IRF5850TRPBF

PD - 95506B IRF5850PbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS = -20V RDS(on) = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5850 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -20 -2.2 -1.8 -9.0 0.96 0.62 7.7 ± 12 -55 to + 150 V mW/°C V °C Max. Units 130 °C/W A W Thermal Resistance Parameter RθJA www.irf.com Maximum Junction-to-Ambientƒ 1 04/17/12 IRF5850PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ΔV(BR)DSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 ––– ––– ––– -0.45 3.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.011 ––– ––– ––– ––– ––– ––– ––– ––– 3.6 0.66 0.83 8.3 14 31 28 320 56 40 Max. Units Conditions ––– V VGS = 0V, ID = -250μA ––– V/°C Reference to 25°C, I D = -1mA 0.135 VGS = -4.5V, ID = -2.2A ‚ Ω 0.220 VGS = -2.5V, ID = -1.9A ‚ -1.2 V VDS = VGS, ID = -250μA ––– S VDS = -10V, ID = -2.2A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, TJ = 125°C -100 VGS = -12V nA 100 VGS = 12V 5.4 ID = -2.2A ––– nC VDS = -10V ––– VGS = -4.5V ‚ ––– VDD = -10V ‚ ––– ID = -1.0A ns ––– R G = 6.0Ω ––– VGS = -4.5V ––– VGS = 0V ––– pF VDS = -15V ––– ƒ = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– -0.96 ––– ––– -9.0 ––– ––– ––– ––– 23 7.7 -1.2 35 12 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -0.96A, VGS = 0V TJ = 25°C, IF = -0.96A di/dt = -100A/μs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t ≤ 5sec. ‚ Pulse width ≤ 400μs; duty cycle ≤ 2%. 2 www.irf.com IRF5850PbF 100 100 VGS -7.0V -5.0V -4.5V -2.5V -2.0V -1.8V -1.5V BOTTOM -1.2V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 1 -1.2V 0.1 20μs PULSE WIDTH TJ = 25 ° C 0.01 0.1 1 10 10 1 -1.2V 0.1 0.1 100 -VDS , Drain-to-Source Voltage (V) TJ = 150 ° C 1 V DS = -15V 20μs PULSE WIDTH 2.4 2.8 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C 2.0 1 10 100 Fig 2. Typical Output Characteristics 10 1.6 20μs PULSE WIDTH TJ = 150 °C -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 1.2 VGS -7.0V -5.0V -4.5V -2.5V -2.0V -1.8V -1.5V BOTTOM -1.2V TOP TOP ID = -2.2A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5850PbF 500 10 400 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) Ciss 300 200 Coss 100 Crss 0 1 10 6 4 2 0 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 6 8 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 2 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.4 0.8 1.0 100us 1ms 1 TA = 25 ° C TJ = 150 ° C Single Pulse V GS = 0 V 0.6 10 10ms 1.2 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS =-16V VDS =-10V 8 0 100 ID = -2.2A 1.4 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5850PbF 2.5 RD V DS VGS -ID , Drain Current (A) 2.0 D.U.T. RG - + VDD 1.5 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit 0.5 td(on) 0.0 tr t d(off) tf VGS 25 50 75 100 125 10% 150 TJ , Junction Temperature (°C) 90% Fig 9. Maximum Drain Current Vs. Junction Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.24 RDS (on) , Drain-to-Source On Resistance (Ω) RDS(on) , Drain-to -Source On Resistance (Ω) IRF5850PbF 0.20 0.16 ID = -2.2A 0.12 0.08 2.0 3.0 4.0 5.0 6.0 7.0 0.40 0.30 VGS = -2.5V 0.20 VGS = -4.5V 0.10 0 2 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage 4 6 8 10 -I D , Drain Current (A) Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG QGS .2μF .3μF QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF5850PbF 24 1.0 16 0.8 ID = -250μA Power (W) -VGS(th) , Variace ( V ) 20 12 8 0.6 4 0 0.4 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com 0.001 0.010 0.100 1.000 10.000 Time (sec) Fig 15. Typical Power Vs. Time 7 IRF5850PbF TSOP-6 Package Outline TSOP-6 Part Marking Information W = (1-26) IF PRECEDE D BY LAS T DIGIT OF CALE NDAR YEAR DATE CODE Y = YEAR W = WE EK PART NUMBER CU-WIRE INDICATOR TOP LOT CODE YE AR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 PART NUMBER CODE REFERENCE : A = SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 F = IRF5801 I = IRF 5805 J = IRF5806 K = IRF 5810 L = IRF 5804 M = IRF5803 N = IRF5802 Notes: -A line above the work week (as shown here) indicates Lead-Free -A line below the part number (as shown here) indicates Cu-wire WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRE CEDED BY A LET TER YE AR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRF5850PbF TSOP-6 Tape & Reel Information Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 101N,Sepulveda blvd El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2012 www.irf.com 9