PD - 93888B
IRF3704
IRF3704S
IRF3704L
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
20V
9.0mΩ
77A
High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l
Very Low RDS(on)
l
Fully Characterized Avalanche Voltage
and Current
D2Pak
IRF3704S
TO-220AB
IRF3704
TO-262
IRF3704L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 20
77
64
308
87
61
0.59
-55 to + 175
V
V
A
W
W
mW/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Typ.
Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)*
–––
0.50
–––
–––
1.73
–––
62
40
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 10
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1
8/22/00
IRF3704/3704S/3704L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.021
6.3
9.8
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
9.0
VGS = 10V, ID = 15A
mΩ
13.5
VGS = 4.5V, ID = 12A
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 16V, VGS = 0V
µA
100
VDS = 16V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
19
8.1
6.4
16
8.4
98
12
5.0
1996
1085
155
Max. Units
Conditions
–––
S
VDS = 10V, ID = 57A
–––
ID = 28.4A
–––
nC
VDS = 10V
–––
VGS = 4.5V
24
VGS = 0V, VDS = 10V
–––
VDD = 10V
–––
ID = 28.4A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
216
71
mJ
A
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
77
–––
–––
308
––– 0.88
––– 0.82
––– 38
––– 45
––– 41
––– 50
1.3
–––
57
68
62
75
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = 35.5A, VGS = 0V
TJ = 125°C, IS = 35.5A, VGS = 0V
TJ = 25°C, IF = 35.5A, VR=20V
di/dt = 100A/µs
TJ = 125°C, IF = 35.5A, VR=20V
di/dt = 100A/µs
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IRF3704/3704S/3704L
1000
VGS
TOP
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
100
3.5V
10
VGS
10.0V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
3.5V
10
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
2.0
TJ = 175 ° C
100
V DS = 15V
20µs PULSE WIDTH
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
5.0
100
Fig 2. Typical Output Characteristics
1000
4.0
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
3.0
1
ID = 77A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF3704/3704S/3704L
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1500
C
oss
1000
500
ID = 28.4A
VDS = 10V
8
6
4
2
C
rss
0
1
10
0
100
0
10
VDS , Drain-to-Source Voltage (V)
30
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100
I D , Drain Current (A)
TJ = 175 ° C
100
10
TJ = 25 ° C
100us
1ms
10
10ms
1
0.1
0.2
V GS = 0 V
0.5
0.8
1.1
1.4
1.7
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
2500
10
VGS, Gate-to-Source Voltage (V)
3000
2.0
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF3704/3704S/3704L
LIMITED BY PACKAGE
VGS
75
I D , Drain Current (A)
RD
VDS
90
D.U.T.
RG
+
-VDD
60
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
45
Fig 10a. Switching Time Test Circuit
30
VDS
15
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.020
RDS(on) , Drain-to -Source On Resistance (Ω )
R DS ( on ) , Drain-to-Source On Resistance ( Ω )
IRF3704/3704S/3704L
VGS = 4.5V
0.015
0.010
VGS = 10V
0.005
0
50
100
150
200
250
0.010
0.009
0.008
ID = 35.5A
0.007
0.006
4.0
300
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test circuit
and Waveforms
15V
V (B R )D S S
tp
L
VD S
D.U .T
RG
IA S
20 V
tp
IAS
DRIVER
+
- VD D
0.0 1 Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
A
ID
11.6A
23.8A
BOTTOM 28.4A
TOP
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( ° C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF3704/3704S/3704L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .8 7 (.1 1 3 )
2 .6 2 (.1 0 3 )
1 0 .5 4 (.4 1 5 )
1 0 .2 9 (.4 0 5 )
-B -
3 .7 8 (.1 4 9 )
3 .5 4 (.1 3 9 )
4 .6 9 (.1 8 5 )
4 .2 0 (.1 6 5 )
-A -
1 .3 2 (.05 2 )
1 .2 2 (.04 8 )
6 .4 7 (.2 5 5 )
6 .1 0 (.2 4 0 )
4
1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )
1 .1 5 (.0 4 5 )
M IN
1
2
3
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 )
4 .0 6 (.1 6 0 )
3 .5 5 (.1 4 0 )
3X
1 .4 0 (.0 5 5 )
3X
1 .1 5 (.0 4 5 )
L E A D A S S IG N M E N T S
1 - GATE
2 - D R A IN
3 - S OU R CE
4 - D R A IN
0 .93 (.0 3 7 )
0 .69 (.0 2 7 )
0 .3 6 (.0 1 4 )
3X
M
B
A M
0.5 5 (.0 2 2 )
0.4 6 (.0 1 8 )
2 .9 2 (.11 5 )
2 .6 4 (.10 4 )
2 .5 4 (.1 0 0 )
2X
N O TE S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H
3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
ASSEMBLY
LOT CODE
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PART NU M BER
IR F 1 0 1 0
9246
9B
1M
D ATE CO DE
(Y Y W W )
YY = YEAR
W W = W EEK
7
IRF3704/3704S/3704L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.415 )
1 0.29 (.405 )
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
10 .1 6 (.4 00 )
R E F.
-B-
4 .6 9 (.18 5)
4 .2 0 (.16 5)
6.47 (.2 55 )
6.18 (.2 43 )
3
1 5.49 (.6 10)
1 4.73 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5.28 (.2 08 )
4.78 (.1 88 )
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.55 (.0 22)
0.46 (.0 18)
0.9 3 (.0 37 )
3X
0.6 9 (.0 27 )
0.25 (.0 10 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 55 )
1.1 4 (.0 45 )
B A M
M IN IM U M R EC O M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO LD E R D IP .
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS
1 - G ATE
2 - D RA IN
3 - SO U R C E
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.1 5 0)
2.0 8 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
8
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRF3704/3704S/3704L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
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9
IRF3704/3704S/3704L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR R
1 .6 0 (.0 63 )
1 .5 0 (.0 59 )
4 .1 0 ( .1 6 1)
3 .9 0 ( .1 5 3)
F E ED D IRE C TIO N 1 .8 5 (.0 7 3 )
1.60 (.06 3)
1.50 (.05 9)
1 1.60 (.457 )
1 1.40 (.449 )
1 .6 5 (.0 6 5 )
0 .3 68 (.0 145 )
0 .3 42 (.0 135 )
15 .4 2 (.60 9)
15 .2 2 (.60 1)
24.30 (.95 7)
23.90 (.94 1)
TR L
10 .9 0 (.42 9)
10 .7 0 (.42 1)
1.75 (.0 69 )
1.25 (.0 49 )
4 .7 2 (.13 6)
4 .5 2 (.17 8)
16 .1 0 (.63 4)
15 .9 0 (.62 6)
F E ED D IR E CT IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
33 0.00
(14.173)
M AX .
60.00 (2.362)
M IN.
NO TE S :
1. CO MF OR M S TO EIA-418.
2. CO N TRO LLIN G DIM ENSIO N : MILLIM ET ER .
3. DIM ENS ION MEAS URED @ HU B.
4. INC LUD ES FLAN GE DIS TO RTIO N @ OU TER ED G E.
30.40 (1.197)
MA X.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.5 mH
RG = 25Ω, IAS = 28.4 A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is only applied to TO-220AB package
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 8/00
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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