PD - 97500A
IRF6201PbF
VDS
20
V
2.45
mΩ
2.75
mΩ
Qg (typical)
130
nC
ID
27
A
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
(@TA = 25°C)
HEXFET® Power MOSFET
6
'
6
'
6
'
*
'
SO-8
Applications
• OR-ing or hot-swap MOSFET
• Battery operated DC motor inverter MOSFET
• System/Load switch
Features and Benefits
Features
Low RDSon (≤ 2.45mΩ @ Vgs = 4.5V)
Industry-standard SO-8 package
RoHS compliant containing no lead, no bromide and no halogen
Orderable part number
Package Type
IRF6201PbF
IRF6201TRPbF
SO8
SO8
Benefits
Lower conduction losses
results in
Multi-vendor compatibility
⇒
Environmentally Friendly
Standard Pack
Form
Quantity
Tube/Bulk
95
4000
Tape and Reel
Note
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
20
VGS
Gate-to-Source Voltage
±12
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
27
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
22
IDM
Pulsed Drain Current
110
e
e
c
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
TJ
Power Dissipation
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
www.irf.com
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
11/11/2010
IRF6201PbF
Static @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
BVDSS
Drain-to-Source Breakdown Voltage
Parameter
20
–––
–––
V
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
–––
–––
4.6
1.90
–––
2.45
–––
2.10
2.75
1.1
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
0.5
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
Gate-to-Source Forward Leakage
–––
–––
–––
–––
150
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Qg
Qgs
Total Gate Charge
Gate-to-Source Charge
–––
–––
130
16
195
–––
Qgd
td(on)
Gate-to-Drain Charge
Turn-On Delay Time
–––
–––
60
29
–––
–––
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
100
320
–––
–––
tf
Fall Time
–––
265
–––
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
8555
1735
–––
–––
Crss
Reverse Transfer Capacitance
–––
1290
–––
Min.
Typ.
Max.
IGSS
Conditions
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 27A
mΩ
VGS = 2.5V, ID = 22A
d
d
V
µA
nA
nC
VDS = VGS, ID = 100µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
VGS = 4.5V
VDS = 10V
ID = 22A
VDD = 20V, VGS = 4.5V
ns
pF
ID = 1.0A
RG = 6.8Ω
See Figs. 10a & 10b
VGS = 0V
VDS = 16V
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
–––
–––
2.5
ISM
Pulsed Source Current
(Body Diode)
–––
–––
110
c
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 2.5A, VGS = 0V
trr
Reverse Recovery Time
–––
82
120
ns
TJ = 25°C, IF = 2.5A, VDD = 16V
Qrr
Reverse Recovery Charge
–––
180
270
nC
di/dt = 100/µs
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead f
Junction-to-Ambient e
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ approximately 90°C.
2
d
d
Typ.
Max.
Units
–––
–––
20
50
°C/W
IRF6201PbF
1000
1000
100
BOTTOM
TOP
100
10
≤60µs PULSE WIDTH
1
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
Tj = 25°C
BOTTOM
10
1.3V
≤60µs PULSE WIDTH
1.3V
Tj = 150°C
1
0.1
0.1
1
10
0.1
100
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
100
T J = 25°C
10
TJ = 150°C
1
VDS = 10V
≤60µs PULSE WIDTH
0.1
ID = 27A
1.4
VGS = 4.5V
1.2
1.0
0.8
0.6
0
1
2
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
IRF6201PbF
100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
ID= 22A
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
C oss = C ds + C gd
Ciss
10000
12.0
Coss
Crss
VDS= 16V
VDS= 10V
10.0
8.0
6.0
4.0
2.0
1000
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
10
1000
T J = 150°C
TJ = 25°C
200
250
300
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
1msec
10msec
10
DC
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
1.0
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
150
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
50
0
0.1
1
10
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRF6201PbF
30
RD
V DS
V GS
ID, Drain Current (A)
25
D.U.T.
RG
+
-V DD
20
10V
15
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
0
25
50
75
100
125
VDS
150
90%
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
1000
5
ID = 27A
4
3
T J = 125°C
2
T J = 25°C
1
1
2
3
4
5
6
7
8
9
10 11 12
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRF6201PbF
3.0
Vgs = 2.5V
2.5
Vgs = 4.5V
2.0
1.5
1.0
0
50
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate
Voltage
100
150
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain
Current
Current Regulator
Same Type as D.U.T.
QG
VGS
50KΩ
QGS
QGD
12V
.2µF
.3µF
D.U.T.
VG
+
V
- DS
VGS
Charge
3mA
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
200
IRF6201PbF
90000
80000
1.0
70000
0.8
60000
Power (W)
VGS(th) , Gate threshold Voltage (V)
1.2
ID = 100µA
0.6
0.4
50000
40000
30000
20000
0.2
10000
0.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage vs.
Junction Temperature
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0
1E-08
1E-07
1E-06
1E-05
1E-04
Time (sec)
Fig 16. Typical Power vs. Time
1E-03
IRF6201PbF
SO-8 Package Outline (Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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