IRF300P227

IRF300P227 MOSFET StrongIRFET™   D         Base part number Package Type IRF300P227 TO-247AC ID G Gate Standard Pack Form Tube   RDS(on), Drain-to -Source On Resistance (m ) 40m 50A TO-247AC IRF300P227 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Pb-Free ; RoHS Compliant ; Halogen-Free   33m max UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits Quantity 25 D Drain S Source Orderable Part Number IRF300P227 60 125 I D = 30A 105 45 85 ID, Drain Current (A)  RDS(on) typ. S Benefits  300V G Applications  VDSS TJ = 125°C 65 45 TJ = 25°C 30 15 25 5 0 2 4 6 8 10 12 14 16 18 20 25 Typical On-Resistance vs. Gate Voltage Final Datasheet www.infineon.com 75 100 125 150 175 TC , Case Temperature (°C) VGS, Gate -to -Source Voltage (V) Figure 1 50 Figure 2 Maximum Drain Current vs. Case Temperature Please read the important Notice and Warnings at the end of this document V2.1 2020-01-07 StrongIRFET™ IRF300P227 Table of Contents Table of Contents Applications Benefits …..………………………………………………………………………...……………..……………1 …..………………………………………………………………………...……………..…………….1 Ordering Table ….……………………………………………………………………………………………………1 Table of Contents ….………………………………………………………………………………………………...2 1 Parameters ………………………………………………………………………………………………3 2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4 3 Electrical characteristics ………………………………………………………………………………5 4 Electrical characteristic diagrams ……………………………………………………………………6 Package Information ………………………………………………………………………………………………14 Qualification Information ……………………………………………………………………………………………15 Revision History …………………………………………………………………………………………..…………16 Final Datasheet 2  V2.1 2020-01-07 StrongIRFET™ IRF300P227 Parameters 1 Parameters Table1 Key performance parameters Parameter Values Units VDS 300 V RDS(on) max  40 m ID 50 A Final Datasheet 3  V2.1 2020-01-07 StrongIRFET™ IRF300P227 Maximum ratings and thermal characteristics 2 Maximum ratings and thermal characteristics Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation ID ID IDM PD Values Unit TC = 25°C, VGS @ 10V TC = 100°C, VGS @ 10V TC = 25°C TC = 25°C 50 35 189 313 W TC = 25°C 2.1 W/°C Linear Derating Factor A Peak Diode Recovery  dv/dt TJ = 175°C, IS = 20A, VDS = 150V 6.0 V/ns Gate-to-Source Voltage VGS - ± 20 V Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw TJ TSTG - -55 to + 175 - - 300 - - 10 lbf·in (1.1 N·m) Table 3 Thermal characteristics Parameter Symbol Junction-to-Case  RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA Table 4 Conditions TJ approximately 90°C - Min. - Typ. 0.24 - Max. 0.48 40 °C - Unit °C/W Avalanche characteristics Parameter Single Pulse Avalanche Energy  Single Pulse Avalanche Energy Tested Value  Symbol Values EAS (Thermally limited) 455 EAS (tested) 451 Avalanche Current  IAR Repetitive Avalanche Energy  EAR See Fig 16, 17, 23a, 23b Unit mJ   A mJ Notes: Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 30A, VGS =10V. ISD  20A, di/dt  1000A/µs, VDD V(BR)DSS, TJ  175°C. Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  This value determined from sample failure population, starting TJ = 25°C, L= 1mH, RG = 50, IAS = 30A, VGS =10V. Final Datasheet 4  V2.1 2020-01-07 StrongIRFET™ IRF300P227 Electrical characteristics 3 Electrical characteristics Table 5 Static characteristics Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 1.0mA  Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 30A Gate Threshold Voltage VGS(th) Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage IGSS Gate Resistance RG Table 6 Forward Trans conductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) VGS = 20V - - 100 nA  - 2.7 -  Values Typ. Max. 71 107 28 13 58 16 43 51 28 4893 425 6.6 - Symbol Conditions gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss VDS = 50V, ID =30A VDD = 150V ID = 30A RG = 2.7 VGS = 10V   VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.7 Min. 62 - Coss eff.