IRF300P226

IRF300P226 MOSFET StrongIRFET™   D       300V RDS(on) typ. 16m G Applications  VDSS 19m max ID S UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits 100A TO-247AC IRF300P226 Benefits    Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Pb-Free ; RoHS Compliant ; Halogen-Free Base part number Package Type IRF300P226 TO-247AC RDS(on), Drain-to -Source On Resistance (m )   105 G Gate Standard Pack Form Tube D Drain Quantity 25 S Source Orderable Part Number IRF300P226   125 I D = 45A 85 100 ID, Drain Current (A)  65 45 TJ = 125°C 25 TJ = 25°C 4 6 8 10 12 14 16 50 25 5 2 75 18 20 0 25 VGS, Gate -to -Source Voltage (V) Figure 1 Typical On-Resistance vs. Gate Voltage Final Datasheet www.infineon.com 50 75 100 125 150 175 TC , Case Temperature (°C) Figure 2 Maximum Drain Current vs. Case Temperature Please read the important Notice and Warnings at the end of this document V2.2 2020-01-07 StrongIRFET™ IRF300P226 Table of Contents Table of Contents Applications Benefits …..………………………………………………………………………...……………..……………1 …..………………………………………………………………………...……………..…………….1 Ordering Table ….……………………………………………………………………………………………………1 Table of Contents ….………………………………………………………………………………………………...2 1 Parameters ………………………………………………………………………………………………3 2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4 3 Electrical characteristics ………………………………………………………………………………5 4 Electrical characteristic diagrams ……………………………………………………………………6 Package Information ………………………………………………………………………………………………14 Qualification Information ……………………………………………………………………………………………15 Revision History …………………………………………………………………………………………..…………16 Final Datasheet 2 V2.2 2020-01-07 StrongIRFET™ IRF300P226 Parameters 1 Parameters Table1 Key performance parameters Parameter Values Units VDS 300 V RDS(on) max  19 m ID 100 A Final Datasheet 3 V2.2 2020-01-07 StrongIRFET™ IRF300P226 Maximum ratings and thermal characteristics 2 Maximum ratings and thermal characteristics Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified) Conditions Parameter Symbol Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw 100 71 375 556 3.7 W W/°C TJ = 175°C, IS = 22A, VDS = 150V 6.0 V/ns VGS TJ TSTG - ± 20 V - -55 to + 175 - - 300 - - 10 lbf·in (1.1 N·m) ID ID IDM PD dv/dt Table 3 Thermal characteristics Parameter Symbol Junction-to-Case  RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA Table 4 Unit TC = 25°C, VGS @ 10V TC = 100°C, VGS @ 10V TC = 25°C TC = 25°C TC = 25°C Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery  Values Conditions TJ approximately 90°C - Min. - Typ. 0.24 - A °C Max. 0.27 40 - Unit °C/W Avalanche characteristics Parameter Single Pulse Avalanche Energy  Avalanche Current  Symbol Values Unit EAS (Thermally limited) IAR 1559 mJ   A EAR Repetitive Avalanche Energy  See Fig 16, 17, 23a, 23b mJ Notes: Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 7.8mH, RG = 50, IAS = 20A, VGS = 10V. ISD  22A, di/dt  1000A/µs, VDD V(BR)DSS, TJ  175°C. Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C. Final Datasheet 4 V2.2 2020-01-07 StrongIRFET™ IRF300P226 Electrical characteristics 3 Electrical characteristics Table 5 Static characteristics Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 2.5mA  Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 45A Values Unit Typ. Max. V 0.12 V/°C 16 19 m 2.0 4.0 V 10 µA 300 Min. 300 - Gate Threshold Voltage VGS(th) Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage Gate Resistance IGSS RG VGS = 20V Symbol Conditions gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss VDS = 50V, ID = 45A VDD = 150V ID = 45A RG = 2.7 VGS = 10V   VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.7 Coss eff.