IRF3707ZCS

PD - 94784B IRF3707ZCS IRF3707ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET VDSS RDS(on) max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D2Pak IRF3707ZCS Qg 9.7nC TO-262 IRF3707ZCL Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 42 IDM Pulsed Drain Current 230 PD @TC = 25°C Maximum Power Dissipation 57 PD @TC = 100°C Maximum Power Dissipation 28 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range h h c A W 0.38 -55 to + 175 Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw W/°C °C 300 (1.6mm from case) x x 10 lbf in (1.1 N m) Thermal Resistance Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) g Typ. Max. Units ––– 2.653 °C/W ––– 40 Notes  through † are on page 11 www.irf.com 1 12/04/03 IRF3707ZCS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.023 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 7.5 9.5 mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 21A ––– 10 12.5 VGS = 4.5V, ID = 17A V VGS = 0V, ID = 250µA VGS(th) Gate Threshold Voltage 1.35 1.80 2.25 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.3 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 Forward Transconductance 81 ––– ––– Total Gate Charge ––– 9.7 15 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.8 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.0 ––– Qgd Gate-to-Drain Charge ––– 3.4 ––– ID = 17A Qgodr ––– 2.5 ––– See Fig. 16 Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 4.4 ––– ––– 6.2 ––– IGSS gfs Qg e e VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V, TJ = 125°C VGS = -20V S VDS = 15V, ID = 17A VDS = 15V nC VGS = 4.5V Qoss Output Charge td(on) Turn-On Delay Time ––– 9.8 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 41 ––– ID = 17A td(off) Turn-Off Delay Time ––– 12 ––– tf Fall Time ––– 3.6 ––– Ciss Input Capacitance ––– 1210 ––– Coss Output Capacitance ––– 260 ––– Crss Reverse Transfer Capacitance ––– 130 ––– nC ns VDS = 16V, VGS = 0V e Clamped Inductive Load VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy c Typ. ––– d c Units mJ Max. 40 ––– 23 A ––– 5.7 mJ Diode Characteristics Parameter Min. Typ. Max. Units h IS Continuous Source Current ––– ––– 59 ISM (Body Diode) Pulsed Source Current ––– ––– 230 VSD (Body Diode) Diode Forward Voltage ––– ––– 1.0 trr Reverse Recovery Time ––– 14 21 ns Qrr Reverse Recovery Charge ––– 5.2 7.8 nC 2 c Conditions MOSFET symbol A V showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 17A, VGS = 0V S e TJ = 25°C, IF = 17A, VDD = 15V di/dt = 100A/µs e www.irf.com IRF3707ZCS/L 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V 100 3.0V 10 30µs PULSE WIDTH Tj = 25°C 1 0.1 1 BOTTOM 30V 10 30µs PULSE WIDTH Tj = 175°C 1 0.1 10 1 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V T J = 25°C T J = 175°C 100 VDS = 10V 30µs PULSE WIDTH 10.0 ID = 42A VGS = 10V 1.5 1.0 0.5 2 3 4 5 6 7 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF3707ZCS/L 100000 ID= 17A Ciss 1000 Coss Crss 100 5.0 VGS, Gate-to-Source Voltage (V) C oss = C ds + C gd 10000 C, Capacitance(pF) 6.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VDS= 24V VDS= 15V 4.0 3.0 2.0 1.0 0.0 10 1 10 100 0 VDS, Drain-to-Source Voltage (V) 2 4 6 8 10 12 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000.00 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) ISD, Reverse Drain Current (A) 100.00 100 T J = 175°C 10.00 T J = 25°C 1.00 0.10 VGS = 0V 0.01 0.0 0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2.0 100µsec 10 1msec 1 10msec Tc = 25°C Tj = 175°C Single Pulse 0.1 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF3707ZCS/L 60 Limited By Package 50 ID, Drain Current (A) VGS(th) Gate threshold Voltage (V) 2.5 40 30 20 10 2.0 ID = 250µA 1.5 1.0 0.5 0 25 50 75 100 125 150 -75 -50 -25 175 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 τJ 0.02 0.01 0.01 R1 R1 τJ τ1 τ1 R2 R2 τ2 τ2 Ci= τi/Ri Ci= τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 1.163 0.000257 1.073 0.001040 0.419 0.003089 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3707ZCS/L 15V + V - DD IAS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG VGS 20V DRIVER L VDS 175 ID 4.5A 6.8A BOTTOM 23A TOP 150 125 100 75 50 25 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current LD I AS VDS Fig 12b. Unclamped Inductive Waveforms + VDD D.U.T Current Regulator Same Type as D.U.T. VGS Pulse Width < 1µs Duty Factor < 0.1% 50KΩ 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS VDS 90% VGS 3mA IG ID Current Sampling Resistors Fig 13. Gate Charge Test Circuit 10% VGS td(on) tr td(off) tf Fig 14b. Switching Time Waveforms 6 www.irf.com IRF3707ZCS/L D.U.T Driver Gate Drive P.W. + ƒ + - - „ • • • • D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period *  RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ Period VDD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRF3707ZCS/L Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. The power loss equation for Q2 is approximated by; * Ploss = Pconduction + Pdrive + Poutput ( 2 Ploss = Irms × Rds(on) ) Power losses in the control switch Q1 are given by; + (Qg × Vg × f ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎠ ⎝ 2 This can be expanded and approximated by; *dissipated primarily in Q1. Ploss = (Irms × Rds(on ) ) 2 ⎛ ⎞ ⎛ Qgs 2 Qgd +⎜I× × Vin × f ⎟ + ⎜ I × × Vin × ig ig ⎝ ⎠ ⎝ ⎞ f⎟ ⎠ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Qoss Characteristic 8 www.irf.com IRF3707ZCS/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/