IRF40H233XTMA1

IRF40H233 MOSFET MOSFET-StrongIRFETª SSO8dual(TDSON-8-4) Benefits 8 •Optimizedforbroadestavailabilityfromdistributionpartners •175°Cjunctiontemperaturerated •100%UILtested •ProductvalidationaccordingtoJEDECstandard •Pb-Free;RoHSCompliant;Halogen-Free 1 7 6 1 Potentialapplications 8 2 3 4 2 5 7 6 3 4 5 •BrushedMotordriveapplications •BLDCMotordriveapplications •Batterypoweredcircuits •Half-bridgeandfull-bridgetopologies •Synchronousrectifierapplications •Resonantmodepowersupplies Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),typ 5.1 mΩ RDS(on),max 6.2 mΩ ID 65 A Type/OrderingCode Package IRF40H233 PG-TDSON-8-4 Final Data Sheet Marking H233 1 RelatedLinks - Rev.2.3,2020-06-29 MOSFET-StrongIRFETª IRF40H233 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.3,2020-06-29 MOSFET-StrongIRFETª IRF40H233 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 65 46 35 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C - 260 A TC=25°C - - 71 mJ ID=35A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 50 3.8 W TC=25°C TA=25°C,RTHJA=40°C/W4) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom5) Values Min. Typ. Max. RthJC - - 3 °C/W - Thermal resistance, junction - case, top RthJC - - 45 °C/W - Device on PCB, 6 cm² cooling area4) RthJA - - 40 °C/W - Device on PCB, RTHJA(2|ID|RDS(on)max;parameter:Tj Final Data Sheet 2 25 °C RDS(on)=f(VGS),ID=35A;parameter:Tj 7 Rev.2.3,2020-06-29 MOSFET-StrongIRFETª IRF40H233 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.4 4.0 3.5 3.0 500 µA 1.6 2.5 VGS(th)[V] RDS(on)(normalizedto25°C) 2.0 1.2 2.0 50 µA 1.5 0.8 1.0 0.4 0.5 0.0 -80 -40 0 40 80 120 160 0.0 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=35A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 102 IF[A] C[pF] Ciss 103 Coss 101 100 Crss 102 0 5 10 15 20 25 30 35 40 10-1 0.0 0.4 VDS[V] 1.2 1.6 2.0 2.4 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-06-29 MOSFET-StrongIRFETª IRF40H233 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 14 8V 20 V 32 V 12 25 °C 101 10 100 °C 8 VGS[V] IAV[A] 150 °C 6 100 4 2 10-1 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=35Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 45 44 43 VBR(DSS)[V] 42 41 40 39 38 37 36 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2020-06-29 MOSFET-StrongIRFETª IRF40H233 5PackageOutlines Figure1OutlinePG-TDSON-8-4,dimensionsinmm/inches Final Data Sheet 10 Rev.2.3,2020-06-29 MOSFET-StrongIRFETª IRF40H233 REEL DIMENSIONS TAPE DIMENSIONS DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimension are nominal Package Type Reel Diameter (Inch) QTY Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Figure2OutlinePG-TDSON-8-4,dimensionsinmm/inches Final Data Sheet 11 Rev.2.3,2020-06-29 MOSFET-StrongIRFETª IRF40H233 RevisionHistory IRF40H233 Revision:2020-06-29,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 1.0 2018-07-05 Release of preliminary version 2.0 2018-07-12 Release of final version 2.1 2018-07-16 Update Potential Application 2.2 2020-01-20 Update from IR MOSFT/StrongIRFETTM to StrongIRFETTM 2020-06-29 Updated Datasheet based on new current rating and application note:App-AN_1912_PL51_2001_180356 2.3 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.3,2020-06-29