(ER) VGS = 0V, VDS = 0V to 240V  - 552 - Coss eff.(TR) VGS = 0V, VDS = 0V to 240V  - 961 - Table 6 Forward Trans conductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) 1.3 200 - nA   Values Min. Typ. Max. 97 127 191 44 24 103 25 44 79 32 10030 863 3.8 - ID = 45A VDS = 150V VGS = 10V Unit S nC ns pF Reverse Diode Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Symbol IS Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 45A,VGS = 0V  TJ = 25°C TJ = 125°C  VDD = 150V TJ = 25°C IF = 45A, TJ = 125°C  di/dt = 100A/µs  TJ = 25°C TJ = 125°C D Min. Values Typ. Max. - - 100 - - 375 - 156 215 521 1145 5.0 7.8 1.2 - G ISM VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM Final Datasheet - Dynamic characteristics Parameter Table 7 VDS = VGS, ID = 270µA VDS = 240V, VGS =0V VDS = 240V,VGS = 0V,TJ =125°C S 5 Unit A V ns nC A V2.2 2020-01-07 StrongIRFET™ IRF300P226 Electrical characteristic diagrams 4 Electrical characteristic diagrams   1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V I D, Drain-to-Source Current (A) TOP 100 BOTTOM TOP I D, Drain-to-Source Current (A)   4.5V 10 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 1 0.1 1 10 0.1 100 1   Figure 4 Typical Output Characteristics               3.2 100 TJ = 175°C 10 TJ = 25°C 1.0 VDS = 50V 60µs PULSE WIDTH 0.10 2 3 4 5 6 VGS = 10V 2.4 2.0 1.6 1.2 0.8 0.4 0.0 7 -60 -20 20 60 100 140 180 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Typical Transfer Characteristics Final Datasheet I D = 45A 2.8 (Normalized) RDS(on) , Drain-to-Source On Resistance I D, Drain-to-Source Current (A) Typical Output Characteristics   1000 Figure 5 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Figure 3 10 Figure 6 6 Normalized On-Resistance vs. Temperature V2.2 2020-01-07 StrongIRFET™ IRF300P226 Electrical characteristic diagrams 1000000 VGS Ciss Crss Coss C, Capacitance (pF) 100000 14 = 0V, f = 1 MHZ = C gs + C gd, C ds SHORTED = C gd = C ds + C gd Ciss 10000 1000 Coss 100 I D= 45A 12 VGS, Gate-to-Source Voltage (V)   Crss 10 VDS= 240V 10 VDS= 150V 8 VDS= 60V 6 4 2 0 1 1 10 100 0 1000 25 75 100 125 150 175 200 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Figure 7 50 Typical Capacitance vs. Drain-to-Source Voltage Figure 8 Typical Gate Charge vs. Gate-to-Source Voltage   I SD, Reverse Drain Current (A) 1000 100 TJ = 175°C 10 TJ = 25°C 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V) Figure 9 Final Datasheet Typical Source-Drain Diode Forward Voltage 7 V2.2 2020-01-07 StrongIRFET™ IRF300P226 Electrical characteristic diagrams   I D, Drain-to-Source Current (A) 1000 100µsec 100 1msec 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1 10msec DC Tc = 25°C Tj = 175°C Single Pulse 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Maximum Safe Operating Area 25 360 Id = 2.5mA 350 20 340 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V) Figure 10 330 15 10 320 5 310 0 300 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180   Final Datasheet 100 150 200 250 300 350 VDS, Drain-to-Source Voltage (V) TJ , Temperature ( °C ) Figure 11 50 Drain-to-Source Breakdown Voltage   Figure 12 8 Typical Coss Stored Energy V2.2 2020-01-07 StrongIRFET™ IRF300P226 Electrical characteristic diagrams   4.5 30 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 26 VGS(th), Gate threshold Voltage (V) RDS(on), Drain-to -Source On Resistance (m )   22 18 4.0 3.5 3.0 2.5 I D = 270µA ID = 1.0mA I D = 1.0A 2.0 1.5 1.0 14 0 25 50 75 100 125 150 175 -75 -50 -25 200 25 50 75 100 125 150 175 TJ , Temperature ( °C ) I D, Drain Current (A) Figure 13 0 Typical