IRF5810TRPBF

IRF5801PbF-1 HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 200 V 2.20 Ω 3.9 0.6 D 1 6 D nC D 2 5 D A G 3 4 S TSOP-6 Features Industry-standard pinout TSOP-6 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRF5801TRPbF-1 TSOP-6 ⇒ Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRF5801TRPbF-1 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 0.6 0.48 4.8 2.0 0.016 ± 30 9.6 -55 to + 150 A W W/°C V V/ns °C 300 (1.6mm from case ) Thermal Resistance Symbol RθJA Parameter Junction-to-Ambient „ Typ. Max. Units ––– 62.5 °C/W Notes  through † are on page 8 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 15, 2014 IRF5801PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.26 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA ƒ 2.2 Ω VGS = 10V, ID = 0.36A ƒ 5.5 V VDS = VGS, ID = 250μA 25 VDS = 200V, VGS = 0V μA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units Conditions 0.44 ––– ––– S VDS = 50V, ID = 0.36A ––– 3.9 ––– ID = 0.36A ––– 0.8 ––– nC VDS = 160V ––– 2.2 ––– VGS = 10V ––– 6.5 ––– VDD = 100V ––– 8.0 ––– ID = 0.36A ns ––– 8.8 ––– RG = 53Ω ––– 19 ––– VGS = 10V ƒ ––– 88 ––– VGS = 0V ––– 18 ––– VDS = 25V ––– 6.3 ––– pF ƒ = 1.0MHz ––– 102 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– 8.4 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– 26 ––– VGS = 0V, VDS = 0V to 160V … Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 9.9 0.6 mJ A Diode Characteristics IS ISM VSD trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge www.irf.com © 2014 International Rectifier Min. Typ. Max. Units ––– ––– 1.8 ––– ––– 4.8 ––– ––– ––– ––– 45 54 1.3 ––– ––– A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 0.36A, VGS = 0V TJ = 25°C, IF = 0.36A di/dt = 100A/μs ƒ Submit Datasheet Feedback D S ƒ July 15, 2014 IRF5801PbF-1 1 10 VGS TOP 15.0V 12.0V 10.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V VGS 15.0V 12.0V 10.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 6.0V 0.1 1 6.0V 0.1 20μs PULSE WIDTH Tj = 150°C 20μs PULSE WIDTH Tj = 25°C 0.01 0.01 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150° C 1 TJ = 25 ° C V DS = 50V 20μs PULSE WIDTH 7 8 9 10 11 12 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 100 Fig 2. Typical Output Characteristics 10 6 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 1 www.irf.com © 2014 International Rectifier 3.0 ID = 0.6A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback July 15, 2014 IRF5801PbF-1 V GS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 120 Coss = Cds + Cgd Ciss 80 Coss 40 Crss 20 VGS , Gate-to-Source Voltage (V) 160 10 100 V DS= 160V V DS= 100V V DS= 40V 16 12 8 4 0 1 ID = 0.36A 0 1000 0 1 2 3 4 5 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.4 4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 10 10us 1 1ms 0.1 0.01 1.0 100us 10ms TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 15, 2014 1000 IRF5801PbF-1 0.6 VDS VGS ID , Drain Current (A) 0.5 RD D.U.T. RG + -V DD 0.4 10V 0.3 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.2 Fig 10a. Switching Time Test Circuit VDS 0.1 90% 0.0 25 50 75 100 125 TC , Case Temperature ( °C) 150 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.1 0.00001 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D =t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 15, 2014 100 IRF5801PbF-1 2.500 ( RDS(on), Drain-to -Source On ResistanceΩ) RDS ( on ) , Drain-to-Source On Resistance Ω ( ) 12.000 10.000 2.250 8.000 VGS = 10V 2.000 6.000 4.000 ID = 0.6A 1.750 2.000 1.500 0.000 0 1 2 3 4 6.0 5 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 VGS, Gate -to -Source Voltage (V) ID , Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS QGS .3μF D.U.T. + V - DS QGD EAS , Single Pulse Avalanche Energy (mJ) 50KΩ .2μF 12V VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS DRIVER D.U.T RG IAS 20V I AS tp + V - DD ID 0.4A 0.7A BOTTOM 0.9A TOP 20 15 10 5 0 25 50 75 100 125 www.irf.com © 2014 International Rectifier 150 Starting T J, Junction Temperature ( ° C) 0.01Ω Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 A 25 Fig 15c. Maximum Avalanche Energy Vs. Drain Current Submit Datasheet Feedback July 15, 2014 IRF5801PbF-1 TSOP-6 Package Outline TSOP-6 Part Marking Information Y = YEAR W = WEEK PART NUMBER YEAR T OP LOT CODE PART NUMBER CODE REFERENCE: A = S I3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 F = IRF5801 G = IRF5803 H = IRF5804 I = IRF5805 J = IRF5806 K = IRF5810 N = IRF5802 DATE CODE MARKING INSTRUCTIONS WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR O= P= R= S= IRLT S 6342T RPBF IRFTS 8342T RPBF IRFTS 9342T RPBF Not applicable T = IRLT S 2242T RPBF Note: A line above the work week (as s hown here) indicates Lead-Free. 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z WW = (27-52) IF PRECEDED BY A LETTER YEAR 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 15, 2014 IRF5801PbF-1 TSOP-6 Tape & Reel Information 8mm FEED DIRECTION 4mm NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 27mH, RG = 25Ω, IAS = 0.36A. ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board, t < 10sec. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . † ISD ≤ 0.36A, di/dt ≤ 93A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. † Qualification information Qualification level Moisture Sensitivity Level Industrial (per JE DEC JE S D47F TSOP-6 RoHS compliant †† guidelines) MS L1 †† (per JE DE C J-S TD-020D ) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 15, 2014