IRF4905PBF

PD - 94816 IRF4905PbF Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  P-Channel  Fully Avalanche Rated  Lead-Free Description HEXFET® Power MOSFET  D VDSS = -55V RDS(on) = 0.02Ω G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw -74 -52 -260 200 1.3 ± 20 930 -38 20 -5.0 -55 to + 175 Units A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units ––– 0.50 ––– 0.75 ––– 62 °C/W 11/6/03 IRF4905PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. -55 ––– ––– -2.0 21 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.05 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 18 99 61 96 LD Internal Drain Inductance ––– 4.5 LS Internal Source Inductance ––– 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 3400 1400 640 V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.02 Ω VGS = -10V, ID = -38A  -4.0 V VDS = VGS, ID = -250µA ––– S VDS = -25V, ID = -38A -25 VDS = -55V, VGS = 0V µA -250 VDS = -44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 180 ID = -38A 32 nC VDS = -44V 86 VGS = -10V, See Fig. 6 and 13  ––– VDD = -28V ––– ID = -38A ns ––– RG = 2.5Ω ––– RD = 0.72Ω, See Fig. 10  Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -74 showing the A G integral reverse ––– ––– -260 p-n junction diode. S ––– ––– -1.6 V TJ = 25°C, IS = -38A, VGS = 0V  ––– 89 130 ns TJ = 25°C, IF = -38A ––– 230 350 nC di/dt = -100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:
Repetitive rating; pulse width limited by  ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS,  Starting TJ = 25°C, L = 1.3mH  Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) RG = 25Ω, IAS = -38A. (See Figure 12) TJ ≤ 175°C IRF4905PbF 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) 100 10 -4.5V 20µs PULSE WIDTH Tc = 25°C A 1 0.1 1 10 100 100 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) TJ = 25°C 100 TJ = 175°C 10 VDS = -25V 20µs PULSE WIDTH 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 A 100 Fig 2. Typical Output Characteristics 2.0 6 1 -VDS , Drain-to-Source Voltage (V) 1000 5 20µs PULSE WIDTH TC = 175°C 1 0.1 Fig 1. Typical Output Characteristics 1 -4.5V 10 -VDS , Drain-to-Source Voltage (V) 4 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP TOP 10 A I D = -64A 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRF4905PbF 7000 5000 -V GS , Gate-to-Source Voltage (V) 6000 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 4000 Coss 3000 2000 Crss 1000 0 1 10 100 I D = -38A VDS = -44V VDS = -28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 -VDS , Drain-to-Source Voltage (V) 80 120 160 A 200 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -I D , Drain Current (A) -ISD , Reverse Drain Current (A) 40 100 TJ = 175°C TJ = 25°C 10 VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.8 100 100µs 1ms 10 10ms TC = 25°C TJ = 175°C Single Pulse 1 1 10 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area A 100 IRF4905PbF 80 RD VDS ID , Drain Current (A) VGS 60 D.U.T. RG - + V DD -10V 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 20 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 175 10% TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 PDM 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 L VDS D.U.T RG IAS -20V tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit E AS , Single Pulse Avalanche Energy (mJ) IRF4905PbF 2500 TOP BOTTOM 2000 1500 1000 500 A 0 25 I AS ID -16A -27A -38A 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V -10V QGS .2µF .3µF QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit IRF4905PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T*
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer +  - -  +  RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS [ ISD ] IRF4905PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED O N WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/