IRF3706STRL

PD - 93936C IRF3706 IRF3706S IRF3706L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET® Power MOSFET VDSS RDS(on) max ID 20V 8.5mΩ 77A† Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current D2Pak IRF3706S TO-220AB IRF3706 TO-262 IRF3706L Absolute Maximum Ratings Parameter Max. Units 20 V Gate-to-Source Voltage ± 12 V Continuous Drain Current, VGS @ 10V 77 VDS Drain-Source Voltage VGS ID @ TC = 25°C h ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current c IDM 54 A 280 e e Maximum Power Dissipation 88 W PD @TC = 100°C Maximum Power Dissipation 44 W 0.59 -55 to + 175 W/°C °C PD @TC = 25°C TJ,TSTG Linear Derating Factor Junction and Storage Temperature Range Thermal Resistance Parameter i RθJC Junction-to-Case Rθcs Case-to-Sink, Flat, Greased Surface RθJA Junction-to-Ambient RθJA Junction-to-Ambient( PCB mount) fi f gi Typ. Max. ––– 1.7 0.50 ––– ––– 62 ––– 40 Units °C/W Notes  through ‡ are on page 11 www.irf.com 1 12/9/04 IRF3706/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficie ––– RDS(on) V Conditions VGS = 0V, ID = 250µA 0.021 ––– ––– 6.0 8.5 V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A Static Drain-to-Source On-Resistan ––– 7.3 10.5 mΩ ––– 11 22 e e = 7.5A e VGS = 4.5V, ID = 12A VGS = 2.8V, ID V GS(th) Gate Threshold Voltage 0.6 ––– 2 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 100 Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 IGSS VDS = 16V, VGS = 0V, TJ = 125°C nA VGS = 12V VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions VDS = 16V, ID = 57A gfs Forward Transconductance 53 ––– ––– S Rg Qg Gate Resistance Total Gate Charge ––– ––– 1.8 23 ––– 35 Ω Qgs Gate-to-Source Charge ––– 8.0 12 nC Qgd Gate-to-Drain ("Miller") Charge ––– 5.5 8.3 VGS = 4.5V Qoss Output Gate Charge ––– 16 24 VGS = 0V, VDS =10V td(on) Turn-On Delay Time ––– 6.8 ––– tr Rise Time ––– 87 ––– td(off) Turn-Off Delay Time ––– 17 ––– tf Fall Time ––– 4.8 ––– Ciss Input Capacitance ––– 2410 ––– Coss Output Capacitance ––– 1070 ––– Crss Reverse Transfer Capacitance ––– 140 ––– ID = 28A VDS = 10V e VDD = 10V ID = 28A ns RG = 1.8Ω e VGS = 4.5V VGS = 0V pF VDS = 10V ƒ = 1.0MHz Avalanche Characteristics E AS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 220 mJ ––– 28 A Diode Characteristics Parameter Min. Typ. Max. Units h IS Continuous Source Current ––– ––– 77 ISM (Body Diode) Pulsed Source Current ––– ––– 280 c A (Body Diode) V SD Diode Forward Voltage ––– 0.88 1.3 ––– 0.82 ––– trr Reverse Recovery Time ––– 45 68 ns Qrr Reverse Recovery Charge ––– 65 98 nC trr Reverse Recovery Time ––– 49 74 ns Qrr Reverse Recovery Charge ––– 78 120 nC 2 Conditions MOSFET symbol V showing the integral reverse p-n junction diode. TJ = 25°C, IS = 36A, V GS = 0V TJ = 125°C, IS = 36A, VGS e = 0V e TJ = 25°C, IF = 36A, VR=20V di/dt = 100A/µs e TJ = 125°C, IF = 36A, VR=20V di/dt = 100A/µs e www.irf.com IRF3706/S/L Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF3706/S/L 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRF3706/S/L V DS VGS RG RD D.U.T. + - VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3706/S/L 15V L VDS D.U.T RG IAS VGS 20V DRIVER + V - DD A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF3706/S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T* ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + ‚ - - „ +  RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test V GS * + - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF3706/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information E XAMP L E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE 8 P AR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com IRF3706/S/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBL ED ON WW 02, 2000 IN THE AS S EMBL Y L INE "L" INTERNATIONAL RECTIF IER LOGO Note: "P" in ass embly line pos ition indicates "Lead-Free" PART NUMBER F530S AS S EMBLY L OT CODE DAT E CODE YEAR 0 = 2000 WEEK 02 L INE L OR INT ERNAT IONAL RECT IF IER LOGO AS SEMBLY LOT CODE www.irf.com PART NUMBER F 530S DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS SEMBLY S IT E CODE 9 IRF3706/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMB LED ON WW 19, 1997 IN T HE AS SEMB LY LINE "C" Note: "P" in ass embly line position indicates "Lead-F ree" INTERNATIONAL RECT IF IER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEE K 19 LINE C OR INTE RNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE 10 PART NUMBER DATE CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASS EMBLY SIT E CODE www.irf.com IRF3706/S/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 0.368 (.0145) 0.342 (.0135) 11.60 (.457) 11.40 (.449) 1.65 (.065) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.54mH, RG = 25Ω, IAS = 28A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 „ This is only applied to TO-220AB pakcage. … This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ‡ Rθ is measured at TJ approximately 90°C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/