recovery Current vs. dif/dt Figure 19 Typical Recovery Current vs. dif/dt 3500 3000 I F = 28A 2500 VR = 213V 2000 TJ = 25°C TJ = 125°C 3000 2500 QRR (nC) QRR (nC) 30 1500 1000 I F = 41A VR = 213V TJ = 25°C TJ = 125°C 2000 1500 1000 500 500 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) diF /dt (A/µs) Figure 20 Final Datasheet Typical Stored Charge vs. dif/dt Figure 21 11 Typical Stored Charge vs. dif/dt V2.1 2020-01-07 StrongIRFET™ IRF250P225 Electrical characteristic diagrams   Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs   Figure 23a Final Datasheet Unclamped Inductive Test Circuit Figure 23b 12 Unclamped Inductive Waveforms V2.1 2020-01-07 StrongIRFET™ IRF250P225 Electrical characteristic diagrams   Figure 24a Switching Time Test Circuit Figure 24b Switching Time Waveforms Gate Charge Test Circuit Figure 25b Gate Charge Waveform   Figure 25a Final Datasheet 13 V2.1 2020-01-07 StrongIRFET™ IRF250P225 Package Information 5 Package Information TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 ASSEMBLY LOT CODE 135H 57 DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Final Datasheet 14 V2.1 2020-01-07 StrongIRFET™ IRF250P225 Qualification Information 6 Qualification Information Qualification Information Industrial (per JEDEC JESD47F) † Qualification Level Moisture Sensitivity Level TO-247AC Yes RoHS Compliant † N/A Applicable version of JEDEC standard at the time of product release. Final Datasheet 15 V2.1 2020-01-07 StrongIRFET™ IRF250P225 Revision History Revision History Major changes since the last revision Page or Reference Revision Date Description of changes All pages 2.0 2017-03-16  All pages 2.1 2020-01-07 Final Datasheet   First release data sheet. Update from “IR MOSFT/StrongIRFET™” to “StrongIRFET™” -all pages Update Package picture –page1 16 V2.1 2020-01-07 Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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