IRF40H210

StrongIRFET™ IRF40H210 HEXFET® Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters   VDSS RDS(on) typ. max 40V 1.4m 1.7m ID (Silicon Limited) 201A ID (Package Limited) 100A   Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant PQFN 5 x 6 mm Package Type IRF40H210 PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 ID = 100A IRF40H210 200 5 Limited by package 175 4 3 TJ = 125°C 2 150 125 100 75 50 1 TJ = 25°C 25 0 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 Orderable Part Number 225 6 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m) Base part number www.irf.com © 2015 International Rectifier 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback April 1, 2015 IRF40H210   Absolute Maximum Rating Symbol ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC(Bottom) = 25°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V(Wire Bond Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance   Symbol Parameter Junction-to-Case  RJC (Bottom) Junction-to-Case  RJC (Top) Junction-to-Ambient  RJA Junction-to-Ambient  RJA (