IRF3704LPBF

PD - 95527 IRF3704PbF IRF3704SPbF IRF3704LPbF SMPS MOSFET Applications High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET l VDSS RDS(on) max ID 20V 9.0mΩ 77A… Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current D2Pak IRF3704S TO-220AB IRF3704 TO-262 IRF3704L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. Units 20 ± 20 77 … 64 308 87 61 0.59 -55 to + 175 V V A W W mW/°C °C Thermal Resistance RθJC RθCS RθJA RθJA Parameter Typ. Max. Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)* ––– 0.50 ––– ––– 1.73 ––– 62 40 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through „ are on page 10 www.irf.com 1 7/20/04 IRF3704/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.021 6.3 9.8 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 9.0 VGS = 10V, ID = 15A ƒ mΩ 13.5 VGS = 4.5V, ID = 12A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 42 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 19 8.1 6.4 16 8.4 98 12 5.0 1996 1085 155 Max. Units Conditions ––– S VDS = 10V, ID = 57A ––– ID = 28.4A ––– nC VDS = 10V ––– VGS = 4.5V ƒ 24 VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 28.4A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 216 71 mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– 77… ––– ––– 308 ––– 0.88 ––– 0.82 ––– 38 ––– 45 ––– 41 ––– 50 1.3 ––– 57 68 62 75 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25°C, IS = 35.5A, VGS = 0V ƒ TJ = 125°C, IS = 35.5A, VGS = 0V ƒ TJ = 25°C, IF = 35.5A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 35.5A, VR=20V di/dt = 100A/µs ƒ www.irf.com IRF3704/S/LPbF 1000 VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 100 3.5V 10 100 3.5V 10 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 1 1 0.1 1 VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 10 0.1 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 TJ = 25 ° C TJ = 175 ° C 100 V DS = 15V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 4.0 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 3.0 1 ID = 77A 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF3704/S/LPbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 2500 Ciss 2000 1500 Coss 1000 500 10 VGS , Gate-to-Source Voltage (V) 3000 ID = 28.4A VDS = 10V 8 6 4 2 Crss 0 1 10 0 100 0 10 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 40 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 TJ = 175 ° C 100 10 TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 1.7 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) 2.0 100us 1ms 10 10ms TC = 25 ° C TJ = 175° C Single Pulse 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF3704/S/LPbF LIMITED BY PACKAGE VGS 75 ID , Drain Current (A) RD VDS 90 D.U.T. RG + -VDD 60 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 45 Fig 10a. Switching Time Test Circuit 30 VDS 15 0 90% 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 175 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.020 RDS(on) , Drain-to -Source On Resistance ( Ω) RDS ( on ) , Drain-to-Source On Resistance ( Ω ) IRF3704/S/LPbF VGS = 4.5V 0.015 0.010 VGS = 10V 0.005 0 50 100 150 200 250 0.010 0.009 0.008 ID = 35.5A 0.007 0.006 4.0 300 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) ID , Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2µF QGS .3µF D.U.T. + V - DS QGD 600 VG EAS , Single Pulse Avalanche Energy (mJ) 50KΩ 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test circuit and Waveforms 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V tp I AS DRIVER + - VDD 0.01Ω Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 A ID 11.6A 23.8A BOTTOM 28.4A TOP 500 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) 175 Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF3704/S/LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE www.irf.com PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C 7 IRF3704/S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL R E CT IF IE R L O GO N ote: "P " in as s em bly lin e po s i tion in dicates "L ead-F r ee" P AR T N U M B E R F 53 0 S AS S E M B L Y L O T CO D E D AT E CO D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E 8 P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E www.irf.com IRF3704/S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE www.irf.com PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE 9 IRF3704/S/LPbF D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.5 mH RG = 25Ω, IAS = 28.4 A. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB package … Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/