PD - 96029A
IRF5800PbF
HEXFET® Power MOSFET
l
l
l
l
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Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
A
D
D
1
6
D
2
5
D
G
3
4
S
Description
VDSS = -30V
RDS(on) = 0.085Ω
Top View
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-4.0
-3.2
-32
2.0
1.3
0.016
20.6
± 20
-55 to + 150
V
W/°C
mJ
V
°C
Max.
Units
62.5
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
04/20/10
IRF5800PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
–––
–––
–––
–––
–––
–––
–––
–––
11.4
2.3
2.2
11.4
11
24
14
535
94
68
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = 1mA
0.085
VGS = -10V, ID = -4.0A
Ω
0.150
VGS = -4.5V, ID = -3.0A
–––
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -4.0A
-1.0
VDS = -24V, VGS = 0V
µA
-5.0
VDS = -24V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
17
ID = -4.0A
–––
nC
VDS = -16V
–––
VGS = -10V
17
VDD = -15V, VGS = -10V
17
ID = -1.0A
ns
36
RG = 6.0Ω
20
RD = 15Ω,
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-2.0
-32
–––
–––
–––
–––
19
16
-1.2
28
24
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
Surface mounted on FR-4 board, t ≤ 5sec.
Starting TJ = 25°C, L = 2.5mH
RG = 25Ω, IAS = -4.0A. (See Fig 10 )
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IRF5800PbF
100
100
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
10
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
1
-2.70V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
10
1
-2.70V
0.1
0.01
0.1
Fig 1. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
1
V DS = -15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
0.1
2.0
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
20µs PULSE WIDTH
TJ = 150 °C
8.0
ID = -4.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5800PbF
800
-VGS , Gate-to-Source Voltage (V)
600
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
400
200
Coss
Crss
0
1
10
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
-VDS , Drain-to-Source Voltage (V)
8
12
16
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
4
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.8
1.2
1.6
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS =-16V
16
0
100
ID = -4.0A
2.0
100
10us
10
100us
1ms
1
0.1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5800PbF
EAS , Single Pulse Avalanche Energy (mJ)
-ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
TC , Case Temperature
125
150
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
50
ID
-1.8A
-2.5A
BOTTOM -4.0A
TOP
40
30
20
10
0
25
50
75
100
125
Starting TJ, Junction Temperature ( °C)
150
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance ( Ω)
IRF5800PbF
0.20
0.16
0.12
ID = -4.0A
0.08
0.04
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
6
16.0
0.25
0.20
VGS = -4.5V
0.15
0.10
0.05
VGS = -10V
0.00
0
5
10
15
20
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
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IRF5800PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF5800PbF
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2010
8
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