(ER) VGS = 0V, VDS = 0V to 240V  - 282 - Coss eff.(TR) VGS = 0V, VDS = 0V to 240V  - 485 - ID = 30A VDS = 150V VGS = 10V Unit S nC ns pF Reverse Diode Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Symbol IS ISM VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM Final Datasheet VDS = 240V,VGS = 0V,TJ =125°C Dynamic characteristics Parameter Table 7 VDS = VGS, ID = 270µA VDS = 240V, VGS =0V Values Unit Typ. Max. V 0.12 V/°C 33 40 m 2.0 4.0 V 10 µA 300 Min. 300 - Conditions MOSFET symbol showing the integral reverse p-n junction diode. Min. D - - 50 - - 189 - 140 199 313 811 3.1 5.5 1.2 - G S TJ = 25°C, IS = 30A,VGS = 0V  TJ = 25°C TJ = 125°C  VDD = 150V TJ = 25°C IF = 30A, TJ = 125°C  di/dt = 100A/µs  TJ = 25°C TJ = 125°C 5  Values Typ. Max. Unit A V ns nC A V2.1 2020-01-07 StrongIRFET™ IRF300P227 Electrical characteristic diagrams 4 Electrical characteristic diagrams 1000   1000 VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V I D, Drain-to-Source Current (A) TOP 100 BOTTOM VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V TOP 10 I D, Drain-to-Source Current (A)   4.0V 100 BOTTOM 4.0V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 1 0.1 1 10 0.1 100   Figure 4 Typical Output Characteristics               Typical Output Characteristics 3.2 100 TJ = 175°C 10 TJ = 25°C 1.0 VDS = 50V 60µs PULSE WIDTH 0.10 2 3 4 5 6 7 Final Datasheet VGS = 10V 2.4 2.0 1.6 1.2 0.8 0.4 0.0 8 -60 VGS, Gate-to-Source Voltage (V) Typical Transfer Characteristics I D = 30A 2.8 (Normalized) RDS(on) , Drain-to-Source On Resistance I D, Drain-to-Source Current (A) 100   1000 Figure 5 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Figure 3 1 -20 20 60 100 140 180 TJ , Junction Temperature (°C) Figure 6 6  Normalized On-Resistance vs. Temperature V2.1 2020-01-07 StrongIRFET™ IRF300P227 Electrical characteristic diagrams   VGS Ciss Crss Coss C, Capacitance (pF) 100000 = 0V, f = 1 MHZ = C gs + C gd, C ds SHORTED = C gd = C ds + C gd 10000 14 Ciss 1000 Coss 100 I D= 30A 12 VGS, Gate-to-Source Voltage (V) 1000000 Crss 10 VDS= 240V 10 VDS= 150V VDS= 60V 8 6 4 2 1 1 10 100 1000 0 0 VDS, Drain-to-Source Voltage (V) Figure 7 10 20 30 40 50 60 70 80 90 Q G, Total Gate Charge (nC) Figure 8 Typical Capacitance vs. Drain-to-Source Voltage Typical Gate Charge vs. Gate-to-Source Voltage   I SD, Reverse Drain Current (A) 1000 100 TJ = 175°C 10 TJ = 25°C 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V) Figure 9 Final Datasheet Typical Source-Drain Diode Forward Voltage 7  V2.1 2020-01-07 StrongIRFET™ IRF300P227 Electrical characteristic diagrams   I D, Drain-to-Source Current (A) 1000 100 100µsec 10 1msec OPERATION IN THIS AREA LIMITED BY R DS(on) 1 10msec DC 0.1 Tc = 25°C Tj = 175°C Single Pulse 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Figure 10 360   12 Id = 1.0mA 350 10 340 8 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V)   Maximum Safe Operating Area 330 6 320 4 310 2 300 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Temperature ( °C ) Figure 11 Final Datasheet Drain-to-Source Breakdown Voltage 50 100 150 200 250 300 350 VDS, Drain-to-Source Voltage (V) Figure 12 8  Typical Coss Stored Energy V2.1 2020-01-07 StrongIRFET™ IRF300P227 Electrical characteristic diagrams   4.5 140 VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 120 100 VGS(th), Gate threshold Voltage (V) RDS(on), Drain-to -Source On Resistance (m )   80 60 40 4.0 3.5 3.0 2.5 I D = 270µA ID = 1.0mA I D = 1.0A 2.0 1.5 1.0 20 0 25 50 75 100 125 150 175 -75 -50 -25 200 25 50 75 100 125 150 175 TJ , Temperature ( °C ) I D, Drain Current (A) Figure 13 0 Typical On-Resistance vs. Drain Current Figure 14 Threshold Voltage vs. Temperature   Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Figure 15 Final Datasheet Maximum Effective Transient Thermal Impedance, Junction-to-Case 9  V2.1 2020-01-07 StrongIRFET™ IRF300P227 Electrical characteristic diagrams   100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Figure 16   Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 1.0% Duty Cycle I D = 30A 400 300 200 100 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.infineon.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. DT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Starting T J , Junction Temperature (°C) Figure 17 Final Datasheet Maximum Avalanche Energy vs. Temperature 10  V2.1 2020-01-07 StrongIRFET™ IRF300P227 Electrical characteristic diagrams   50 60 I F = 20A VR = 150V 40 TJ = 25°C TJ = 125°C 30 I RRM (A) I RRM (A) I F = 30A 20 50 VR = 150V 40 TJ = 25°C TJ = 125°C 30 20 10 10 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) diF /dt (A/µs) Figure 18   2500 Typical Recovery Current vs. dif/dt Figure 19   3000 I F = 20A I F = 30A VR = 150V 2000 TJ = 25°C TJ = 125°C 1500 QRR (nC) QRR (nC) Typical Recovery Current vs. dif/dt 1000 2500 VR = 150V 2000 TJ = 25°C TJ = 125°C 1500 1000 500 500 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) Figure 20 Final Datasheet Typical Stored Charge vs. dif/dt diF /dt (A/µs) Figure 21 11  Typical Stored Charge vs. dif/dt V2.1 2020-01-07 StrongIRFET™ IRF300P227 Electrical characteristic diagrams   Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs   Figure 23a Final Datasheet Unclamped Inductive Test Circuit Figure 23b 12  Unclamped Inductive Waveforms V2.1 2020-01-07 StrongIRFET™ IRF300P227 Electrical characteristic diagrams   Figure 24a Switching Time Test Circuit Figure 24b Switching Time Waveforms Gate Charge Test Circuit Figure 25b Gate Charge Waveform   Figure 25a Final Datasheet 13  V2.1 2020-01-07 StrongIRFET™ IRF300P227 Package Information 5 Package Information TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 ASSEMBLY LOT CODE 135H 57 DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Final Datasheet 14  V2.1 2020-01-07 StrongIRFET™ IRF300P227 Qualification Information 6 Qualification Information Qualification Information Industrial (per JEDEC JESD47F) † Qualification Level Moisture Sensitivity Level TO-247AC Yes RoHS Compliant † N/A Applicable version of JEDEC standard at the time of product release. Final Datasheet 15  V2.1 2020-01-07 StrongIRFET™ IRF300P227 Revision History Revision History Major changes since the last revision Page or Reference Revision All pages 1.0 Date Description of changes 2017-02-27   All pages 1.1 2017-07-20   All pages 2.0 2017-11-14  All pages 2.1 2020-01-07 Final Datasheet   First release data sheet. Updated @ 25c =20A on Avalanche Current vs. Pulse Width fig 16 on page10 Added DV/DT = 6V/ns, Di/Dt = 1000A/us, Tjmax = 175C, VDS = 150V, Id = 20A on page 4 Added IRRM = 5.5A @ 125c on page 5. First release final datasheet. Update from “IR MOSFT/StrongIRFET™” to “StrongIRFET™” -all pages Update Package picture –page1 16  V2.1 2020-01-07 Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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