On-Resistance vs. Drain Current Figure 14 Threshold Voltage vs. Temperature   Thermal Response ( Z thJC ) °C/W 1 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Figure 15 Final Datasheet Maximum Effective Transient Thermal Impedance, Junction-to-Case 9 V2.2 2020-01-07 StrongIRFET™ IRF300P226 Electrical characteristic diagrams   100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Figure 16 Avalanche Current vs. Pulse Width   1800 TOP Single Pulse BOTTOM 1.0% Duty Cycle I D = 20A 1600 EAR , Avalanche Energy (mJ) 1400 1200 1000 800 600 400 200 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.infineon.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. DT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Starting T J , Junction Temperature (°C) Figure 17 Final Datasheet Maximum Avalanche Energy vs. Temperature 10 2020-01-07 StrongIRFET™ IRF300P226 Electrical characteristic diagrams   70 80 I F = 30A 60 VR = 150V TJ = 25°C TJ = 125°C 50 60 50 40 I RRM (A) I RRM (A) 70 30 I F = 45A VR = 150V TJ = 25°C TJ = 125°C 40 30 20 20 10 10 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) Figure 18   Typical Recovery Current vs. dif/dt diF /dt (A/µs) Figure 19   5000 6000 I F = 30A TJ = 25°C TJ = 125°C 3000 QRR (nC) QRR (nC) I F = 45A VR = 150V 4000 Typical Recovery Current vs. dif/dt 2000 5000 VR = 150V 4000 TJ = 25°C TJ = 125°C 3000 2000 1000 1000 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) Figure 20 Final Datasheet Typical Stored Charge vs. dif/dt diF /dt (A/µs) Figure 21 11 Typical Stored Charge vs. dif/dt 2020-01-07 StrongIRFET™ IRF300P226 Electrical characteristic diagrams   Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs   Figure 23a Final Datasheet Unclamped Inductive Test Circuit Figure 23b 12 Unclamped Inductive Waveforms 2020-01-07 StrongIRFET™ IRF300P226 Electrical characteristic diagrams   Figure 24a Switching Time Test Circuit Figure 24b Switching Time Waveforms Gate Charge Test Circuit Figure 25b Gate Charge Waveform   Figure 25a Final Datasheet 13 2020-01-07 StrongIRFET™ IRF300P226 Package Information 5 Package Information TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 ASSEMBLY LOT CODE 135H 57 DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Final Datasheet 14 2020-01-07 StrongIRFET™ IRF300P226 Qualification Information 6 Qualification Information Qualification Information Industrial (per JEDEC JESD47F) † Qualification Level Moisture Sensitivity Level TO-247AC RoHS Compliant † N/A Yes Applicable version of JEDEC standard at the time of product release. Final Datasheet 15 2020-01-07 StrongIRFET™ IRF300P226 Revision History Revision History Major changes since the last revision Page or Reference Revision All pages Date Description of changes 2.0 2017-11-14  First release data sheet. All pages 2.1   2018-08-09   Datasheet updated with RTH from “0.48C/W “to “0.27C/W”-page 4 Corrected fig 2,10,15,16,17 based on Rth change-page1, 8 & 9,10 Corrected ID /IS from “75A” to “100A”-page1,3,4 Corrected IDM /ISM from “300A” to “375A “, PD from “313W” to “556W”, Linear derating from “2.1W/C” to “3.7W/C” –page 3 All pages 2.1 2020-01-07   Update from “IR MOSFT/StrongIRFET™” to “StrongIRFET™” -all pages Update Package picture –page1 Final Datasheet 16 2020-01-07 Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. IMPORTANT NOTICE Edition 2015-05-06 Published by Infineon Technologies AG 81726 Munich, Germany    © 2016 Infineon Technologies AG. All Rights Reserved.    Do you have a question about this document? Email: erratum@infineon.com Document reference The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with