IRF3515STRR

PD- 91899B IRF3515S IRF3515L SMPS MOSFET HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) VDSS RDS(on) max ID 0.045Ω 41A 150V l D2 Pak IRF3515S TO-262 IRF3515L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 41 29 164 200 1.3 ± 30 4.3 -55 to + 175 Units A W W/°C V V/ns °C 300 (1.6mm from case ) Applicable Off Line SMPS Topologies l Telcom 48V input DC/DC Active Clamp Reset Forward Converter Notes  through … www.irf.com are on page 10 1 10/28/99 IRF3515S/L Static @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage V(BR)DSS ∆V(BR)DSS/∆TJ Min. 150 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.21 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.045 Ω VGS = 10V, ID = 25A „ 4.5 V VDS = VGS, ID = 250µA 25 VDS = 150V, VGS = 0V µA 250 VDS = 120V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 15 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 17 120 34 63 2260 530 170 3330 230 280 Max. Units Conditions ––– S VDS = 50V, ID = 25A 107 ID = 25A 23 nC VDS = 120V 65 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 75V ––– ID = 25A ns ––– RG = 2.5Ω ––– RD = 3.0Ω,See Fig. 10 „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 120V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 670 25 20 mJ A mJ Typ. Max. Units ––– ––– 0.75 40 °C/W Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted, steady-state)* Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 41 ––– ––– showing the A G integral reverse ––– ––– 164 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V „ ––– 200 300 ns TJ = 25°C, IF = 25A ––– 1.6 2.4 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF3515S/L 1000 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 1 5.0V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 10 5.0V 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 100 TJ = 175 ° C 10 TJ = 25 ° C V DS = 50V 20µs PULSE WIDTH 6 8 10 12 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 4 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 1 20µs PULSE WIDTH TJ = 175 °C 1 0.1 14 ID = 41A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF3515S/L VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) Coss = Cds + Cgd 10000 Ciss 1000 Coss Crss VGS , Gate-to-Source Voltage (V) 20 100000 10 VDS = 120V VDS = 75V VDS = 30V 16 12 8 4 100 1 ID = 25A FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 175 ° C 10 TJ = 25 ° C 100us 1ms 10 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us 100 1.8 10ms TC = 25 ° C TJ = 175 ° C Single Pulse 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF3515S/L 50 VGS 40 I D , Drain Current (A) RD VDS D.U.T. RG + -VDD 30 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC) D = 0.50 0.20 0.1 0.10 Thermal Response 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +T C 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3515S/L D R IV E R L VDS D .U .T RG + V - DD IA S 20V 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 1600 1 5V TOP BOTTOM ID 10A 17A 25A 1200 A 800 400 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) IAS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy Vs. Drain Current QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF D.U.T. + V - DS VGS 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF3515S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETS www.irf.com 7 IRF3515S/L D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 10 .1 6 (.4 00 ) R E F. -B- 4 .6 9 (.18 5) 4 .2 0 (.16 5) 6.47 (.2 55 ) 6.18 (.2 43 ) 3 1 5.49 (.6 10) 1 4.73 (.5 80) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5.28 (.2 08 ) 4.78 (.1 88 ) 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.55 (.0 22) 0.46 (.0 18) 0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) B A M M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E 8 A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK www.irf.com IRF3515S/L TO-262 Package Outline TO-262 Part Marking Information www.irf.com 9 IRF3515S/L D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4.1 0 (.16 1 ) 3.9 0 (.15 3 ) F EE D D IRE C TIO N 1 .8 5 (.0 7 3 ) 1 .6 0 (.06 3) 1 .5 0 (.05 9) 1 1.60 (.45 7) 1 1.40 (.44 9) 1 .6 5 (.0 6 5 ) 0 .3 68 (.0 14 5) 0 .3 42 (.0 13 5) 24.30 (.95 7) 23.90 (.94 1) 1 5.42 (.6 09) 1 5.22 (.6 01) TR L 1 .7 5 (.069 ) 1 .2 5 (.049 ) 10.90 (.42 9) 10.70 (.42 1) 4.7 2 (.13 6) 4.5 2 (.17 8) 1 6.10 (.6 34 ) 1 5.90 (.6 26 ) F E ED D IRE C T IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) M AX. 60.00 (2.362) M IN. NO TES : 1. CO MF OR MS TO EIA-418. 2. CO NT RO LLING D IM EN SIO N: M ILLIM ETER . 3. DIM ENS ION M EASUR ED @ HU B. 4. INC LUD ES F LANG E DIST ORT IO N @ O UT ER EDG E. 30.40 (1.197) MA X. 26.40 (1.039) 24.40 (.961) 4 3 Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ‚ Starting TJ = 25°C, L = 2.2mH RG = 25Ω, IAS = 25A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ƒ ISD ≤ 5.0A, di/dt ≤ 330A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C * When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 10/99 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/